Abstract: The present disclosure provides a fixed-position defect doping method for a micro-nanostructure based on a self-alignment process, including: S1, sequentially forming a sacrificial layer and a photoresist layer on a surface of a crystal substrate; S2, performing a lithography on the photoresist layer to form a mask hole according to a micro-nano pattern; S3, performing an isotropic etching on the sacrificial layer through the mask hole, and amplifying the micro-nano pattern to the sacrificial layer; S4, performing an ion implantation doping on an exposed crystal surface below the mask hole; S5, removing the photoresist layer, and depositing a mask material; S6, removing the sacrificial layer, and transferring a micro-nano amplified pattern in the sacrificial layer to a mask material pattern; and S7, etching an exposed crystal surface, and removing the mask material on the surface and forming a specific defect by annealing.

Abstract: A method of forming a three-dimensional (3D) NAND memory device includes: forming a gate line slit through a plurality of alternating layers of an oxide layer and a conductive material layer, where the conductive material layer is further formed on a sidewall and a bottom of the gate line slit; performing an ion implantation process to dope at least a portion of the conductive material layer that is on the bottom and/or a portion of the sidewall of the gate line slit; and performing an etch process in the gate line slit to remove the conductive material layer that is weakened by the ion implantation process.

Abstract: The present invention discloses a method for refining large-particle-size pure copper or copper alloy particles by high-energy ball milling, the method comprising the following steps: (1) using large-particle-size pure copper or copper alloy coarse particles as a raw material and cyclohexane or water as a process control agent, and crushing and refining the particles by high-energy ball milling to obtain small-particle-size copper or copper alloy powder; and (2) decreasing an oxygen content in the powder obtained in step (1) in a reducing atmosphere to obtain pure copper or copper alloy powder. In the present invention, by improving the overall process flow of the preparation method and the parameter conditions of each process step, the method greatly decreases energy consumption compared with existing copper powder preparation techniques. In addition, the method features a simple process and low production costs.