Abstract: A method of depositing a metal or other desired material onto a substrate using a gas generated via the sublimation of solid material precursors, wherein a sold precursor is introduced into a liquid in a bubbler apparatus so that the bubbler then contains vapors of solid precursor, and then sweeping a carrier gas through the bubbler to a reactor containing a substrate which is coated with the precursor via chemical vapor deposition.

Abstract: Generally, method of the present invention is an improved delivery system for gases generated via the sublimation of solid material precursors comprising: first, introducing a solid precursor into a liquid bubbler apparatus; adding a liquid to the solid precursor containing bubbler apparatus; the liquid in question is chosen to have a vapor pressure which is negligible compared with the vapor pressure of the solid precursor under the operating conditions extant in the bubbler. The liquid is also chosen such that the solid precursor exhibits limited solubility in said liquid, said solubility being less than about 100 ppm; attaching said bubbler containing said solid precursor and said liquid to reactor apparatus containing a substrate to which the precursor is to be applied. The bubbler contains vapors of solid precursor.

Abstract: A method of producing a smooth surface for a film of refractory metallic material is realized by placing a substrate in a CVD reactor; initiating deposition of a layer of two phase material via concurrent introduction into the CVD reactor of a precursor gas and molecular oxygen, the latter at a pressure between about 1.times.10.sup.-6 and 1.times.10.sup.-4 ; and annealing the treated layer at the deposition temperature.