Abstract: Certain aspects of the present disclosure provide techniques for allocating channel state information (CSI) processing unit (CPU) for user equipment (UE) initiated CSI. For example, the UE may receive an indication from a network entity (e.g., a base station or gNB) configuring the UE with a number of one or more CPUs allowed to be occupied for UE-initiated CSI feedback. The UE uses the at least one of the CPUs to calculate UE-initiated CSI feedback. The UE transmits at least one report including the UE-initiated CSI feedback if one or more conditions are met, such as when a mismatch between a CSI metric for a scheduled physical downlink shared channel (PDSCH) and a CSI metric calculated as part of the UE-initiated CSI feedback is equal to or exceeding a threshold value.

Abstract: A system includes a delivery system a tube having a first open end and a second closed end, wherein the inner wall of the tube exhibits or includes surface roughness, a first liquid volume including a first liquid within the tube, and a first gas volume within the tube adjacent the first open end and separating the first liquid volume from a surrounding environment. The system further include a drive system, remote from the delivery system, which is configured to transmit a signal to controllably oscillate the first gas volume and one or more other gas volumes within the tube.

Abstract: An IC structure includes a transistor, a source/drain contact, a metal oxide layer, a non-metal oxide layer, a barrier structure, and a via. The transistor includes a gate structure and source/drain regions on opposite sides of the gate structure. The source/drain contact is over one of the source/drain regions. The metal oxide layer is over the source/drain contact. The non-metal oxide layer is over the metal oxide layer. The barrier structure is over the source/drain contact. The barrier structure forms a first interface with the metal oxide layer and a second interface with the non-metal oxide layer, and the second interface is laterally offset from the first interface. The via extends through the non-metal oxide layer to the barrier structure.

Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device includes forming nanowire structures stacked over a substrate and spaced apart from one another, and forming a dielectric material surrounding the nanowire structures. The dielectric material has a first nitrogen concentration. The method also includes treating the dielectric material to form a treated portion. The treated portion of the dielectric material has a second nitrogen concentration that is greater than the first nitrogen concentration. The method also includes removing the treating portion of the dielectric material, thereby remaining an untreated portion of the dielectric material as inner spacer layers; and forming the gate stack surrounding nanowire structures and between the inner spacer layers.

Abstract: The present application provides a method for analyzing droplets on the basis of volume distribution including obtaining a total volume V of a sample containing target molecules based on a system prepared using the sample. The system is emulsified into droplets. A droplet system is obtained when the droplets obtaining the sample executes an amplification reaction. A droplet image of the droplet system is obtained. A total number n of droplets included in the droplet system is obtained based on the droplet image. A droplet volume distribution of the droplet system is obtained based on the droplet image. A number j of negative droplets among the n droplets is counted. A quantitative analysis is performed for the target molecules according to the total volume V of the sample, the total number n of droplets, the droplet volume distribution information, and the number j of negative droplets.

Abstract: A biochemical test strip tube comprises a tube portion and a cover portion. The tube portion comprises a solution chamber and a test strip fixing member which has a horizontal spacing between its outer edge and an inner wall of the tube portion. When the cover portion seals off the tube portion, a top of the solution chamber communicates with a top of the test strip fixing member, and a horizontal spacing is provided between an outer edge of the test strip fixing member and an inner wall of the cover portion. Due to the horizontal spacing between the test paper fixing member and the inner wall of the tube portion, the biochemical test strip does not contact or form a wall against the inner wall of the tube portion to avoid affecting the detection effect when the biochemical test strip is provided inside the test strip fixing member.

Abstract: A multi-antenna system for harvesting energy and transmitting data includes an energy storing unit, antenna transmission units, and a load unit. Each antenna transmission unit includes an antenna module, a splitting module, an energy generation module, and a data processing module. The splitting module splits a wireless signal received by the antenna module into a first splitting signal and a second splitting signal and transmits the first splitting signal to an energy generation module to convert the first splitting signal into electrical energy stored in an energy storing unit and provided to the data processing module. The energy storing unit provides the electrical energy for the load unit. The data processing module receives one of the second splitting signals, converts it into a control signal, and transmits the control signal to the load unit. The load unit operates according to the control signal.

