Abstract: An assembly for the deposition of silicon nanostructures comprising a deposition chamber, which is defined by a side wall and by two end walls; a microwave generator, which is adapted to generate microwaves inside the deposition chamber; an electromagnetic termination wall, made of a conductor material and reflecting the microwave radiation, which is such as to create a termination for a TE-mode waveguide and is housed inside the deposition chamber; and a substrate-carrier support, which is made of a dielectric material and on which the substrate is housed on which to perform the growth of silicon nanostructures. The substrate-carrier support is arranged inside the deposition chamber above the termination wall.

Abstract: An assembly for the deposition of silicon nanostructures comprising a deposition chamber, which is defined by a side wall and by two end walls; a microwave generator, which is adapted to generate microwaves inside the deposition chamber; an electromagnetic termination wall, made of a conductor material and reflecting the microwave radiation, which is such as to create a termination for a TE-mode waveguide and is housed inside the deposition chamber; and a substrate-carrier support, which is made of a dielectric material and on which the substrate is housed on which to perform the growth of silicon nanostructures. The substrate-carrier support is arranged inside the deposition chamber above the termination wall.

Abstract: The present invention concerns a device having a first and a second differential oscillators (1, 2; 1?2?) coupled to and in quadrature-phase with each other, comprising first and second resonant electronic means (L1, C1, C2; L2, C3, C4) respectively, which are apt to provide, respectively on first two and second two terminals (NODE—1, NODE—2; NODE—3, NODE 4), first two and second two oscillating signals (VNODE—1, VNODE—2; VNODE—3, VNODE—4), said first two oscillating signals (VNODE—1, VNODE—2) being in phase opposition to each other and in quadrature-phase with said second two oscillating signals (VNODE—3, VNODE—4), the device being characterised in that it comprises first generator electronic means (M13-M24) apt to detect first instants of passage through a first reference value of each one of said first oscillating signals (VNODE—1, VNODE—2) and to generate first power supply pulses for said second resonant electronic means (L2, C3, C4) in second instants, and in that it comprises second generator electroni

Abstract: The present invention concerns a differential oscillator device, comprising resonant electronic means, capable to provide on at least two terminals at least one oscillating signal VOUT, which comprises a generator electronic means capable to supply at least one power supply pulsed signal to said resonant electronic means in phase relation with said at least one oscillating signal VOUT. The present invention further concerns a process of supplying pulsed power to such a differential oscillator device.

Abstract: The present invention concerns a differential oscillator device, comprising resonant electronic means, capable to provide on at least two terminals at least one oscillating signal VOUT, which comprises a generator electronic means capable to supply at least one power supply pulsed signal to said resonant electronic means in phase relation with said at least one oscillating signal VOUT. The present invention further concerns a process of supplying pulsed power to such a differential oscillator device.

Abstract: A system for the detection of infrared light (IR with wavelength &lgr;>800 nm) of high sensitivity. It is based on the measurement of the capacitance in structures made of amorphous silicon, constituted of a junction having two electrodes connecting to outside and susceptible of being built using already-known technologies for the deposition of thin films. The p+ and n+ layers (FIG. 1) are made of materials strongly doped with boron and phosphorous atoms. During the fabrication process the temperatures are such as to permit its construction on various substrates. The technologies used make its fabrication possible on large areas and its conformation in two-dimensional matrices of high resolution.

Abstract: Thin film detector of ultraviolet radiation with high spectral selectivity option, and a structure placed between two electrodes, formed by the superposition of semiconductor thin films such as hydrogenated amorphous silicon and its alloys with carbon. The device is able to absorb a large quantity of UV radiation and to convert it into electric current being transparent to photons of longer wavelengths. Its deposition technique allows fabrication on substrates of glass, plastic, metal, ceramic types of materials (also opaque, also flexible), on which a conductor material film has been predeposited. It can be fabricated on substrates of any size.

Abstract: Variable spectrum photodetector allowing the detection of the three main colors of the visible spectrum (red, green and blue) by varying the bias voltage by a few volts around zero. It is built using known thin-film technology and is externally connected by means of two electrical terminals, thus rendering the realization of integrated 2D matrices extremely easy. It is especially applied to the manufacture of TV cameras, fax machines, etc. and of all systems requiring images reconstruction, its structure consisting of a specific overlaying of thin films, preferably of hydrogenated amorphous silicon (a-Si:H) and of its silicon-carbon alloys (a-SiC:H) and silicon-germanium (a-SiGe:H) placed by "Glow Discharge" technique. The invention can be applied to big dimensions structures. Advantages essentially are electrical simplicity and, consequently, it has more maintainability.