Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a boundary deep trench isolation (BDTI) structure disposed at boundary regions of a pixel region surrounding a photodiode. The BDTI structure has a ring shape from a top view and two columns surrounding the photodiode with the first depth from a cross-sectional view. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel region overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view. The MDTI structure is a continuous integral unit having a ring shape.

Abstract: A semiconductor structure includes a first device and a second device. The first device includes: a first gate structure formed over an active region and a first air spacer disposed adjacent to the first gate structure. The second device includes: a second gate structure formed over an isolation structure and a second air spacer disposed adjacent to the second gate structure. The first air spacer and the second air spacer have different sizes.

Abstract: A method of manufacturing an image sensor structure includes forming an isolation structure in a substrate to divide the substrate into a first region and a second region, forming a first light sensing region in the first region and a second light sensing region in the second region, forming a first gate structure over the first light sensing region and a second gate structure over the second light sensing region, forming gate spacers on sidewalls of the first and second gate structures, and depositing a blocking layer on sidewalls of the gate spacers. The blocking layer has an opening positioned between the first and second gate structures. A source/drain structure is formed directly under the opening in the blocking layer. The method also includes forming an interlayer dielectric layer over the first and second gate structures and the blocking layer.

Abstract: An image-sensor device is provided. The image-sensor device includes a semiconductor substrate and a radiation-sensing region in the semiconductor substrate. The image-sensor device also includes a doped isolation region in the semiconductor substrate and a dielectric film extending into the doped isolation region from a surface of the semiconductor substrate. A portion of the doped isolation region is between the dielectric film and the radiation-sensing region.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: A pharmaceutical composition including 2-hydroxy-N—[3-(trifluoromethyl)phenyl]benzamide and used for treatment of osteoarthritis is revealed. The pharmaceutical composition inhibits tumor necrosis factor (TNF) induced interferon regulatory factor (IRF). The activated IRF stimulates chondrocytes to secret matrix metalloproteinases, inducible nitric oxide synthase (iNOS), aggrecanases, etc. This leads to loss of collagen II and further causes degradation of proteoglycan. By suppression of signaling pathways of interferon regulatory factor, symptoms are relieved and osteoarthritis is treated.

Abstract: A memory management apparatus and a related method thereof for accessing digital versatile disc(DVD) data stored in a memory device are disclosed. The memory management apparatus includes an address mapping module, coupled to a bus, for receiving a logic address from the bus and for generating a physical address according to the logic address, and an access control module, coupled to the address mapping module and the memory device, for accessing the digital versatile disc data according to the physical address.

Abstract: A memory management apparatus and a related method thereof for accessing digital versatile disc(DVD)data stored in a memory device are disclosed. The memory management apparatus includes an address mapping module, coupled to a bus, for receiving a logic address from the bus and for generating a physical address according to the logic address, and an access control module, coupled to the address mapping module and the memory device, for accessing the digital versatile disc data according to the physical address.