Abstract: A method includes forming a fin structure over a substrate, wherein the fin structure comprises first semiconductor layers and second semiconductor layers alternately stacked over a substrate; forming a dummy gate structure over the fin structure; removing a portion of the fin structure uncovered by the dummy gate structure; performing a selective etching process to laterally recess the first semiconductor layers, including injecting a hydrogen-containing gas from a first gas source of a processing tool to the first semiconductor layers and the second semiconductor layers; and injecting an F2 gas from a second gas source of the processing tool to the first semiconductor layers and the second semiconductor layers; forming inner spacers on opposite end surfaces of the laterally recessed first semiconductor layers of the fin structure; and replacing the dummy gate structure and the first semiconductor layers with a metal gate structure.

Abstract: Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.

Abstract: An adjustment device for adjusting a torque of a torque wrench includes a base unit, a driving unit, and a control unit. The torque wrench includes a shank body extending along an axis, an adjusting unit threadedly engaging the shank body, and a resilient member abutting against the adjusting unit. The base unit is for mounting of the torque wrench. The driving unit includes a coupling member removably connected to the adjusting unit, and a driving motor. The control unit controls the driving motor to drive rotation of the coupling member about the axis for driving rotation of the adjusting unit to thereby move the adjusting unit along the axis to vary a preload force of the resilient member and thus a torque of the torque wrench and to move the adjusting unit to a position where the torque of the torque wrench corresponds to a predetermined torque value.

Abstract: A carrying structure is provided and is defined with a main area and a peripheral area adjacent to the main area, where a plurality of packaging substrates are disposed in the main area in an array manner, a plurality of positioning holes are disposed in the peripheral area, and a plurality of positioning traces are formed along a part of the edges of the plurality of positioning holes, such that the plurality of positioning traces are formed with notches. Therefore, a plurality of positioning pins on the machine can be easily aligned and inserted into the plurality of positioning holes by the design of the plurality of positioning traces.

Abstract: A semiconductor structure includes a first fin structure and a second fin structure, a first dielectric layer disposed over the first fin structure, a second dielectric layer disposed over the second fin structure, a first gate electrode disposed over the first dielectric layer, and a second gate electrode disposed over the second dielectric layer. A thickness of the first dielectric layer and a thickness of the second dielectric layer are equal. The second fin structure includes an outer region and an inner region, and a Ge concentration in the outer portion is less than Ge concentration in the inner portion.

Abstract: A display system supporting a privacy function and a display control method are disclosed. The method includes the following. A first light source driving signal is provided to a display through a first signal path of a switch circuit to drive the display to display a first image in a first display mode. A trigger signal is generated in response to a user operation. A second light source driving signal is provided to the display through a second signal path of the switch circuit in response to the trigger signal to drive the display to display a second image in a second display mode. The first signal path is different from the second signal path. A screen brightness of the display in the second display mode is lower than a screen brightness of the display in the first display mode.

Abstract: The present disclosure provides an amorphous solid dispersion containing a Cap-dependent endonuclease inhibitor or a pharmaceutically acceptable salt thereof for oral administration, wherein the Cap-dependent endonuclease inhibitor or a pharmaceutically acceptable salt thereof is dispersed in a matrix formed from the pharmaceutically acceptable polymer. Further disclosed are methods for preparing a above amorphous solid dispersion and a use thereof for treating virus infection and a pharmaceutical composition containing same.

Abstract: A method includes forming a fin structure including a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked over a substrate. A dummy gate structure is formed across the fin structure. The exposed second portions of the fin structure are removed. A selective etching process is performed, using a gas mixture including a hydrogen-containing gas and a fluorine-containing gas, to laterally recess the first semiconductor layers. Inner spacers are formed on opposite end surfaces of the laterally recessed first semiconductor layers. Source/drain epitaxial structures are formed on opposite end surfaces of the second semiconductor layers. The dummy gate structure is removed to expose the first portion of the fin structure. The laterally recessed first semiconductor layers are removed. A gate structure is formed to surround each of the second semiconductor layers.

Abstract: A semiconductor structure includes a substrate including a first region and a second region, a first channel layer disposed in the first region and a second channel layer disposed in the second region, a first dielectric layer disposed on the first channel layer and a second dielectric layer disposed on the second channel layer, and a first gate electrode disposed on the first dielectric layer and a second gate electrode disposed on the second dielectric layer. The first channel layer in the first region includes Ge compound of a first Ge concentration, the second channel layer in the second region includes Ge compound of a second Ge concentration. The first Ge concentration in the first channel layer is greater than the second Ge concentration in the second channel layer.