Abstract: A controller includes an interface and storage circuitry. The interface communicates with a memory that includes memory cells that store data in multiple programming levels, and that are organized in Word Lines (WLs). Each WL connects to one or more cell-groups of the memory cells. The memory cells in some cell-groups suffer from an impairment that has a different severity for reading data units of different bit-significance values. The storage circuitry assigns multiple parity groups to data units stored in cell-groups belonging to consecutive WLs, so that a same parity group is assigned to data units of different bit-significance values in neighboring groups of Nwl consecutive WLs. Upon detecting a failure to access a data unit of a given parity group, due to the impairment, the storage circuitry recovers the data unit using other data units assigned to the given parity group, and that are stored in other cell-groups.

Abstract: A storage device includes circuitry and memory cells that store data in Np programming levels of threshold voltage values. The circuitry defines NRv threshold-sets, each includes Ns read thresholds that define Ns+1 zones, produces Ns readouts by reading, from a target WL, using the NS read thresholds, a target page that was stored encoded using an Error Correction Code (ECC), and produces a reference readout by reading the target page using optimal read thresholds. The circuitry identifies Np programming levels of memory cells in a neighbor WL for classifying target cells in the target WL into Np·NRv cell-groups. The circuitry calculates, per zone, Np LLR values, for the respective Np programming levels, based on the reference readout, the Ns readouts and the classification, assigns the LLR values to the target cells, and recovers the target page by applying to the assigned LLR values soft decoding for decoding the ECC.

Abstract: A controller includes an interface and storage circuitry. The interface communicates with a memory that includes memory cells that store data in multiple programming levels, and that are organized in Word Lines (WLs). Each WL connects to one or more cell-groups of the memory cells. The memory cells in some cell-groups suffer from an impairment that has a different severity for reading data units of different bit-significance values. The storage circuitry assigns multiple parity groups to data units stored in cell-groups belonging to consecutive WLs, so that a same parity group is assigned to data units of different bit-significance values in neighboring groups of Nwl consecutive WLs. Upon detecting a failure to access a data unit of a given parity group, due to the impairment, the storage circuitry recovers the data unit using other data units assigned to the given parity group, and that are stored in other cell-groups.

Abstract: The subject technology receives an input data set including rows of values for features of the input data set, each row including a different combination of values for the features. The subject technology classifies one or more rows of values as an anomaly based on anomaly scores determined for each of the rows of values. The subject technology determines a subset of the different features that affect the anomaly scores of the one or more rows classified as the anomaly. The subject technology determines a root cause for at least one of the rows classified as the anomaly based on values of the subset of the different features for the at least one of the rows. The subject technology provides an indication of the root cause to a device to enable the device to perform an action when encountering conditions corresponding to the root cause at a subsequent time.

Abstract: A memory controller includes an interface and circuitry. The interface is configured to communicate with a memory device, which includes multiple memory cells, and which applies refreshing to the memory cells by repeatedly inverting data stored in the memory cells. The circuitry is configured to store input data in a group of the memory cells, to read the stored input data from the group of the memory cells to produce read data, the read data has an actual polarity that is either un-inverted or inverted due to the refreshing of the memory cells in the group, to analyze the read data for identifying the actual polarity of the read data, and to recover the input data from the read data based on the identified actual polarity.

Abstract: A storage apparatus includes a plurality of memory cells and storage circuitry. The storage circuitry is configured to store a mapping that maps sets of readout bit-flip counts to respective predefined impairment profiles. The impairment profiles specify two or more severity levels of respective impairment types, including read disturb, retention and endurance. Each of the bit-flip counts includes a one-to-zero error count or a zero-to-one error count. The storage circuitry is configured to read data from a group of the memory cells using given readout parameters, to evaluate an actual set of bit-flip counts corresponding to the read data, to classify the group of the memory cells to a respective impairment profile by mapping the actual set of the bit-flip counts using the mapping, and to adapt the readout parameters based on the impairment profile to which the group of the memory cells was classified.

