Abstract: A digital acoustic device including: at least one suspended diaphragm facing a support and at least one actuator associated with the diaphragm, the associated actuator being configured to move the diaphragm away from and/or closer to the support; a stop mechanism configured to interrupt movement of the diaphragm further to activating the actuator when the diaphragm has a non-zero speed, the stop mechanism being sized to interrupt the movement of the diaphragm when the movement of the diaphragm is greater than or equal to 50% of the theoretical maximum stroke of the diaphragm and lower than or equal to 95% of the theoretical maximum stroke of the diaphragm.

Abstract: Digital loudspeaker comprising a support, a plurality of first membranes suspended on the support, said first membranes being bistable, and said loudspeaker comprising actuator for each of the first membranes that can change each of the first membranes from a first stable state to a second stable state and vice versa, and a controller for controlling said first actuator.

Abstract: A device for generating a second temperature variation ?T2 from a first use temperature variation ?T1, includes an elastocaloric material layer, having an internal temperature which is able to vary by ?T2 in response to a given mechanical stress variation ?? applied to the elastocaloric material layer. The variation ?? being induced by the first use temperature variation ?T1 There is a suspended element in mechanical contact with the elastocaloric material layer so as to apply to this layer a mechanical stress that varies in response to the use temperature variation ?T1. The suspended element is arranged so as to make the mechanical stress applied to the elastocaloric material layer vary by ?? in response to the temperature variation ?T1 to generate the second temperature variation ?T2.

Abstract: The integrated circuit comprises a support substrate having opposite first and second main surfaces. A cavity passes through the support substrate and connects the first and second main surfaces. The integrated circuit comprises a device with a mobile element, the mobile element and a pair of associated electrodes of which are included in a cavity. An anchoring node of the mobile element is located at the level of the first main surface. The integrated circuit comprises a first elementary chip arranged at the level of the first main surface and electrically connected to the device with a mobile element.

Abstract: The present disclosure relates to a method of adjusting the resonance frequency of a vibrating element, comprising measuring the resonance frequency of the vibrating element, determining, using abacuses and as a function of the resonance frequency measured, a dimension and a position of at least one area of modified thickness to be formed on the vibrating element so that the resonance frequency thereof corresponds to a setpoint frequency, and forming on the vibrating element, an area of modified thickness of the determined dimension and position.

Abstract: A vibrating nano-scale or micro-scale electromechanical component including a vibrating mechanical element that cooperates with at least one detection electrode. The detection electrode is flexible and is configured to vibrate in phase opposition relative to the vibrating mechanical element. Such a component may find, for example, application to resonators or motion sensors.

Abstract: A method for forming a resonator including a resonant element, the resonant element being at least partly formed of a body at least partly formed of a first conductive material, the body including open cavities, this method including the steps of measuring the resonator frequency; and at least partially filling said cavities.

Abstract: The present disclosure relates to a method of adjusting the resonance frequency of a vibrating element, comprising measuring the resonance frequency of the vibrating element, determining, using abacuses and as a function of the resonance frequency measured, a dimension and a position of at least one area of modified thickness to be formed on the vibrating element so that the resonance frequency thereof corresponds to a setpoint frequency, and forming on the vibrating element, an area of modified thickness of the determined dimension and position.

Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

Abstract: The integrated circuit comprises a support substrate having opposite first and second main surfaces. A cavity passes through the support substrate and connects the first and second main surfaces. The integrated circuit comprises a device with a mobile element, the mobile element and a pair of associated electrodes of which are included in a cavity. An anchoring node of the mobile element is located at the level of the first main surface. The integrated circuit comprises a first elementary chip arranged at the level of the first main surface and electrically connected to the device with a mobile element.

Abstract: A method for forming a resonator including a resonant element, the resonant element being at least partly formed of a body at least partly formed of a first conductive material, the body including open cavities, this method including the steps of measuring the resonator frequency; and at least partially filling said cavities.

Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

Abstract: The invention relates to a method of realization of a sacrificial layer, including the steps of: lithography of a resin deposited on a substrate in order to supply a lithographed resist pattern on a substrate zone, the zone having a given size and a given form, the pattern occupying a given volume, annealed according to a thermal cycle of the lithographed resist pattern, the method being characterised in that it includes, according to the resin, the determination of the size and of the form of said zone of the substrate, and the determination of the volume of the resin deposited on said zone so that the thermal cycle annealing supplies a profile chosen from among the following profiles: a planarising domed profile and a “double air gap” profile.

Abstract: A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

Abstract: A vibrating nano-scale or micro-scale electromechanical component including a vibrating mechanical element that cooperates with at least one detection electrode. The detection electrode is flexible and is configured to vibrate in phase opposition relative to the vibrating mechanical element. Such a component may find, for example, application to resonators or motion sensors.

Abstract: A resonator including a resonant element having a bulk and columns of a material having a Young's modulus with a temperature coefficient having a sign opposite to that of the bulk.

Abstract: Method for making an electromechanical component on a plane substrate and comprising at least one structure vibrating in the plane of the substrate and actuation electrodes. The method comprises at least the following steps in sequence: formation of the substrate comprising one silicon area partly covered by two insulating areas, formation of a sacrificial silicon and germanium alloy layer by selective epitaxy starting from the uncovered part of the silicon area, formation of a strongly doped silicon layer by epitaxy, comprising a monocrystalline area arranged on said sacrificial layer and two polycrystalline areas arranged on insulating areas, simultaneous formation of the vibrating structure and actuation electrodes, by etching of a predetermined pattern in the monocrystalline area designed to form spaces between the electrodes and the vibrating structure, elimination of said sacrificial silicon and germanium alloy layer by selective etching.

Abstract: A method for forming a variable capacitor including a conductive strip covering the inside of a cavity, and a flexible conductive membrane placed above the cavity, the cavity being formed according to the steps of: forming a recess in the substrate; placing a malleable material in the recess; having a stamp bear against the substrate at the level of the recess to give the upper part of the malleable material a desired shape; hardening the malleable material; and removing the stamp.

Abstract: A first electrode is integral to a beam having two ends securedly affixed to a support fixed onto a substrate. Residual stresses cause buckling of the beam so that the arch of the beam is close to at least one second electrode. The support can be formed by a ring fixed to the substrate by means of two fixing bases arranged on each side of the ring on a fixing axis passing through the centre of the ring, the beam being arranged on a diameter of the ring perpendicular to the fixing axis. The ring comprises at least one layer tensile stressed along the fixing axis. The beam can comprise at least one layer stressed in compression along a longitudinal axis of the beam. The second electrode can be integral to an additional support, the beam being arranged between the substrate and the second electrode.

Abstract: The variable capacitance (1) according to the invention is based on a novel principle: a dielectric fluid (20) is placed in the air gap constituted by two capacitor electrodes (12, 14), the fluid being able to be displaced in a direction and outside the cavity (10) formed between said two electrodes (12, 14). Advantageously, the dielectric fluid (20) is displaced according to the principle of communicating vessels, with the presence of a second cavity (30) in fluidic relation with the first cavity. Actuation electrodes (46, 48) in the second cavity (30) induce the deflection of a membrane (44) in order to modify the relative heights of fluidic liquid in the two cavities (10, 30).