Patents by Inventor Fan Ren
Fan Ren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9429573Abstract: Embodiments of the present invention provide antibody functionalized high electron mobility transistor (HEMT) devices for marine or freshwater pathogen sensing. In one embodiment, the marine pathogen can be Perkinsus marinus. A sensing unit can include a wireless transmitter fabricated on the HEMT. The sensing unit allows testing in areas without direct access to electrical outlets and can send the testing results to a central location using the wireless transmitter. According to embodiments, results of testing can be achieved within seconds.Type: GrantFiled: July 22, 2014Date of Patent: August 30, 2016Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.Inventors: Barbara Jane Sheppard, Yu-Lin Wang, Fan Ren, Stephen John Pearton
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Publication number: 20160175243Abstract: The subject invention concerns nanorods, compositions and substrates comprising nanorods, and methods of making and using nanorods and nanorod compositions and substrates. In one embodiment, the nanorod is composed of Zinc oxide (ZnO). In a further embodiment, a nanorod of the invention further comprises SiO2 or TiO2. In a specific embodiment, a nanorod of the invention is composed of ZnO coated with SiO2. Nanorods of the present invention are useful as an adhesion-resistant biomaterial capable of reducing viability in anchorage-dependent cells.Type: ApplicationFiled: January 7, 2015Publication date: June 23, 2016Inventors: TANMAY P. LELE, FAN REN, BENJAMIN G. KESELOWSKY, JIYEON LEE, ANAND GUPTE, BYUNG-HWAN CHU, KARL R. ZAWOY
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Patent number: 9366645Abstract: Embodiments of the present invention provide binding molecule-functionalized high electron mobility transistors (HEMTs) that can be used to detect toxins, pathogens and other biological materials. In a specific embodiment, an antibody-functionalized HEMT can be used to detect botulinum toxin. The antibody can be anchored to a gold-layered gate area of the HEMT through immobilized thioglycolic acid. Embodiments of the subject detectors can be used in field-deployable electronic biological applications based on AlGaN/GaN HEMTs.Type: GrantFiled: January 7, 2014Date of Patent: June 14, 2016Assignee: University of Florida Research Foundation, Inc.Inventors: Fan Ren, Stephen John Pearton, Tanmay P. Lele
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Patent number: 9316637Abstract: Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.Type: GrantFiled: December 6, 2013Date of Patent: April 19, 2016Assignee: University of Florida Research Foundation, Inc.Inventors: Fan Ren, Stephen John Pearton, Tanmay Lele, Hung-Ta Wang, Byoung-Sam Kang
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Patent number: 9236443Abstract: High electron mobility transistors (HEMTs) having improved I-V characteristics and reliability are provided. According to one embodiment, a selective implantation is performed to form a damage region in a gate-to-drain region of, for example, an I?A?N/GaN HEMT. The selective implantation can be performed by irradiating some or all of a gate-to-drain region of an InAlN/GaN HEMT on a substrate with protons or other ions such as Ge ions, He ions, N ions, or O ions. The damage region can extend in a region below a 2DEG interface of the HEMT.Type: GrantFiled: September 11, 2013Date of Patent: January 12, 2016Assignee: University of Florida Research Foundation, IncorporatedInventors: Fan Ren, Stephen John Pearton, Jihyun Kim
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Patent number: 9207330Abstract: A positioning device and a positioning method thereof are provided. The positioning device can cooperate with a first satellite group and a second satellite group, and it comprises a storage, a receiver and a processor. The receiver is configured to receive a first satellite group signal from the first satellite group and a second satellite group signal from the second satellite group. The processor is electrically connected to the storage and the receiver, and configured to calculate a positioning offset value according to one of the first satellite group signal and the second satellite group signal. In addition, the processor is configured to calculate a positioning result according to the second satellite group signal and the positioning offset, and store the positioning result in the storage.Type: GrantFiled: January 4, 2012Date of Patent: December 8, 2015Assignee: Institute For Information IndustryInventors: Fan-Ren Chang, He-Sheng Wang, Hung-Wei Chen, Chih-Horng Li, Shu-Min Chuang, Ping-Feng Wang, Chih-Min Hsu, Shan-Yuan Yang
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Publication number: 20150236122Abstract: High electron mobility transistors (HEMTs) having improved I-V characteristics and reliability are provided. According to one embodiment, a selective implantation is performed to form a damage region in a gate-to-drain region of, for example, an I?Al?N/GaN HEMT. The selective implantation can be performed by irradiating some or all of a gate-to-drain region of an InAlN/GaN HEMT on a substrate with protons or other ions such as Ge ions, He ions, N ions, or O ions. The damage region can extend in a region below a 2 DEG interface of the HEMT.Type: ApplicationFiled: September 11, 2013Publication date: August 20, 2015Inventors: Fan Ren, Stephen John Pearton, Jihyun Kim