Abstract: A storage system includes an interface and storage circuitry. The interface is configured to communicate with a plurality of memory cells coupled to multiple Bit Lines (BLs). The memory cells are programmed and read in sub-groups of multiple BLs, and the sub-groups correspond to respective addresses. The storage circuitry is configured to generate a sequence of addresses for reading memory cells that together store a data part and a pattern part containing a predefined pattern, via multiple respective sub-groups, to detect that the data part read from the memory cells is erroneous due to a fault that occurred in the sequence of addresses by identifying a mismatch between the pattern part read from the memory cells and the predefined pattern, and, in response to detecting the fault, to take a corrective measure to recover an error-free version of the data part.

Abstract: An apparatus includes an interface and storage circuitry. The interface is configured to communicate with a memory that includes multiple memory cells arranged in multiple planes that each includes one or more blocks of the memory cells. The storage circuitry is configured to apply a multi-plane storage operation to multiple blocks simultaneously across the respective planes. In response to detecting that the multi-plane storage operation has failed, the storage circuitry is configured to apply a single-plane storage operation to one or more of the blocks that were accessed in the multi-plane storage operation, including a given block, and to identify the given block as a bad block if the single-plane operation applied to the given block fails. The storage circuitry is further configured to store data in the blocks that were accessed in the multi-plane operation but were not identified as bad blocks.

Abstract: A storage system includes an interface and storage circuitry. The interface is configured to communicate with a plurality of memory cells coupled to multiple Bit Lines (BLs). The memory cells are programmed and read in sub-groups of multiple BLs, and the sub-groups correspond to respective addresses. The storage circuitry is configured to generate a sequence of addresses for reading memory cells that together store a data part and a pattern part containing a predefined pattern, via multiple respective sub-groups, to detect that the data part read from the memory cells is erroneous due to a fault that occurred in the sequence of addresses by identifying a mismatch between the pattern part read from the memory cells and the predefined pattern, and, in response to detecting the fault, to take a corrective measure to recover an error-free version of the data part.

Abstract: A method for data storage includes preparing first data having a first size for storage in a memory device that stores data having a nominal size larger than the first size, by programming a group of memory cells to multiple predefined levels using a one-pass program-and-verify scheme. The first data is combined with dummy data to produce first combined data having the nominal size, and is sent to the memory device for storage in the group. The dummy data is chosen to limit the levels to which the memory cells in the group are programmed to a partial subset of the predefined levels. In response to identifying second data to be stored in the group, the second data is combined with the first data to obtain second combined data having the nominal size, and is sent to the memory device for storage, in place, in the group.

Abstract: A memory system includes an interface and storage circuitry. The interface is configured to communicate with a plurality of memory cells that store data by setting the memory cells to analog voltages representative of respective storage values. The storage circuitry is configured to receive data for storage, to measure a temperature at a time of programming the received data, and, to program the received data to the memory cells using a first programming scheme when the measured temperature falls within a predefined normal temperature range, and otherwise to program the received data to the memory cells using a second programming scheme having a lower net storage utilization than the first programming scheme.

Abstract: A memory system includes an interface and storage circuitry. The interface is configured to communicate with a plurality of memory cells that store data by setting the memory cells to analog voltages representative of respective storage values. The storage circuitry is configured to receive data for storage, to measure a temperature at a time of programming the received data, and, to program the received data to the memory cells using a first programming scheme when the measured temperature falls within a predefined normal temperature range, and otherwise to program the received data to the memory cells using a second programming scheme having a lower net storage utilization than the first programming scheme.

Abstract: A method for data storage includes receiving in a memory device data for storage in a group of memory cells. The data is stored in the group by performing a Program and Verify (P&V) process, which applies to the memory cells in the group a sequence of programming pulses and compares respective analog values of the memory cells in the group to respective verification thresholds. Immediately following successful completion of the P&V process, a mismatch between the stored data and the received data is detected in the memory device. An error in storage of the data is reported responsively to the mismatch.

