Abstract: A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a base, a buffer layer, a mask layer and a first GaN layer. The buffer layer is disposed on the base, wherein doped regions are disposed in a portion of the surface of the buffer layer. The mask layer is disposed on the buffer layer and located on the doped regions. The first GaN layer is disposed on the buffer layer and covers the mask layer.

Abstract: A semiconductor device, a semiconductor substrate and a method of forming the same are disclosed. The semiconductor substrate includes a first silicon-containing layer, a single crystalline III-V compound semiconductor layer and an amorphous III-V compound semiconductor layer. The first silicon-containing layer has a first region and a second region. The single crystalline III-V compound semiconductor layer is disposed on the first silicon-containing layer in the first region. The amorphous III-V compound semiconductor layer is disposed on the first silicon-containing layer in the second region.

Abstract: A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate includes a base, a buffer layer, a mask layer and a first GaN layer. The buffer layer is disposed on the base, wherein doped regions are disposed in a portion of the surface of the buffer layer. The mask layer is disposed on the buffer layer and located on the doped regions. The first GaN layer is disposed on the buffer layer and covers the mask layer.

Abstract: A semiconductor device, a semiconductor substrate and a method of forming the same are disclosed. The semiconductor substrate includes a first silicon-containing layer, a single crystalline III-V compound semiconductor layer and an amorphous III-V compound semiconductor layer. The first silicon-containing layer has a first region and a second region. The single crystalline III-V compound semiconductor layer is disposed on the first silicon-containing layer in the first region. The amorphous III-V compound semiconductor layer is disposed on the first silicon-containing layer in the second region.

Abstract: A light-emitting diode (LED) module and a lamp using the same are provided. The LED module includes a substrate and several light-emitting packages. Each light-emitting package includes an optical wavelength conversion layer and a light-emitting diode having a first light-output surface, a bonding surface, and several second light-output surfaces. The bonding surface is opposite the first light-output surface and connected to the substrate. The second light-output surfaces are between the first light-output surface and the bonding surface. The optical wavelength conversion layer covers the first and second light-output surfaces. The distance between the bonding surface and the top surface of the optical wavelength conversion layer represents a light source thickness. The distance between two adjacent light-emitting packages represents a spacing of light sources. Specifically, the ratio of the spacing of light sources to the light source thickness is between 1 and 6.3.

Abstract: A light-emitting diode chip package is provided. The light-emitting diode chip package includes a substrate; a light-emitting diode chip set (LED chip set) disposed over the substrate, wherein the LED chip set is formed by a plurality of light-emitting diode chips (LED chips) in one piece; and at least two electrodes disposed over the substrate and electrically connected to the LED chip set.

Abstract: A light-emitting diode device includes a shell with a recess, wherein the shell does not contain metal oxide. A plurality of lead frames extends from the bottom of the recess to the outside of the shell. At least an UV light-emitting diode (LED) chip is disposed on the bottom of the recess and is electrically connected to the lead frames, wherein the UV LED chip has a wavelength range of 200 nm-400 nm. In addition, an encapsulation adhesive fills the recess to cover the UV LED chip.

Abstract: A light-emitting diode (LED) module and a lamp using the same are provided. The LED module includes a substrate and several light-emitting packages. Each light-emitting package includes an optical wavelength conversion layer and a light-emitting diode having a first light-output surface, a bonding surface, and several second light-output surfaces. The bonding surface is opposite the first light-output surface and connected to the substrate. The second light-output surfaces are between the first light-output surface and the bonding surface. The optical wavelength conversion layer covers the first and second light-output surfaces. The distance between the bonding surface and the top surface of the optical wavelength conversion layer represents a light source thickness. The distance between two adjacent light-emitting packages represents a spacing of light sources. Specifically, the ratio of the spacing of light sources to the light source thickness is between 1 and 6.3.

Abstract: A light-emitting diode chip package is provided. The light-emitting diode chip package includes a substrate; a light-emitting diode chip set (LED chip set) disposed over the substrate, wherein the LED chip set is formed by a plurality of light-emitting diode chips (LED chips) in one piece; and at least two electrodes disposed over the substrate and electrically connected to the LED chip set.

Abstract: A light-emitting diode chip package is provided. The light-emitting diode chip package includes a substrate; a light-emitting diode chip set (LED chip set) disposed over the substrate, wherein the LED chip set is formed by a plurality of light-emitting diode chips (LED chips) in one piece; and at least two electrodes disposed over the substrate and electrically connected to the LED chip set.