Patents by Inventor Farhad Moghadam
Farhad Moghadam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240152114Abstract: Embodiments provided herein generally include apparatus and methods, controlled by flexible tuning algorithms, for generating a plasma in a plasma processing chamber. Flexible communications between equipment of the plasma processing system allows sharing of process information and equipment settings for evaluation and refinement of the tuning algorithms used. This enhances the productivity of batch processing of a plurality of semiconductor wafers during the manufacturing process since the tuning algorithms can be modified on the fly during processing thereof. The tuning algorithms may be recorded, reused and/or modified for controlling future plasma processing.Type: ApplicationFiled: November 3, 2022Publication date: May 9, 2024Inventors: Yue GUO, Kartik RAMASWAMY, Jie YU, Yang YANG, Farhad MOGHADAM
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Publication number: 20240120178Abstract: Embodiments provided herein generally include apparatus and methods in a plasma processing system for rapid and inexpensive repair and replacement of RF sensors necessary for the operation of radio frequency (RF) power generation and impedance matching equipment used for generating a plasma in a plasma chamber during semiconductor processing therein. Flexible communications between equipment of the plasma processing system allows sharing of process information and equipment settings for batch processing of a plurality of semiconductor wafers during the manufacturing process. Operational settings of a master plasma processing system may be used to control the operation of a plurality of slave processing systems. In addition, the operational settings of the master plasma processing system may be recorded and reused for controlling the plurality of slave processing systems.Type: ApplicationFiled: October 10, 2022Publication date: April 11, 2024Inventors: Yue GUO, Kartik RAMASWAMY, Farhad MOGHADAM, Yang YANG
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Patent number: 11631583Abstract: Methods of depositing a film using a plasma enhanced process are described. The method comprises providing continuous power from a power source connected to a microwave plasma source in a process chamber and a dummy load, the continuous power split into pulses having a first time and a second time defining a duty cycle of a pulse. The continuous power is directed to the microwave plasma source during the first time, and the continuous power is directed to the dummy load during the second time.Type: GrantFiled: October 21, 2020Date of Patent: April 18, 2023Assignee: Applied Materials, Inc.Inventors: Farhad Moghadam, Hari Ponnekanti, Dmitry A. Dzilno
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Publication number: 20210125820Abstract: Methods of depositing a film using a plasma enhanced process are described. The method comprises providing continuous power from a power source connected to a microwave plasma source in a process chamber and a dummy load, the continuous power split into pulses having a first time and a second time defining a duty cycle of a pulse. The continuous power is directed to the microwave plasma source during the first time, and the continuous power is directed to the dummy load during the second time.Type: ApplicationFiled: October 21, 2020Publication date: April 29, 2021Applicant: Applied Materials, Inc.Inventors: Farhad Moghadam, Hari Ponnekanti, Dmitry A. Dzilno
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Publication number: 20200316529Abstract: A method of producing a DN gel membrane includes a step (1) including producing a 1st gel membrane by (i) casting, on a substrate, a solution containing an ionic liquid A and an ionic liquid B, the ionic liquid A being made up of 1st monomers each of which has a polymerizable functional group and (ii) polymerizing the 1st monomers; and a step (2) including producing the DN gel membrane by (i) immersing the 1st gel membrane in a solution containing 2nd monomers which are different from the 1st monomers and (ii) polymerizing the 2nd monomers. This method allows for continuous-type production which is suitable for industrial mass production of DN gel membranes or acid gas separation membranes.Type: ApplicationFiled: May 29, 2017Publication date: October 8, 2020Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Shohei KASAHARA, Yudai OTA, Hideto MATSUYAMA, Eiji KAMIO, Farhad MOGHADAM
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Patent number: 7560377Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: GrantFiled: March 22, 2005Date of Patent: July 14, 2009Assignee: Applied Materials, Inc.Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon
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Patent number: 7431585Abstract: An apparatus for processing substrates is disclosed. In one embodiment, the apparatus includes a housing and a plurality of stacked cell structures in the housing. An actuator is adapted to move the plurality of stacked cell structures inside of the housing while substrates in the stacked cell structures are being heated.Type: GrantFiled: October 22, 2002Date of Patent: October 7, 2008Assignee: Applied Materials, Inc.Inventors: Jun Zhao, David Quach, Timothy Weidman, Rick J. Roberts, Farhad Moghadam, Dan Maydan
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Patent number: 7381052Abstract: An apparatus for processing substrates is disclosed. In one embodiment, the apparatus includes a housing and a plurality of stacked cell structures in the housing. An actuator is adapted to move the plurality of stacked cell structures inside of the housing while substrates in the stacked cell structures are being heated.Type: GrantFiled: June 2, 2006Date of Patent: June 3, 2008Assignee: Applied Materials, Inc.Inventors: Jun Zhao, David Quach, Timothy Weidman, Rick J. Roberts, Farhad Moghadam, Dan Maydan
