Abstract: A plasma processing chamber for depositing a film on an underside surface of a wafer, includes showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. An upper separator fin is disposed over a top surface of the showerhead pedestal and a lower separator fin is disposed under the top surface of the showerhead pedestal and aligned with the upper separator fin. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer. In another embodiment, a top surface of the showerhead pedestal may be configured to receive a masking plate instead of the upper separator fin. The masking plate is configured with a first area that has openings and a second area that is masked. The first areas is used to provide the process gas to a portion of the underside surface of the wafer for depositing a film.

Abstract: A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition.

Abstract: Multi-station processing tools with station-varying support features for backside processing are provided. The support features in a first station may hold a wafer at a first set of points during backside deposition, blocking backside deposition, etching, or other processing at those points. The support features in a second station may hold a wafer at a second set of points that don’t overlap with the first set of points.

Abstract: A carrier wafer for receiving a wafer and supporting the wafer during semiconductor processing operations. The carrier wafer includes an annular ring surface and a pocket, the pocket being defined in a center of the carrier wafer and including a step defined by a sidewall extending between the annular ring surface and a top surface of the pocket.

Abstract: A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition.

Abstract: Carrier rings with radially-varied plasma impedance are provided herein. In some embodiments, a carrier ring may include an outer ring that holds a removable inner ring. The outer ring may be formed of a dielectric material such as ceramic. The inner ring may be formed of a metal such as aluminum to provide a desired impedance. In some other embodiments, a carrier ring is formed from a single piece with radially-varying impedances.

Abstract: A chamber for use in implementing a deposition process includes a pedestal for supporting a semiconductor wafer. A silicon ring is disposed over the pedestal and surrounds the semiconductor wafer. The silicon ring has a ring thickness that approximates a semiconductor wafer thickness. The silicon ring has an annular width that extends a process zone defined over the semiconductor wafer to an extended process zone that is defined over the semiconductor wafer and the silicon ring. A confinement ring defined from a dielectric material is disposed over the pedestal and surrounds the silicon ring. A showerhead having a central showerhead area and an extended showerhead area is also included. The central showerhead area is substantially disposed over the semiconductor wafer and the silicon ring. The extended showerhead area is substantially disposed over the confinement ring.

Abstract: A method of controlling wafer bow in an integrated circuit fabrication process may include characterizing the wafer bow in response to performing one or more first fabrication processes to an active side of an integrated circuit wafer. Determining one or more second fabrication processes, to be applied to a back side of the integrated circuit wafer, to bring the wafer bow to below a predetermined threshold based on the one or more first fabrication processes the method may additionally include performing the one or more second fabrication processes on the back side of the integrated circuit wafer.

Abstract: Localized stresses can be modulated in a film deposited on a bowed semiconductor substrate by selectively and locally curing the film by ultraviolet (UV) radiation. A bowed semiconductor substrate can be asymmetrically bowed. A UV-curable film is deposited on the front side or the backside of the bowed semiconductor substrate. A mask is provided between the UV-curable film and a UV source, where openings in the mask are patterned to selectively define exposed regions and non-exposed regions of the UV-curable film. Exposed regions of the UV-curable film modulate localized stresses to mitigate bowing in the bowed semiconductor substrate.

Abstract: A plasma processing chamber for depositing a film on an underside surface of a wafer, includes showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. An upper separator fin is disposed over a top surface of the showerhead pedestal and a lower separator fin is disposed under the top surface of the showerhead pedestal and aligned with the upper separator fin. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer. In another embodiment, a top surface of the showerhead pedestal may be configured to receive a masking plate instead of the upper separator fin. The masking plate is configured with a first area that has openings and a second area that is masked. The first areas is used to provide the process gas to a portion of the underside surface of the wafer for depositing a film.

Abstract: A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition.

Abstract: A processing chamber includes: a lower portion; an upper portion that covers the lower portion; a pedestal that is located within the lower portion, to vertically support a substrate above a top surface of the pedestal to distribute a precursor between the top surface and a first surface of the substrate, the pedestal configured to be electrically connected to one of a ground potential and a radio frequency potential; a grid that is coupled to the upper portion and that is configured to be electrically connected to the other one of the ground potential and the radio frequency potential; a window that covers an opening in the upper portion; and an infrared light source configured to transmit infrared light through the window and the grid to a second surface of the substrate. The second surface of the substrate is opposite the first surface of the substrate.

Abstract: A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition.

Abstract: A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition.

Abstract: A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition.

Abstract: A method for processing a substrate in a plasma processing system having a showerhead and a shower-pedestal oriented below the showerhead is provided. The method includes supporting the substrate between the showerhead and the shower-pedestal. The substrate is supported to be spaced apart from the shower-pedestal and the shower head. The method includes flowing a process gas out of the shower-pedestal in a direction that is toward a backside of the substrate, and flowing an inert gas out of the showerhead in a direction that is toward a topside of the substrate. The method includes generating a plasma, using the process gas, between the shower-pedestal and the backside of the substrate. The plasma is configured to deposit a film on said backside of the substrate and the inert gas is configured to prevent or reduce deposition on said topside of the substrate.

Abstract: Methods for reducing warpage of bowed semiconductor substrates, particularly saddle-shaped bowed semiconductor substrates, are provided herein. Methods involve depositing a bow compensation layer by plasma enhanced chemical vapor deposition on the backside of the bowed semiconductor substrate by region, such as by quadrants, to form a compressive film on a tensile substrate and a tensile film on a compressive substrate. Methods involve flowing different gases from different nozzles on a surface of a showerhead to deliver various gases by region in a one-step operation or flowing gases in a multi-step process by shielding regions of the showerhead during delivery of gases to deliver specific gases from non-shielded regions onto regions of the bowed semiconductor substrate by alternating between rotating the semiconductor substrate and flowing gases to the backside of the bowed semiconductor substrate.

Abstract: A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition.

Abstract: A chamber for use in implementing a deposition process includes a pedestal for supporting a semiconductor wafer. A silicon ring is disposed over the pedestal and surrounds the semiconductor wafer. The silicon ring has a ring thickness that approximates a semiconductor wafer thickness. The silicon ring has an annular width that extends a process zone defined over the semiconductor wafer to an extended process zone that is defined over the semiconductor wafer and the silicon ring. A confinement ring defined from a dielectric material is disposed over the pedestal and surrounds the silicon ring. A showerhead having a central showerhead area and an extended showerhead area is also included. The central showerhead area is substantially disposed over the semiconductor wafer and the silicon ring. The extended showerhead area is substantially disposed over the confinement ring.

Abstract: Methods for reducing warpage of bowed semiconductor substrates, particularly saddle-shaped bowed semiconductor substrates, are provided herein. Methods involve depositing a bow compensation layer by plasma enhanced chemical vapor deposition on the backside of the bowed semiconductor substrate by region, such as by quadrants, to form a compressive film on a tensile substrate and a tensile film on a compressive substrate. Methods involve flowing different gases from different nozzles on a surface of a showerhead to deliver various gases by region in a one-step operation or flowing gases in a multi-step process by shielding regions of the showerhead during delivery of gases to deliver specific gases from non-shielded regions onto regions of the bowed semiconductor substrate by alternating between rotating the semiconductor substrate and flowing gases to the backside of the bowed semiconductor substrate.