Patents by Inventor Fabien Cheynis

Fabien Cheynis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8697548
    Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: April 15, 2014
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, Centre National de la Recherche Scientifique
    Inventors: Lukasz Borowik, Jean-Charles Barbe, Ezra Bussmann, Fabien Cheynis, Frédéric Leroy, Denis Mariolle, Pierre Müller
  • Patent number: 8647957
    Abstract: A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: February 11, 2014
    Assignees: Commissariat à l'énergie atomique et aux énergies alternatives, Centre National de la Recherche Scientifique
    Inventors: Lukasz Borowik, Jean-Charles Barbe, Ezra Bussmann, Fabien Cheynis, Frederic Leroy, Denis Mariolle, Pierre Muller
  • Publication number: 20120282759
    Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.
    Type: Application
    Filed: May 4, 2012
    Publication date: November 8, 2012
    Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Lukasz BOROWIK, Jean-Charles BARBE, Ezra BUSSMANN, Fabien CHEYNIS, Frédéric LEROY, Denis MARIOLLE, Pierre Müller
  • Publication number: 20120282758
    Abstract: A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.
    Type: Application
    Filed: May 4, 2012
    Publication date: November 8, 2012
    Applicants: Centre National De La Recherche Scientifique, Commissariat a L'Energie Atomique Et Aux Ene Alt
    Inventors: Lukasz BOROWIK, Jean-Charles Barbe, Ezra Bussmann, Fabien Cheynis, Frédéric Leroy, Denis Mariolle, Pierre Müller