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Publication number: 20070275569Abstract: One embodiment of the present invention is a method for fabricating a dielectric film, comprising chemical vapor depositing a dielectric film, and curing the dielectric film, wherein the dielectric film comprises silicon and carbon, and the chemical vapor depositing utilizes a precursor comprising one or more organo-silicon compounds and one or more carbon-carbon bond containing hydrocarbon compounds.Type: ApplicationFiled: August 14, 2007Publication date: November 29, 2007Inventors: FARHAD MOGHADAM, Jun Zhao, Timothy Weidman, Rick Roberts, Li-Qun Xia, Alexandros Demos
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Patent number: 7256139Abstract: One embodiment of the present invention is a method for fabricating a low-k dielectric film that included steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.Type: GrantFiled: January 28, 2005Date of Patent: August 14, 2007Assignee: Applied Materials, Inc.Inventors: Farhad Moghadam, Jun Zhao, Timothy Weidman, Rick J. Roberts, Li-Quan Xia, Alexandros T. Demos
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Publication number: 20060286764Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: ApplicationFiled: June 5, 2006Publication date: December 21, 2006Applicant: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh Pham, Farhad Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Publication number: 20060251800Abstract: Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process.Type: ApplicationFiled: March 20, 2006Publication date: November 9, 2006Inventors: Timothy Weidman, Kapila Wijekoon, Zhize Zhu, Avgerinos Gelatos, Amit Khandelwal, Arulkumar Shanmugasundram, Michael Yang, Fang Mei, Farhad Moghadam
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Publication number: 20060228886Abstract: A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.Type: ApplicationFiled: June 5, 2006Publication date: October 12, 2006Applicant: Applied Materials, Inc.Inventors: Lin Zhang, Xiaolin Chen, DongQing Li, Thanh Pham, Farhad Moghadam, Zhuang Li, Padmanabhan Krishnaraj
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Publication number: 20060223233Abstract: An apparatus for processing substrates is disclosed. In one embodiment, the apparatus includes a housing and a plurality of stacked cell structures in the housing. An actuator is adapted to move the plurality of stacked cell structures inside of the housing while substrates in the stacked cell structures are being heated.Type: ApplicationFiled: June 2, 2006Publication date: October 5, 2006Applicant: APPLIED MATERIALS, INC.Inventors: Jun Zhao, David Quach, Timothy Weidman, Rick Roberts, Farhad Moghadam, Dan Maydan
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Publication number: 20050260864Abstract: A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.Type: ApplicationFiled: January 27, 2004Publication date: November 24, 2005Inventors: Tzu-Fang Huang, Yung-Cheng Lu, Li-Qun Xia, Ellie Yieh, Wai-Fan Yau, David Cheung, Ralf Willecke, Kuowei Liu, Ju-Hyung Lee, Farhad Moghadam, Yeming Ma
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Publication number: 20050233576Abstract: Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.Type: ApplicationFiled: April 28, 2005Publication date: October 20, 2005Inventors: Ju-Hyung Lee, Ping Xu, Shankar Venkataraman, Li-Qun Xia, Fei Han, Ellie Yieh, Srinivas Nemani, Kangsub Yim, Farhad Moghadam, Ashok Sinha, Yi Zheng
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Publication number: 20050191846Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: ApplicationFiled: March 22, 2005Publication date: September 1, 2005Inventors: David Cheung, Wai-Fan Yau, Robert Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Poon
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Patent number: 6936551Abstract: One embodiment of the present invention is a method for fabricating a low-k dielectric film that includes steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.Type: GrantFiled: May 1, 2003Date of Patent: August 30, 2005Assignee: Applied Materials Inc.Inventors: Farhad Moghadam, Jun Zhao, Timothy Weidman, Rick J. Roberts, Li-Qun Xia, Alexandros T. Demos
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Publication number: 20050181226Abstract: A method and apparatus for electrolessly depositing a multilayer film using a fluid processing solution(s) that can clean and then electrolessly deposit a metal films having discrete or varying composition onto a conductive surface using a single processing cell. The process advantageously includes in-situ cleaning step in order to minimize the formation of oxides on the conductive surfaces, by minimizing or preventing the exposure of the conductive surfaces to oxygen (e.g., air) between the cleaning step and an electroless deposition process step(s). In one aspect, the chemical components used in the fluid processing solution(s) are selected so that the interaction of various chemical components will not drastically change the desirable properties of each of the interacting fluids, generate particles in the fluid lines or on the surface of the substrate, and/or generate a significant amount of heat which can damage the hardware or significantly change the electroless process results.Type: ApplicationFiled: January 22, 2005Publication date: August 18, 2005Inventors: Timothy Weidman, Ian Pancham, Dmitry Lubomirsky, Arulkumar Shanmugasundram, Yosef Shacham-Diamand, Farhad Moghadam
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Patent number: 6930061Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.Type: GrantFiled: August 26, 2003Date of Patent: August 16, 2005Assignee: Applied Materials Inc.Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon