Patents by Inventor Fang Chen

Fang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11954527
    Abstract: A resource allocation method comprises using resources with a used resource quantity of a machine learning system to execute a first experiment which has a first minimum resource demand, receiving an experiment request associated with a target dataset, deciding a second experiment according to the target dataset, deciding a second minimum resource demand of the second experiment, allocating resources with a quantity equal to the second minimum resource demand for an execution of the second experiment when a total resource quantity of the machine learning system meets a sum of the first minimum resource demand and the second minimum resource demand and a difference between the total resource quantity and the used resource quantity meets the second minimum resource demand, determining that the machine learning system has an idle resource, and selectively allocating said the idle resource for at least one of the first experiment and the second experiment.
    Type: Grant
    Filed: March 30, 2021
    Date of Patent: April 9, 2024
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Shih-Chang Chen, Yi-Chin Chu, Yi-Fang Lu
  • Patent number: 11954105
    Abstract: Methods and computer systems for storing a query plan in a cache are provided. The method can include: determining a use frequency of the query plan; determining a target storage layer for storing the query plan based on the determined use frequency, wherein the cache includes at least two storage layers and each of the storage layers is associated with a compression level of query plans; processing the query plan according to the compression level of the target storage layer; and storing the processed query plan in the target storage layer.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: April 9, 2024
    Assignee: Alibaba Group Holding Limited
    Inventors: Fang Zheng, Zhe Chen, Ruiping Li, Congnan Luo, Yu Dong, Jie Zhang, Li Zhang, Ji Jiannan, Dongcan Cui, Chaoqun Zhan
  • Publication number: 20240113838
    Abstract: Uplink control channel group and cross-carrier scheduling is disclosed for cooperative communications of a virtual UE. In an aspect, a UE reports a cooperative configuration with member UEs of a virtual UE and reports associations between a plurality of component carriers (CCs) allocated to a cell group and each member UE of the virtual UE. The UE may then receive an uplink control transmission configuration message dividing each member UE into an assigned uplink control transmission group and assign one or more component CCs into one or more CC sets, wherein each CC set is assigned to each uplink control transmission group. The UE may receive an uplink scheduling message from a serving base station, wherein the uplink scheduling message includes an uplink schedule for CCs within the CC set assigned to an uplink control transmission group associated with the UE. Other aspects and features are also claimed and described.
    Type: Application
    Filed: April 16, 2021
    Publication date: April 4, 2024
    Inventors: Mostafa Khoshnevisan, Yitao Chen, Aleksandar Damnjanovic, Xiaoxia Zhang, Jing Sun, Tao Luo, Fang Yuan, Juan Montojo, Rajat Prakash
  • Publication number: 20240111210
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.
    Type: Application
    Filed: May 9, 2023
    Publication date: April 4, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Jui-Hsiung LIU, Pin-Chia LIAO, Ting-An LIN, Ting-An SHIH, Yu-Fang TSENG, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU
  • Publication number: 20240113097
    Abstract: An integrated circuit includes a first standard cell having a first pFET and a first nFET integrated, and having a first dielectric gate on a first standard cell boundary. The integrated circuit further includes a second standard cell being adjacent to the first standard cell, having a second pFET and a second nFET integrated, and having a second dielectric gate on a second standard cell boundary. The integrated circuit also includes a first filler cell configured between the first and second standard cells, and spanning from the first dielectric gate to the second dielectric gate. The first pFET and the second pFET are formed on a first continuous active region. The first nFET and the second nFET are formed on a second continuous active region.
    Type: Application
    Filed: November 29, 2023
    Publication date: April 4, 2024
    Inventors: Fang Chen, Jhon Jhy Liaw
  • Publication number: 20240112912
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2): Zr12O8(OH)14(RCO2)18??Formula (A1); or Hf6O4(OH)6(RCO2)10??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.
    Type: Application
    Filed: July 28, 2023
    Publication date: April 4, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Jui-Hsiung LIU, Yu-Fang TSENG, Pin-Chia LIAO, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU
  • Patent number: 11950016
    Abstract: The present invention provides a control method of a receiver. The control method includes the steps of: when the receiver enters a sleep/standby mode, continually detecting an auxiliary signal from an auxiliary channel to generate a detection result; and if the detection result indicates that the auxiliary signal has a preamble or a specific pattern, generating a wake-up control signal to wake up the receiver before successfully receiving the auxiliary signal having a wake-up command.
    Type: Grant
    Filed: April 15, 2020
    Date of Patent: April 2, 2024
    Assignee: MEDIATEK INC.
    Inventors: Chun-Chia Chen, Chih-Hung Pan, Chia-Chi Liu, Shun-Fang Liu, Meng-Kun Li, Chao-An Chen
  • Publication number: 20240100106
    Abstract: The present disclosure provides an isolated recombinant oncolytic adenovirus, a pharmaceutical composition, and uses thereof for drugs for treatment of tumors and/or cancers. The recombinant oncolytic adenovirus is a selectively replicating oncolytic adenovirus, and the genome of the recombinant oncolytic adenovirus is integrated with a coding sequence of exogenous shRNA capable of inhibiting PDL1 expression in tumor cells. The replication capability of the virus in normal primary cells is much lower than the replication capability of the virus in tumor cells. Moreover, the expressed shPDL1 can significantly reduce the level of PDL1 protein highly expressed in tumor cells. Thus, the oncolytic killing effect of the oncolytic virus and the anti-tumor immunostimulatory effect of immune cells produce a synergistic effect.
