Patents by Inventor Felix Kozakevich
Felix Kozakevich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8222155Abstract: A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.Type: GrantFiled: January 4, 2008Date of Patent: July 17, 2012Assignee: Lam Research CorporationInventors: Kenji Takeshita, Odette Turmel, Felix Kozakevich, Eric Hudson
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Patent number: 8000082Abstract: An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.Type: GrantFiled: March 17, 2009Date of Patent: August 16, 2011Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Eric Lenz, Lumin Li, Felix Kozakevich
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Patent number: 7749353Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.Type: GrantFiled: September 21, 2006Date of Patent: July 6, 2010Assignee: Lam Research CorporationInventors: Camelia Rusu, Rajinder Dhindsa, Eric A. Hudson, Mukund Srinivasan, Lumin Li, Felix Kozakevich
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Publication number: 20100126847Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.Type: ApplicationFiled: January 29, 2010Publication date: May 27, 2010Applicant: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Lumin Li, Dave Trussell
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Patent number: 7683289Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.Type: GrantFiled: December 16, 2005Date of Patent: March 23, 2010Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Lumin Li, Dave Trussell
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Publication number: 20090174983Abstract: An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.Type: ApplicationFiled: March 17, 2009Publication date: July 9, 2009Applicant: Lam Research CorporationInventors: Rajinder Dhindsa, Eric Lenz, Lumin Li, Felix Kozakevich
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Patent number: 7525787Abstract: An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.Type: GrantFiled: September 30, 2005Date of Patent: April 28, 2009Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Eric Lenz, Lumin Li, Felix Kozakevich
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Patent number: 7521362Abstract: A method in a plasma processing system for etching a feature through a dielectric layer of a dual damascene stack on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method further includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the dielectric layer. The method additionally includes striking a plasma from the etchant source gas. The method also includes etching the feature through the dielectric layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 27 MHz and about 90 MHz. The bias RF signal further has a bias RF power component that is configured to cause the feature to be etched in accordance to predefined etch rate parameters and etch profile parameters at the bias RF frequency.Type: GrantFiled: December 23, 2003Date of Patent: April 21, 2009Assignee: LAM Research CorporationInventors: Kenji Takeshita, Odette Turmel, Felix Kozakevich, Eric Hudson
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Publication number: 20080318433Abstract: Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.Type: ApplicationFiled: August 26, 2008Publication date: December 25, 2008Applicant: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, James H. Rogers, David Trussell
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Patent number: 7430986Abstract: Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.Type: GrantFiled: March 18, 2005Date of Patent: October 7, 2008Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, James H. Rogers, David Trussell
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Patent number: 7405521Abstract: A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.Type: GrantFiled: August 22, 2003Date of Patent: July 29, 2008Assignee: Lam Research CorporationInventors: Raj Dhindsa, S. M. Reza Sadjadi, Felix Kozakevich, Dave Trussell, Lumin Li, Eric Lenz, Camelia Rusu, Mukund Srinivasan, Aaron Eppler, Jim Tietz, Jeffrey Marks
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Patent number: 7393432Abstract: An arrangement in a plasma processing system for selectively providing an RF grounding path between an electrode and ground. The arrangement includes an RF conduction path structure and an annular structure. The annular structure and the RF conduction path structure having two relative positions relative to one another. A first relative position of the two relative positions is characterized by the annular structure electrically coupling with the RF conduction path structure to provide a ground to the RF conduction path structure. A second relative position of the two relative positions is characterized by the annular structure being electrically uncoupled from the RF conduction path.Type: GrantFiled: September 29, 2004Date of Patent: July 1, 2008Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Eric Lenz, Russell Martin
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Publication number: 20080113516Abstract: A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.Type: ApplicationFiled: January 4, 2008Publication date: May 15, 2008Inventors: Kenji Takeshita, Odette Turmel, Felix Kozakevich, Eric Hudson
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Patent number: 7276135Abstract: A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.Type: GrantFiled: May 28, 2004Date of Patent: October 2, 2007Assignee: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Dave Trussell
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Publication number: 20070141729Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.Type: ApplicationFiled: December 16, 2005Publication date: June 21, 2007Applicant: Lam Research CorporationInventors: Rajinder Dhindsa, Felix Kozakevich, Lumin Li, Dave Trussell
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Publication number: 20070076346Abstract: An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity is located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.Type: ApplicationFiled: September 30, 2005Publication date: April 5, 2007Inventors: Rajinder Dhindsa, Eric Lenz, Lumin Li, Felix Kozakevich
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Patent number: 7169256Abstract: A plasma processor processing a workpiece includes sources having frequencies 2 MHz, 27 MHz, and 60 MHz, applied by three matching networks to an electrode in a vacuum chamber including the workpiece. Alternatively 60 MHz is applied to a second electrode by a fourth matching network. The matching networks, substantially tuned to the frequencies of the sources driving them, include series inductances so the 2 MHz inductance exceeds the 27 MHz network inductance, and the 27 MHz network inductance exceeds the inductances of the 60 MHz networks. The matching networks attenuate by at least 26 DB the frequencies of the sources that do not drive them. Shunt inductors between the 27 and 60 MHz sources decouple 2 MHz from the 27 and 60 MHz sources. A series resonant circuit (resonant to about 5 MHz) shunts the 2 MHz network and the electrode to help match the 2 MHz source to the electrode.Type: GrantFiled: May 28, 2004Date of Patent: January 30, 2007Assignee: LAM Research CorporationInventors: Raj Dhindsa, Felix Kozakevich, David Douglas Trussell
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Publication number: 20070012659Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.Type: ApplicationFiled: September 21, 2006Publication date: January 18, 2007Inventors: Camelia Rusu, Rajinder Dhindsa, Eric Hudson, Mukund Srinivasan, Lumin Li, Felix Kozakevich
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Patent number: 7144521Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.Type: GrantFiled: December 15, 2003Date of Patent: December 5, 2006Assignee: Lam Research CorporationInventors: Camelia Rusu, Rajinder Dhindsa, Eric A. Hudson, Mukund Srinivasan, Lumin Li, Felix Kozakevich
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Publication number: 20060207502Abstract: Plasma confinement ring assemblies are provided that include confinement rings adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to avoid polymer deposition on those surfaces. The plasma confinement rings include thermal chokes adapted to localize heating at selected portions of the rings that include the plasma exposed surfaces. The thermal chokes reduce heat conduction from those portions to other portions of the rings, which causes selected portions of the rings to reach desired temperatures during plasma processing.Type: ApplicationFiled: March 18, 2005Publication date: September 21, 2006Inventors: Rajinder Dhindsa, Felix Kozakevich, James Rogers