Abstract: A method of operating a flyback converter is provided. The flyback converter comprises a transformer having a primary side winding and a secondary side winding, a primary switch at the primary side of the transformer and a secondary switch at the secondary side of the transformer, and a control unit. At the end of a switching cycle, before turning on the primary side switch: the control unit generates a Zero Voltage Switching (ZVS) pulse in the secondary side winding, such that the parasitic capacitor of the primary side switch is discharged. Consequently, the primary side switch is turned on in ZVS or near ZVS conditions.

Abstract: A wrapping unit (1) for a packaging line (2) comprises a conveyor (6) for feeding a succession of products (3) in a first direction (7) and a wrapping station (9) arranged along the conveyor (6) for wrapping a film (5) of wrapping material around said products (3), said wrapping station (9) comprising a wrapping device (13) provided with a plurality of wrapping members (15), each of said wrapping members (15) extending in a second direction (11) perpendicular to said first direction (7), said wrapping unit (1) further comprising a stability control group (12) for preventing said products (3) from tipping along said conveyor (6), said stability control group (12) comprising a plurality of anti-tip devices (33), each of said anti-tip devices (33) being associated, during operation, with a respective product (3) to move together with said respective product (3) through said wrapping station (9).

Abstract: A wrapping unit (1) for a packaging line (2) comprises a conveyor (6) for feeding a succession of products (3) in a first direction (7) and a wrapping station (9) arranged along the conveyor (6) for wrapping a film (5) of wrapping material around said products (3), said wrapping station (9) comprising a wrapping device (13) provided with a plurality of wrapping members (15), each of said wrapping members (15) extending in a second direction (11) perpendicular to said first direction (7), said wrapping unit (1) further comprising a stability control group (12) for preventing said products (3) from tipping along said conveyor (6), said stability control group (12) comprising a plurality of anti-tip devices (33), each of said anti-tip devices (33) being associated, during operation, with a respective product (3) to move together with said respective product (3) through said wrapping station (9).

Abstract: A method for protecting a circuit component on a semiconductor substrate from a plasma etching or other removal process includes forming a screening layer over an auxiliary layer to conceal at least an area of the auxiliary layer that overlays at least a portion of the circuit component, such as for example a high-ohmic poly resistor. The method transfers a pattern defined by a mask onto the screening layer by selectively removing portions of the screening layer in accordance with the pattern. Portions of the auxiliary layer that are not protected by the screening layer are removed using a plasma gas selective to the auxiliary layer material, without removing the area of the auxiliary layer that overlays the portion of the circuit component, thereby protecting the circuit component from the plasma gas via the screening layer and auxiliary layer.

Abstract: A method for protecting a circuit component on a semiconductor substrate from a plasma etching or other removal process includes forming a screening layer over an auxiliary layer to conceal at least an area of the auxiliary layer that overlays at least a portion of the circuit component, such as for example a high-ohmic poly resistor. The method transfers a pattern defined by a mask onto the screening layer by selectively removing portions of the screening layer in accordance with the pattern. Portions of the auxiliary layer that are not protected by the screening layer are removed using a plasma gas selective to the auxiliary layer material, without removing the area of the auxiliary layer that overlays the portion of the circuit component, thereby protecting the circuit component from the plasma gas via the screening layer and auxiliary layer.

Abstract: A method for protecting a circuit component on a semiconductor substrate from a plasma etching or other removal process includes forming a screening layer over an auxiliary layer to conceal at least an area of the auxiliary layer that overlays at least a portion of the circuit component, such as for example a high-ohmic poly resistor. The method transfers a pattern defined by a mask onto the screening layer by selectively removing portions of the screening layer in accordance with the pattern. Portions of the auxiliary layer that are not protected by the screening layer are removed using a plasma gas selective to the auxiliary layer material, without removing the area of the auxiliary layer that overlays the portion of the circuit component, thereby protecting the circuit component from the plasma gas via the screening layer and auxiliary layer.

Abstract: A method for protecting a circuit component on a semiconductor substrate from a plasma etching or other removal process includes forming a screening layer over an auxiliary layer to conceal at least an area of the auxiliary layer that overlays at least a portion of the circuit component, such as for example a high-ohmic poly resistor. The method transfers a pattern defined by a mask onto the screening layer by selectively removing portions of the screening layer in accordance with the pattern. Portions of the auxiliary layer that are not protected by the screening layer are removed using a plasma gas selective to the auxiliary layer material, without removing the area of the auxiliary layer that overlays the portion of the circuit component, thereby protecting the circuit component from the plasma gas via the screening layer and auxiliary layer.