Abstract: A semiconductor switching device according to the invention has a semiconductor crystal comprising sequentially alternate layers of opposite conductivity type. The device comprises two emitters of different conductivity type, at least one gate base, another base of opposite conductivity type with respect to the first base adjacent to the gate base, and an additional region of conductivity type opposite to the gate base which is adjacent to the surface of the gate base and arranged completely or partially in the gate base. At a point where the additional region extends onto the surface, there is provided a recess the bottom area of which exceeds that of the exposed part of the additional area, so that this part is disposed within the bottom area of the recess without contacting the lateral walls of the recess.