Abstract: Field effect transistors (FET) including quantum layers. A FET may include a substrate, and an oxide layer disposed over the substrate. The oxide layer may include a first section and a second section positioned adjacent the first section. The FET may also include a first quantum layer disposed over the first section of the oxide layer, and a second quantum layer disposed over the second section of the oxide layer, and a first segment of the first quantum layer. Additionally, the FET may include a drain region disposed directly over a second segment the first quantum layer. The second segment of the first quantum layer may be positioned adjacent the first segment of the first quantum layer. The FET may further include a source region disposed over the second quantum layer, and a channel region formed over the second quantum layer, between the drain region and the source region.

Abstract: Methods and systems for techniques for determining transmission configuration indicator (TCI) states are disclosed. In an implementation, a method of wireless communication includes receiving, by a wireless device, at least one of a first transmission configuration indicator (TCI) state for a first direction transmission or a second TCI state for a second direction transmission, determining, by the wireless device, an indicated TCI state based on the first TCI state for a certain second direction transmission, and performing, by the wireless device, the certain second direction transmission according to the indicated TCI state.

Abstract: Disclosed are a self-locking folding bracket and a folding chair. The self-locking folding bracket includes two symmetrical foldable side supporting structures and a linkage assembly connected between the two side supporting structures, the linkage assembly includes two groups of side rods, two groups of cross rods and two groups of connecting rods, the cross rod and the connecting rod have an extreme position in the rotation process, the linkage assembly has a working state that passes down the extreme position so that the cross rod is abutted to the side rod, a folding state that the cross rod passes up the extreme position to leave the side rod, when the linkage assembly is in the working state, the linkage assembly is unfolded and able to maintain a distance between the two side supporting structures.

Abstract: The present invention discloses a temperature control method and a system for a blade shaft of an ultrasonic scalpel based on a temperature distribution function model. The system includes the blade shaft of the ultrasonic scalpel and a transducer that are coupled to each other, and is connected to a generator through a cable. When the blade shaft of the ultrasonic scalpel works, actual temperature of the blade shaft is distributed along a one-dimensional space of the blade shaft. The temperature distribution on the blade shaft is determined by a set of the real-time working feedback parameter, the physical structure feature parameter, and the surrounding environmental parameter of the blade shaft. Each temperature distribution corresponds to a solution of the temperature distribution function, and the function can be approximated by a machine leaning algorithm.

Abstract: This application discloses a sensing method and apparatus, a terminal, and a network device, and pertains to the field of communication technologies. The sensing method in embodiments of this application includes: determining, by a terminal, a measurement quantity for a sensing signal; and performing, by the terminal, detection on the sensing signal and obtaining a measured value corresponding to the measurement quantity; where the sensing signal is sent by a first network device, and the first network device is a base station.

Abstract: A sensing method, an apparatus, and a network device, and pertains to the technical field of communication. The sensing method of the embodiments of this application includes: sending, by a first network device, a sensing signal; and detecting, by the first network device, an echo of the sensing signal based on a measurement quantity of the sensing signal, and obtaining a measurement value corresponding to the measurement quantity.

Abstract: A sensing method and apparatus, and a network device. The sensing method in embodiments of this application includes: determining, by a first network device, a measurement quantity of a sensing signal; and detecting, by the first network device, the sensing signal to obtain a measurement value corresponding to the measurement quantity, where the sensing signal is sent by a second network device, and the first network device and the second network device are different base stations.

Abstract: An optical device and the prism module thereof are provided. The prism module includes a first prism, a second prism, and a third prism. The second prism is disposed beside the first prism. The third prism is adhered to the second prism. First light enters the first prism, is reflected plural times in the first prism, enters the second prism, and is emitted from the second prism. Second light enters the second prism, is reflected plural times in the second prism, and is emitted from the second prism. Third light sequentially passes through the third prism and the second prism, enters the first prism, is reflected plural times in the first prism, and is emitted from the first prism.

Abstract: A miter saw has a base having a detent notch, a table rotatably connectable to the base, a pivoting assembly connected to the table, and a saw assembly supported by the pivoting assembly. The saw assembly has a blade movable downwardly for a cutting operation. A locking mechanism is disposed on the table. The locking mechanism is movable between an unlocked position and a locked position for selectively unlocking and locking the table for rotational movement relative to the base about the miter axis. The locking mechanism has a lock lever rotatably connected to the table. The lock lever has a handle for moving locking mechanism between the locked and unlocked positions. The saw also has a miter detent assembly for selectively engaging and disengaging the detent notch.

Abstract: Disclosed a method for predicting permeability of a multi-mineral phase digital core based on deep learning. In the present disclosure, a three-dimensional digital core is constructed and a pore structure is randomly generated; after a plurality of multi-mineral digital core images is acquired by performing image segmentation on the three-dimensional digital core, permeability corresponding to each of the multi-mineral digital core images is acquired by simulation using multi-physics field simulation software and a multi-mineral digital core data set is constructed based on the plurality of multi-mineral digital core images and the permeability corresponding to each of the multi-mineral digital core images; an SE-ResNet18 convolutional neural network is constructed and trained with the multi-mineral digital core data set; and an image of a multi-mineral core to be predicted is input into the trained SE-ResNet18 convolutional neural network to determine the permeability of the multi-mineral core.

Abstract: A message transmission method includes receiving, by a second device, a first message sent by a first device. The first message indicates at least one of the following: a sensing resolution related requirement; a sensing distance related requirement; a sensing area related requirement; a sensing object related requirement; a sensing error related requirement; a sensing signal quality related requirement; or a sensing delay related requirement.

