Abstract: A process for the preparation of thin film transistors and thin film transistor arrays as described wherein, in a single pump-down, the semiconductive pad, the source electrode, the drain electrode and an insulating layer over the source electrode, drain electrode, and the exposed portion of the semiconductive layer is applied in a single vacuum pump-down by the deposition of the various materials through a shadow mask having openings therein of a size equal to the size of the semiconductive pad to be deposited. The mask is first utilized to deposit the semiconductive pad then moved in a direction and the first conductive electrode is deposited then moved in a direction 180.degree. with respect to the first direction a distance of approximately twice that of the original motion and the second conductor applied by deposition through the openings in the mask. Finally, the remaining portion of the thin film transistors are completed by conventional technology.

Abstract: Thin film transistor arrays are prepared by a vacuum deposition technique wherein only a single deposition of discrete areas of an insulating material are deposited through a mask. No registration is required to form the various elements of the transistors. A unique structure is described wherein the contact of the semiconductor material with the source electrode, the source bus conductors, and the drain electrode is coterminous with conductive material forming the source electrode and bus conductors and the drain electrode.