Abstract: A method includes storing data encoded with an Error Correction Code (ECC) in analog memory cells, by buffering the data in a volatile buffer and then writing the buffered data to the analog memory cells while overwriting at least some of the data in the volatile buffer with success indications. Upon detecting a failure in writing the buffered data to the analog memory cells, recovered data is produced by reading both the volatile buffer and the analog memory cells, assigning reliability metrics to respective bits of the recovered data depending on whether the bits were read from the volatile buffer or from the analog memory cells, and applying ECC decoding to the recovered data using the reliability metrics. The recovered data is re-programmed.

Abstract: An apparatus includes an interface and storage circuitry. The interface is configured to communicate with a memory that includes multiple memory cells arranged in multiple planes that each includes one or more blocks of the memory cells. The storage circuitry is configured to apply a multi-plane storage operation to multiple blocks simultaneously across the respective planes. In response to detecting that the multi-plane storage operation has failed, the storage circuitry is configured to apply a single-plane storage operation to one or more of the blocks that were accessed in the multi-plane storage operation, including a given block, and to identify the given block as a bad block if the single-plane operation applied to the given block fails. The storage circuitry is further configured to store data in the blocks that were accessed in the multi-plane operation but were not identified as bad blocks.

Abstract: A storage apparatus includes a plurality of memory cells and storage circuitry. The storage circuitry is configured to store a mapping that maps sets of readout bit-flip counts to respective predefined impairment profiles. The impairment profiles specify two or more severity levels of respective impairment types, including read disturb, retention and endurance. Each of the bit-flip counts includes a one-to-zero error count or a zero-to-one error count. The storage circuitry is configured to read data from a group of the memory cells using given readout parameters, to evaluate an actual set of bit-flip counts corresponding to the read data, to classify the group of the memory cells to a respective impairment profile by mapping the actual set of the bit-flip counts using the mapping, and to adapt the readout parameters based on the impairment profile to which the group of the memory cells was classified.

Abstract: A memory controller includes an interface and circuitry. The interface is configured to communicate with a memory device, which includes multiple memory cells, and which applies refreshing to the memory cells by repeatedly inverting data stored in the memory cells. The circuitry is configured to store input data in a group of the memory cells, to read the stored input data from the group of the memory cells to produce read data, the read data has an actual polarity that is either un-inverted or inverted due to the refreshing of the memory cells in the group, to analyze the read data for identifying the actual polarity of the read data, and to recover the input data from the read data based on the identified actual polarity.

Abstract: A method for data storage includes preparing first data having a first size for storage in a memory device that stores data having a nominal size larger than the first size, by programming a group of memory cells to multiple predefined levels using a one-pass program-and-verify scheme. The first data is combined with dummy data to produce first combined data having the nominal size, and is sent to the memory device for storage in the group. The dummy data is chosen to limit the levels to which the memory cells in the group are programmed to a partial subset of the predefined levels. In response to identifying second data to be stored in the group, the second data is combined with the first data to obtain second combined data having the nominal size, and is sent to the memory device for storage, in place, in the group.

Abstract: A storage apparatus includes a plurality of memory cells and storage circuitry. The storage circuitry is configured to store a mapping that maps sets of readout bit-flip counts to respective predefined impairment profiles. The impairment profiles specify two or more severity levels of respective impairment types, including read disturb, retention and endurance. Each of the bit-flip counts includes a one-to-zero error count or a zero-to-one error count. The storage circuitry is configured to read data from a group of the memory cells using given readout parameters, to evaluate an actual set of bit-flip counts corresponding to the read data, to classify the group of the memory cells to a respective impairment profile by mapping the actual set of the bit-flip counts using the mapping, and to adapt the readout parameters based on the impairment profile to which the group of the memory cells was classified.

Abstract: A method for data storage includes defining an end-to-end mapping between data bits to be stored in a memory device that includes multiple memory cells and predefined programming levels. The data bits are mapped into mapped bits, so that the number of the mapped bits is smaller than the number of the data bits. The data bits are stored in the memory device by programming the mapped bits in the memory cells using a programming scheme that guarantees the end-to-end mapping. After storing the data bits, the data bits are read from the memory device in accordance with the end-to-end mapping.