    Type: Application
    Filed: September 13, 2023
    Publication date: March 28, 2024
    Applicant: HANGZHOU CONVERD CO., LTD.
    Inventors: Jipo SHENG, Jin FU, Ronghua ZHAO, Yun QIN, Lin CHEN, Sanmao KANG, Fang HU
  • Publication number: 20240102980
    Abstract: Gas detection devices comprise a dehydration unit a concentration unit, and a temperature control unit for controlling a temperature. The gas detection device includes a sampling mode in which sample gas flows into and out of the dehydration unit through a first port and a second port, respectively, wherein the volatile organic compounds in the sample gas are concentrated in the concentration unit. The temperature control unit may be configured such that the temperature of the sample gas after flowing out from the dehydration unit and before flowing into the concentration unit is not greater than a first preset temperature. Generation of condensed substances in the sample gas can be effectively avoided in a simple manner after the sample gas flows into the concentration unit, thereby further preventing ice blockage. Methods for detecting volatile organic compounds in a sample gas are also disclosed.
    Type: Application
    Filed: September 22, 2023
    Publication date: March 28, 2024
    Applicant: Thermo Fisher (Shanghai) Instrument Co., Ltd.
    Inventors: Te Yu HUNG, Chien Kuo CHANG, Colin ZOU, Rong Hua CHEN, Jun FANG
  • Publication number: 20240106548
    Abstract: The present disclosure provides intelligent radio frequency interference mitigation in a computing platform. The computing platform includes a processor, a memory, a system clock and a wireless network interface. The system clock can be controlled so that the processor and/or the memory may operate at a slow frequency or a fast frequency. The wireless network may operate on a radio channel that experiences radio frequency interference at the fast frequency. The system clock may be intelligently controlled to select the slow frequency to reduce radio frequency interference to prioritize execution of a network application, or to select the fast frequency to increase processor speed and prioritize execution of a local application.
    Type: Application
    Filed: September 22, 2022
    Publication date: March 28, 2024
    Inventors: Ruei-Ting LIN, Cheng-Fang LIN, Huai-yung YEN, Ren-Hao CHEN, Lo-Chun TUNG
  • Patent number: 11943373
    Abstract: An identity certificate may be issued to a blockchain node. The issuance may include issuing a first identity certificate to a first terminal and receiving a second identity certificate issuance request that is from the first terminal. A second identity certificate may be issued to the first terminal, and a third identity certificate issuance request is received from the second terminal. A third identity certificate is issued to the second terminal, so that the second terminal forwards the third identity certificate to the third terminal.
    Type: Grant
    Filed: June 2, 2021
    Date of Patent: March 26, 2024
    Assignee: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Mao Cai Li, Zong You Wang, Kai Ban Zhou, Chang Qing Yang, Hu Lan, Li Kong, Jin Song Zhang, Yi Fang Shi, Geng Liang Zhu, Qu Cheng Liu, Qiu Ping Chen
  • Patent number: 11942791
    Abstract: A self-powered wireless keyboard by modifying the structure of a traditional membrane keyboard having a volcanic crater structure. Not damaging the original membrane keyboard structure, a micro magnet core is installed inside a cylindrical protrusion block under the key cap as a mover of the induction power generation device, and an induction coil is wound in a key slot of the keyboard base as the stator of the induction power generation device. In this way, when each key is pressed, it will produce induction current. A layer of flexible solar cell can be laid on the upper surface of the key, which can generate electricity by collecting the light energy in the surrounding environment during the time of daily illumination.
    Type: Grant
    Filed: September 26, 2021
    Date of Patent: March 26, 2024
    Assignee: Beijing Institute of Technology
    Inventors: Fang Deng, Yanxin Ji, Xinyu Fan, Yeyun Cai, Chengwei Mi, Feng Gao, Jie Chen, Lihua Dou
  • Patent number: 11940692
    Abstract: An electronic device includes a substrate, a plurality of first retaining walls, a second retaining wall, and a light emitting element. The first retaining walls are arranged on the substrate. The second retaining wall is arranged on the substrate and disposed within one of the first retaining walls. The light emitting element is arranged on the substrate and disposed between the second retaining wall and one of the first retaining walls adjacent to the second retaining wall. In a cross section, there are a first distance between the light emitting element and the one of the first retaining walls, and a second distance between the light emitting element and the second retaining wall, wherein the second distance is smaller than the first distance.