Abstract: A vaneless contra-rotating compressor with multiple contra-rotating interfaces and application of the vaneless contra-rotating compressor is provided, which includes at least two vaneless contra-rotating interfaces. For each of the at least two contra-rotating interfaces, the contra-rotating interface corresponds to two of vaneless contra-rotating rotors. A rotating direction of an upstream rotor of the two vaneless contra-rotating rotors and a rotating direction of a downstream rotor of the two vaneless contra-rotating rotors are opposite. Rectifier stator vanes are not provided among all the rotors to supply sufficient inlet negative pre-swirl for the downstream rotors through the upstream rotors. Only the outlet guide vanes of the last stage, of the vaneless contra-rotating rotors are provided. The number of stages and the number of vaneless contra-rotating interfaces may be set flexibly according to the actual pressurization requirements.

Abstract: Disclosed a transient voltage suppressor and a method for manufacturing the same. According to the transient voltage suppressor, an additional gate stack layer is introduced based on the prior transient voltage suppressor, and the diffusion isolation regions are reused as the conductive vias, so that, the gate stack layer, the first doped region, the conductive vias, and the second semiconductor layer constitute a MOS transistor being coupled in parallel to the Zener diode or the avalanche diode of the transient voltage suppressor. When the current of the I/O terminal is relatively large, the MOS transistor is turned on to share part of the current of the I/O terminal through the Zener diode or the avalanche diode, thereby protecting the Zener diode or the avalanche diode from being damaged due to excessive current. Thus, the robustness of the transient voltage suppressor is improved without increasing the manufacture cost.

Abstract: Disclosed is a vertical device, an ESD protection device having the vertical device, and a method for manufacturing the vertical device. The vertical device includes a forward diode which is formed by a semiconductor substrate and an epitaxial semiconductor layer, and a reverse Schottky barrier between an anode metal and the epitaxial semiconductor layer. The vertical device has a vertical current path from a second electrode to a first electrode, and a lateral current distribution at least partially surrounded and limited by the reverse Schottky barrier. The reverse Schottky barrier reduces the parasitic capacitance of the diode at high voltages, thereby increasing the response speed of the ESD protection device at high voltages.

Abstract: Field effect transistors (FET) including quantum layers. A FET may include a substrate, and an oxide layer disposed over the substrate. The oxide layer may include a first section and a second section positioned adjacent the first section. The FET may also include a first quantum layer disposed over the first section of the oxide layer, and a second quantum layer disposed over the second section of the oxide layer, and a first segment of the first quantum layer. Additionally, the FET may include a drain region disposed directly over a second segment the first quantum layer. The second segment of the first quantum layer may be positioned adjacent the first segment of the first quantum layer. The FET may further include a source region disposed over the second quantum layer, and a channel region formed over the second quantum layer, between the drain region and the source region.

Abstract: Disclosed a transient voltage suppressor and a method for manufacturing the same. According to the transient voltage suppressor, an additional gate stack layer is introduced based on the prior transient voltage suppressor, and the diffusion isolation regions are reused as the conductive vias, so that, the gate stack layer, the first doped region, the conductive vias, and the second semiconductor layer constitute a MOS transistor being coupled in parallel to the Zener diode or the avalanche diode of the transient voltage suppressor. When the current of the I/O terminal is relatively large, the MOS transistor is turned on to share part of the current of the I/O terminal through the Zener diode or the avalanche diode, thereby protecting the Zener diode or the avalanche diode from being damaged due to excessive current. Thus, the robustness of the transient voltage suppressor is improved without increasing the manufacture cost.

Abstract: Disclosed a transient voltage suppressor and a method for manufacturing the same. According to the transient voltage suppressor, an additional gate stack layer is introduced based on the prior transient voltage suppressor, and the diffusion isolation regions are reused as the conductive vias, so that, the gate stack layer, the first doped region, the conductive vias, and the second semiconductor layer constitute a MOS transistor being coupled in parallel to the Zener diode or the avalanche diode of the transient voltage suppressor. When the current of the I/O terminal is relatively large, the MOS transistor is turned on to share part of the current of the I/O terminal through the Zener diode or the avalanche diode, thereby protecting the Zener diode or the avalanche diode from being damaged due to excessive current. Thus, the robustness of the transient voltage suppressor is improved without increasing the manufacture cost.

Abstract: The present invention provides a crystal form of a renal outer medullary potassium channel inhibitor and a preparation method thereof. In particular, the present invention provides crystal form III of a L-tartrate of a renal outer medullary potassium channel (ROMK) inhibitor (I) and a preparation method thereof. The crystal form III has good chemical stability and crystal form stability, and the crystallization solvent used has low toxicity and residue. Thus, the present invention can be better used in clinical treatment.

Abstract: There is provided a microcatheter with a tapering wall thickness shaft having varying stiffness/flexibility along its length from proximal end near the medical practitioner to the distal end near the target site in the patient, such as with at least three segments. The shaft is prepared of a thermoplastic material having varying composition along its length. The distal end may be shaped according to the required use just prior to the medical procedure. The microcatheter is particularly adapted for the delivery of microspheric compositions for treatment of tumors or fibroids by embolization of peripheral blood vessels of the tumor or fibroid.

Abstract: Disclosed is a rectification device, a method for manufacturing the same and an ESD protection device. The rectification device comprises: a semiconductor substrate with a doping type of P-type; an epitaxial semiconductor layer with a doping type of N-type and located on the semiconductor substrate; a first doped region with a doping type of N-type and located in the epitaxial semiconductor layer; wherein the semiconductor substrate and the epitaxial semiconductor layer are respectively used as an anode and a cathode of the rectification device, and the rectification device further comprises a reverse Schottky barrier being formed in the cathode. According to the disclosure, a reverse Schottky barrier is formed to reduce the parasitic capacitance of the diode at high voltages, thereby increasing the response speed of the ESD protection device at high voltages.