Abstract: The present invention provides a method for measuring the PN-junction temperature of a light-emitting diode (LED), which uses a reference voltage to establish the function of current, real power, power factor, or driving-time interval on temperature. The initial and thermal-equilibrium values of current, real power, power factor, or driving-time interval are measured, and hence the variations thereof are calculated. Referring to the pre-established function, the temperature change is given. By the temperature change and the initial temperature, the PN-junction temperature of the LED is thereby deduced.

Abstract: The present invention provides a method for measuring the PN-junction temperature of a light-emitting diode (LED), which uses a reference voltage to establish the function of current, real power, power factor, or driving-time interval on temperature. The initial and thermal-equilibrium values of current, real power, power factor, or driving-time interval are measured, and hence the variations thereof are calculated. Referring to the pre-established function, the temperature change is given. By the temperature change and the initial temperature, the PN-junction temperature of the LED is thereby deduced.

Abstract: A method of measuring LED junction temperature includes the steps of: (a) obtaining a temperature curve of an LED; (b) inputting at least one rated AC voltage to the LED; (c) measuring a temperature at a specific point on an outer packaging structure of the LED, putting the temperature measured at the specific point into the temperature curve, and calculating a junction temperature of the LED by interpolation; and (d) substituting the result from the calculation in the step (c) into a numerical analysis model to obtain temperature oscillation of the LED.

Abstract: A structure of a submount for thermal package has a high heat dissipation and a low spreading thermal resistance. The submount has a specific ratio of height to side length.

Abstract: A heat shield and a crystal growth equipment are provided, in which the length-adjustable and hybrid-angle heat shield is provided for the crystal growth equipments. The heat shield is adapted for not only guiding the inert gas flow but also speeding up the flow rate of the gas and the cooling rate of the crystal so as to raise the axial temperature gradient at the solid-molten interface, the growth rate of the crystal and the productivity. The heat shield further can also reduce the possibility of microdefect nucleation to improve the quality of crystal at the same time. In addition, the length of heat shield can be adjusted according to the distance between the heat shield and the semiconductor material melt in different crucibles in case that the crucibles are made by different factories. This can reduce the cost of the heat shield manufacturing.

Abstract: A light emitting device is provided. The light emitting device includes a substrate, at least one light emitting chip and a first heat dissipation element. The substrate has a top surface and a bottom surface, and contacts are disposed on the top surface. The light emitting chip disposed on the top surface of the substrate is in contact with the contacts. The light emitting chip includes a light emitting layer, a positive electrode and a negative electrode. The light emitting layer is excited to emit a light by a current applied between the positive electrode and the negative electrode. The first heat dissipation element is disposed at the bottom surface of the substrate for transferring the heat generated by the light emitting chip out of the light emitting device, thus the operation temperature of the light emitting chip can be lowered.

Abstract: A heat shield and a crystal growth equipment are provided, in which the length-adjustable and hybrid-angle heat shield is provided for the crystal growth equipments. The heat shield is adapted for not only guiding the inert gas flow but also speeding up the flow rate of the gas and the cooling rate of the crystal so as to raise the axial temperature gradient at the solid-molten interface, the growth rate of the crystal and the productivity. The heat shield further can also reduce the possibility of microdefect nucleation to improve the quality of crystal at the same time. In addition, the length of heat shield can be adjusted according to the distance between the heat shield and the semiconductor material melt in different crucibles in case that the crucibles are made by different factories. This can reduce the cost of the heat shield manufacturing.