Abstract: A method for forming a package structure is provided. The method includes disposing a semiconductor die over a carrier substrate, wherein a removable film is formed over the semiconductor die, disposing a first stacked die package structure over the carrier substrate, wherein a top surface of the removable film is higher than a top surface of the first stacked die package structure, and removing the removable film to expose a top surface of the semiconductor die, wherein a top surface of the semiconductor die is lower than the top surface of the first stacked die package structure.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a package substrate, a semiconductor chip disposed over the package substrate, and an integrated device located below and bonded to the lower surface of the semiconductor chip. The semiconductor chip has a lower surface facing the package substrate and is electrically connected to the package substrate through conductive structures. The integrated device is laterally surrounded by the conductive structures, and the integrated device and the conductive structures are located within boundaries of the semiconductor chip when viewed in a direction perpendicular to the lower surface of the semiconductor chip.

Abstract: A method includes: bonding a plurality of interposer dies to a first redistribution layer (RDL), each of the interposer dies comprising a substrate and a second RDL below the substrate; encapsulating the first RDL and the interposer dies; reducing a thickness of the substrate of each of the interposer dies; and electrically coupling the interposer dies to a first semiconductor die.

Abstract: A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.

Abstract: A semiconductor structure, comprising a redistribution layer (RDL) including a dielectric layer and a conductive trace within the dielectric layer; a first conductive member disposed over the RDL and electrically connected with the conductive trace; a second conductive member disposed over the RDL and electrically connected with the conductive trace; a first die disposed over the RDL; a second die disposed over the first die, the first conductive member and the second conductive member; and a connector disposed between the second die and the second conductive member to electrically connect the second die with the conductive trace, wherein the first conductive member is electrically isolated from the second die.

Abstract: Provided is a package structure including a die, a through via, an encapsulant, a warpage controlling layer, and a cap. The through via is laterally aside the die. The encapsulant laterally encapsulates the through via and the die. The warpage controlling layer covers the encapsulant and the die. The cap is laterally aside the warpage controlling layer and on the through via. The cap has a top surface higher than a top surface of the encapsulant and lower than a top surface of the warpage controlling layer.

Abstract: A method for forming a package structure is provided, including forming an interconnect structure over a carrier substrate and forming a semiconductor die over a first side of the interconnect structure. A removable film is formed over the semiconductor die. The method includes forming a first stacked die package structure over the first side of the interconnect structure. A top surface of the removable film is higher than a top surface of the first stacked die package structure. The method includes forming a package layer, removing a portion of the package layer to expose a portion of the removable film, removing the removable film to form a recess, forming a lid structure over the semiconductor die and the first stacked die package structure. The lid structure has a main portion and a protruding portion disposed in the recess and extending from the main portion.

Abstract: A solar cell substrate with thin film polysilicon. The solar cell substrate includes a substrate; a transparent conductive layer, formed on the substrate; a thermal isolation layer having inlaid conductive layers, formed on the transparent conductive layer; and a polysilicon layer, formed on the thermal isolation layer.

Abstract: A solar cell substrate with thin film polysilicon. The solar cell substrate includes a substrate; a transparent conductive layer, formed on the substrate; a thermal isolation layer having inlaid conductive layers, formed on the transparent conductive layer; and a polysilicon layer, formed on the thermal isolation layer.