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Publication number: 20140339700Abstract: Contacts for semiconductor devices are formed where a barrier layer comprising graphene is situated between a first layer comprising a conductor, and a second layer comprising a second conductor or a semiconductor. For example, a metal layer can be formed on a graphene layer residing on a semiconductor. The barrier layer can be directly formed on some second layers, for example, graphene can be transferred from an organic polymer/graphene bilayer structure and the organic polymer removed and replaced with a metal or other conductor that comprises the first layer of the contact. The bilayer can be formed by CVD deposition on a metallic second layer, or the graphene can be formed on a template layer, for example, a metal layer, and bound by a binding layer comprising an organic polymer to form an organic polymer/graphene/metal trilayer structure. The template layer can be removed to yield the bilayer structure.Type: ApplicationFiled: December 18, 2012Publication date: November 20, 2014Inventors: Fan Ren, Stephen John Pearton, Jihyun Kim, Hong-Yeol Kim
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Publication number: 20140329302Abstract: Embodiments of the present invention provide antibody functionalized high electron mobility transistor (HEMT) devices for marine or freshwater pathogen sensing. In one embodiment, the marine pathogen can be Perkinsus marinus. A sensing unit can include a wireless transmitter fabricated on the HEMT. The sensing unit allows testing in areas without direct access to electrical outlets and can send the testing results to a central location using the wireless transmitter. According to embodiments, results of testing can be achieved within seconds.Type: ApplicationFiled: July 22, 2014Publication date: November 6, 2014Inventors: Barbara Jane SHEPPARD, Yu-Lin WANG, Fan REN, Stephen John PEARTON
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Patent number: 8835984Abstract: Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEMTs), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PHEMTs, InAlAs/InGaAs PHEMTs, Sb based HEMTs, or InAs based HEMTs, the HEMTs having functionalization at a gate surface with target receptors. The target receptors allow sensitivity to targets (or substrates) for detecting breast cancer, prostate cancer, kidney injury, chloride, glucose, metals or pEI where a signal is generated by the HEMI when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.Type: GrantFiled: March 20, 2009Date of Patent: September 16, 2014Assignee: University of Florida Research Foundation, Inc.Inventors: Fan Ren, Stephen John Pearton, Tanmay Lele, Hung-Ta Wang, Byoung-Sam Kang
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Patent number: 8836351Abstract: A high electron mobility transistor (HEMT) capable of performing as a chlorine sensor is disclosed. In one implementation, a silver chloride layer can be provided on a gate region of the HEMT. In one application, the HEMTs can be used for the measurement and detection of chloride in bio-sensing applications. In another application, the HEMTs can be used for the detection of chloride in water for environmental and health applications.Type: GrantFiled: November 13, 2008Date of Patent: September 16, 2014Assignee: University of Florida Research Foundation, Inc.Inventors: Fan Ren, Stephen John Pearton
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Patent number: 8828713Abstract: Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.Type: GrantFiled: December 13, 2010Date of Patent: September 9, 2014Assignee: University of Florida Research Foundation, Inc.Inventors: Fan Ren, Stephen John Pearton, Tanmay Lele
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Publication number: 20140143309Abstract: In a method for displaying information of a network interface card (NIC) in an electronic device, the NIC is configured with a display screen. When the NIC is activated, a request is transmitted to a dynamic host configuration protocol (DHCP) server for acquiring an Internet Protocol (IP) address. The IP address is received from the DHCP server, and displayed on the display screen of the NIC, which provides constant and convenient reference information for the benefit of a user.Type: ApplicationFiled: August 8, 2013Publication date: May 22, 2014Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.Inventors: YUE-HUA SHEN, FAN REN
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Publication number: 20140127675Abstract: Embodiments of the present invention provide binding molecule-functionalized high electron mobility transistors (HEMTs) that can be used to detect toxins, pathogens and other biological materials. In a specific embodiment, an antibody-functionalized HEMT can be used to detect botulinum toxin. The antibody can be anchored to a gold-layered gate area of the HEMT through immobilized thioglycolic acid. Embodiments of the subject detectors can be used in field-deployable electronic biological applications based on AlGaN/GaN HEMTs.Type: ApplicationFiled: January 7, 2014Publication date: May 8, 2014Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.Inventors: FAN REN, STEPHEN JOHN PEARTON, TANMAY P. LELE
