Patents by Inventor Faxian Xiu

Faxian Xiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Spin transistor having multiferroic gate dielectric
    Patent number: 8860006
    Abstract: A carrier-mediated magnetic phase change spin transistor is disclosed. In general, the spin transistor includes a Dilute Magnetic Semiconductor (DMS) channel and a gate stack formed on the DMS channel. The gate stack includes a multiferroic gate dielectric on the DMS channel, and a gate contact on a surface of the multiferroic gate dielectric opposite the DMS channel. The multiferroic gate dielectric is formed of a multiferroic material that exhibits a cross-coupling between magnetic and electric orders (i.e., magnetoelectric coupling), which in one embodiment is BiFeO3 (BFO). As a result, the multiferroic material layer enables an electrically modulated magnetic exchange bias that enhances paramagnetic to ferromagnetic switching of the DMS channel. The DMS channel is formed of a DMS material, which in one embodiment is Manganese Germanium (MnGe). In one embodiment, the DMS channel is a nanoscale DMS channel.
    Type: Grant
    Filed: March 25, 2011
    Date of Patent: October 14, 2014
    Assignee: The Regents of the University of California
    Inventors: Kang-Lung Wang, Ajey Poovannummoottil, Faxian Xiu
  • SPIN TRANSISTOR HAVING MULTIFERROIC GATE DIELECTRIC
    Publication number: 20110233524
    Abstract: A carrier-mediated magnetic phase change spin transistor is disclosed. In general, the spin transistor includes a Dilute Magnetic Semiconductor (DMS) channel and a gate stack formed on the DMS channel. The gate stack includes a multiferroic gate dielectric on the DMS channel, and a gate contact on a surface of the multiferroic gate dielectric opposite the DMS channel. The multiferroic gate dielectric is formed of a multiferroic material that exhibits a cross-coupling between magnetic and electric orders (i.e., magnetoelectric coupling), which in one embodiment is BiFeO3 (BFO). As a result, the multiferroic material layer enables an electrically modulated magnetic exchange bias that enhances paramagnetic to ferromagnetic switching of the DMS channel. The DMS channel is formed of a DMS material, which in one embodiment is Manganese Germanium (MnGe). In one embodiment, the DMS channel is a nanoscale DMS channel.
    Type: Application
    Filed: March 25, 2011
    Publication date: September 29, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Kang-Lung Wang, Ajey Poovannummoottil Jacob, Faxian Xiu