    Type: Grant
    Filed: January 19, 2023
    Date of Patent: March 26, 2024
    Assignee: INNOLUX CORPORATION
    Inventors: Wei-Tsung Hsu, Chun-Fang Chen, Wei-Ning Shih
  • Publication number: 20240096712
    Abstract: Provided is a semiconductor device includes a gate electrode, a gate dielectric layer, a channel layer, an insulating layer, a first source/drain electrode and a second source/drain electrode, a second dielectric layer, and a stop segment. The gate electrode is located within a first dielectric layer that overlies a substrate. The gate dielectric layer is located over the gate electrode. The channel layer is located on the gate dielectric layer. The insulating layer is located over the channel layer. The first source/drain electrode and the second source/drain electrode are located in the insulating layer, and connected to the channel layer. The second dielectric layer is beside one of the first source/drain electrode and the second source/drain electrode. The stop segment is embedded in the second dielectric layer.
    Type: Application
    Filed: January 10, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Wei Jiang, Chieh-Fang Chen, Yen-Chung Ho, Pin-Cheng Hsu, Feng-Cheng Yang, Chung-Te Lin
  • Publication number: 20240092922
    Abstract: This disclosure relates to anti-TNFRSF9 (tumor necrosis factor receptor superfamily member 9) antibodies, antigen-binding fragments, and the uses thereof.
    Type: Application
    Filed: September 11, 2023
    Publication date: March 21, 2024
    Inventors: Yi Yang, Jingshu Xie, Chunyan Dong, Fang Yang, Chengyuan Lu, Yuelei Shen, Jian Ni, Yanan Guo, Yunyun Chen
  • Publication number: 20240091191
    Abstract: Disclosed herein is related to a method for treating a symptom associated with senescence in a subject by administering to the subject with an effective amount of corylin and/or neobavaisoflavone, wherein the symptom associated with senescence is loss of muscle strength, muscle weakness, loss of motor coordination, loss of balance, skin wrinkle, or a poor blood biochemical parameter.
    Type: Application
    Filed: September 2, 2022
    Publication date: March 21, 2024
    Applicant: Chang Gung University
    Inventors: Chin-Chuan CHEN, Yann-Lii LEU, Shu-Huei WANG, Tong-Hong WANG, Shu-Fang CHENG
  • Publication number: 20240094282
    Abstract: A circuit test structure includes a chip including a conductive line which traces a perimeter of the chip. The circuit test structure further includes an interposer electrically connected to the chip, wherein the conductive line is over both the chip and the interposer. The circuit test structure further includes a test structure connected to the conductive line. The circuit test structure further includes a testing site, wherein the test structure is configured to electrically connect the testing site to the conductive line.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 21, 2024
    Inventors: Ching-Fang CHEN, Hsiang-Tai LU, Chih-Hsien LIN
  • Patent number: 11937426
    Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.
    Type: Grant
    Filed: May 3, 2021
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Feng-Ching Chu, Feng-Cheng Yang, Katherine H. Chiang, Chung-Te Lin, Chieh-Fang Chen
  • Publication number: 20240083852
    Abstract: The present application relates to a synthesis method for N-methyl-3-substituted methyl-4-pyrazolamide derivative and N-methyl-3-substituted methyl-4-pyrazolic acid, including the following steps: step S1: synthesis of intermediate E; step S2: synthesis of intermediate D; step S3: synthesis of intermediate C; step S4: synthesis of N-methyl-3-substituted methyl-4-pyrazolamide derivative; and synthesis of N-methyl-3- substituted methyl-4-pyrazolic acid by decomposition of N-methyl-3-substituted methyl-4-pyrazolamide derivative.
    Type: Application
    Filed: August 16, 2023
    Publication date: March 14, 2024
    Inventors: Shengxue LIU, Yintao SHI, Qiang GONG, Sufang ZHONG, Jianjiang ZHANG, Xiaoyuan QIAN, Fang GUO, Rujun CHEN, Xiaoying JIAN
  • Publication number: 20240085502
    Abstract: A low-cost modular liquid nitrogen low-temperature multi-nuclear magnetic resonance probe includes a Dewar, a pluggable coil and a front-end gain amplifier. The Dewar includes a cylindrical sandwich chamber, the center of the cylindrical sandwich chamber constitutes a room-temperature chamber, a sandwich of the cylindrical sandwich chamber is divided into a vacuum chamber and a liquid nitrogen chamber by a liquid nitrogen vessel wall, the vacuum chamber is located between the room-temperature chamber and the liquid nitrogen chamber, the pluggable coil and the front-end gain amplifier are provided in the vacuum chamber, the pluggable coil comprises a coil portion and a pluggable base, the coil portion is in pluggable connection with the pluggable base, and the pluggable coil is connected with the front-end gain amplifier. The probe realizes the transmission of radio frequency pulses and the reception of magnetic resonance signals, and is applicable to whole-body imaging of a small animal.
    Type: Application
    Filed: November 10, 2021
    Publication date: March 14, 2024
    Applicant: INNOVATION ACADEMY FOR PRECISION MEASUREMENT SCIENCE AND TECHNOLOGY, CAS
    Inventors: Zhi ZHANG, Qingjia BAO, Chaoyang LIU, Xinjie LIU, Fang CHEN, Jiaxin WANG, Xin CHENG, Maili LIU