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Publication number: 20140120630Abstract: Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.Type: ApplicationFiled: December 6, 2013Publication date: May 1, 2014Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INCORPORATEDInventors: FAN REN, STEPHEN JOHN PEARTON, TANMAY LELE, HUNG-TA WANG, BYOUNG-SAM KANG
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Patent number: 8578757Abstract: Exemplary embodiments provide a self-powered wireless gas sensor system and a method for gas sensing using the system. The system can be used to detect and constantly track a presence of various gases including hydrogen, ozone and/or any hydrocarbon gas, and remotely transmit the sensing signal. The system can include a low power gas sensor that consumes less than about 30 nano-watts of power. As a result, the system can detect the presence of hydrogen at about 10 ppm. The sensor can also provide a fast response time of about 1-2 seconds. In various embodiments, the system can be physically small and packaged with all components assembled as a single compact unit.Type: GrantFiled: October 5, 2006Date of Patent: November 12, 2013Assignee: University of Florida Research Foundation, Inc.Inventors: Fan Ren, Jenshan Lin, David Paul Norton, Stephen John Pearton
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Publication number: 20120297582Abstract: An improved tie hook, which comprising a hook body; a hook is set at one side of the hook body, and a rope is connected at the other side; a through-hole is set at the center of the hook body; the material consumption and production cost can be reduced, and the hook can be connected with other objects more flexibly; moreover, this can improve the structural strength and ductility of the hook, prevent the tension fracture and extend its service life, enabling the user to apply force more easily via the through-hole and grasp firmly the hook to avoid any slippage.Type: ApplicationFiled: May 26, 2011Publication date: November 29, 2012Inventor: Fan Ren Lee
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Publication number: 20120293364Abstract: A positioning device and a positioning method thereof are provided. The positioning device can cooperate with a first satellite group and a second satellite group, and it comprises a storage, a receiver and a processor. The receiver is configured to receive a first satellite group signal from the first satellite group and a second satellite group signal from the second satellite group. The processor is electrically connected to the storage and the receiver, and configured to calculate a positioning offset value according to one of the first satellite group signal and the second satellite group signal. In addition, the processor is configured to calculate a positioning result according to the second satellite group signal and the positioning offset, and store the positioning result in the storage.Type: ApplicationFiled: January 4, 2012Publication date: November 22, 2012Applicant: INSTITUTE FOR INFORMATION INDUSTRYInventors: Fan-Ren Chang, He-Sheng Wang, Hung-Wei Chen, Chih-Horng Li, Shu-Min Chuang, Ping-Feng Wang, Chih-Min Hsu, Shan-Yuan Yang
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Publication number: 20120271180Abstract: A mouse includes an aperture defined in its top, a light source, and a data processing unit partially positioned external to the housing from the aperture. When the mouse is covered by a palm of a user and the light source emits infrared light, the infrared light reaches the palm of the user through the aperture, and some of the infrared light is reflected and received by the data processing unit. The data processing unit calculates and measures the heart rate and body temperature of the user against physiological parameters.Type: ApplicationFiled: July 7, 2011Publication date: October 25, 2012Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.Inventors: FAN REN, YUE-HUA SHEN
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Publication number: 20120246895Abstract: An improved belt binder structure having a binder body with a flat base and the two sides bended upward to form side panels that constitute a a binder body with a flat base with two sides bended upward to form an enclosure space for enclosing a reel, a ratchet wheel, a handle, a locking plate and a control pulling plate attached to the two side panels of the handle and can move up and down by the connecting points, and whereas the frontal portion of the control pulling plate has locking structure that locks with the positioning slot on the flat base and the bottom of the plate engages with the ratchet wheels.Type: ApplicationFiled: March 28, 2011Publication date: October 4, 2012Inventor: Fan Ren Lee