Abstract: This application provides a mobility management method and a communication apparatus. The method includes: A first DU receives a first measurement result reported by a terminal device, determines, based on the first measurement result, target beam information for the terminal device to perform mobility management and/or a target cell corresponding to the target beam information, notifies a CU of the target beam information and/or the target cell, and requests, through the CU, a second DU to confirm whether to accept the target beam information and/or the target cell. The first measurement result includes measurement results corresponding to a current serving cell of the terminal device and at least one non-serving cell of the terminal device.

Abstract: The present disclosure provides a tray assembly having a dual-structure. The tray assembly comprises an upper tray and a lower tray. The lower tray is capable of being easily disengaged from the upper tray by use of a dovetail joint that allows the lower tray to slidably move relative to the upper tray. The tray assembly also utilizes magnets to reduce the use of mechanical joints. The combination of the magnets together with the dovetail joint provides a quick and efficient way of sliding the lower tray in and out from the upper tray. The lower tray having a collection region collects any external, foreign materials generated during a chemical mechanical polishing/planarizing process. After the cleaning process, the lower tray can be slid back into the upper tray for use.

Abstract: Embodiments of the present invention disclose a communication method, a source base station, a target base station, a core network device, and a terminal device, where the method includes: sending, by a source base station, a handover request to a target base station, where the handover request is used to request to hand over a session of a terminal device from the source base station to the target base station, and the handover request includes an identifier of a session requested to be handed over and indication information of a network slice corresponding to the session; and receiving, by the source base station, a handover response message from the target base station.

Abstract: The present disclosure provides to a processing device and a processing method for a ray tracing acceleration structure. The processing device includes a machine-readable storage medium and a processor. The processor executes a descriptor to simulate the interaction between the ray with the scene, and the descriptor includes a first pointer and a second pointer. The processor obtains the TLAS by using the first pointer. The processor traverses the TLAS to find a leaf node in the TLAS that intersects the ray, and the intersected leaf node includes an instance identifier. The processor obtains the intersected instance record from the instance buffer pointed to by the second pointer by using the instance identifier, and the intersected instance record includes a third pointer. The processor obtains the BLAS by using the third pointer. The processor traverses the BLAS to find a primitive node in the BLAS that intersects the ray.

Abstract: Embodiments of the present invention provide a communication method, an access network device, a core network device, and user equipment. The method includes: receiving, by an access network device, first information sent by a core network device, where the first information includes information about a cell that supports a network slice instance and that allows or does not allow user equipment to access; and sending, by the access network device, the first information to the user equipment. In the foregoing process, the user equipment may obtain the information about a cell that supports a network slice instance and that allows or does not allow the user equipment to access, to aware the network slice instance.

Abstract: An integrated circuit includes an oxide layer over a substrate; a layer of semiconductor material over the oxide layer and which includes a P-well, an N-well, and a channel of a transistor; and a thermal substrate contact extending through the layer of semiconductor material and the oxide layer, and against a top surface of the substrate. A thermal substrate contact increases the ability to remove heat produced from the integrated circuit transistors out of the integrated circuit. A thermal substrate contact which traverses the oxide layer over a substrate provides a secondary path for heat out of an integrated circuit (or, alternatively, out of a substrate through the integrated circuit) to cool the integrated circuit.

Abstract: A method of making a semiconductor device includes manufacturing a bias layer over a buried oxide layer. The method further includes growing a layer of semiconductor material over the bias layer. The method further includes forming a transistor in the layer of semiconductor material, wherein the bias layer is between the transistor and a substrate. The method further includes forming a first deep trench isolation structure (DTI) extending through the layer of semiconductor material and contacting the substrate. The method further includes forming a first bias contact extending through the layer of the semiconductor material and electrically connecting to the bias layer. The method further includes forming a contact extending through the DTI to contact the substrate, wherein the contact is separated from the bias layer.

Abstract: An integrated circuit comprising an n-type drift region, a gate structure directly on a first portion of the n-type drift region, a drain structure formed in a second portion of the n-type drift region, the gate structure and the drain structure being separated by a drift region length, a resist protective oxide (RPO) formed over a portion of the n-type drift region between the gate structure and the drain structure, a field plate contact providing a direct electrical connection to the resist protective oxide.

Abstract: A telescopic ventilation pipeline device for a coal storage Eurosilo includes a second fan, an upper air pipe fixing interface, a telescopic air pipe, a bottom air pipe fixing interface, a mounting platform, and a ventilation air pipe, the telescopic air pipe being parallel to a central telescopic feed pipe of the Eurosilo, one end of the upper air pipe fixing interface being connected to the second fan, the other end thereof communicating with the top end of the telescopic air pipe, the bottom end of the telescopic air pipe, the bottom air pipe fixing interface and the ventilation air pipe communicating in sequence, and the bottom air pipe fixing interface being fixed to a spiral framework A-type frame of the Eurosilo. Compared with the prior art, the telescopic ventilation pipeline device is high in safety and ventilation efficiency and incapable of affecting the normal operation of the Eurosilo.

Abstract: A system service detects a first trigger event of a target application, loads an application program of the target application in response to the first trigger event, and transmits a communication address to the application program. The application program performs preloading, and waits to receive a message based on the communication address. The system service detects a second trigger event of the target application. The system service generates a startup instruction in response to the second trigger event of the target application, and sends the startup instruction to the application program. The application program receives the startup instruction by using the communication address, and starts the target application in response to the startup instruction.

Abstract: A super junction structure includes a substrate, wherein the substrate has a first conductivity type. The super junction structure includes an epitaxial layer over the substrate, wherein the epitaxial layer has a second conductivity type opposite the first conductivity type. The super junction structure further includes a bury layer between the epitaxial layer and the substrate, wherein the bury layer has the second conductivity type. The super junction structure further includes a conductive pillar in the epitaxial layer, wherein the conductive pillar has the first conductivity type, sidewalls of the conductive pillar are angled with respect to a top-most surface of the epitaxial layer, a bottom surface of the conductive pillar is rounded, and a top-most surface of the conductive pillar is coplanar with the top-most surface of the epitaxial layer.

Abstract: An integrated circuit includes a substrate and a semiconductor material layer over the substrate. The integrated circuit includes a first source structure in the semiconductor material layer. The first source structure includes a first doped well. The integrated circuit includes a drain structure in the semiconductor material layer. The drain structure includes a second doped well. The integrated circuit includes a second source structure in the semiconductor material layer. The second source structure includes a third doped well. The drain structure is between the first source structure and the second source structure. The integrated circuit includes a first deep trench isolation (DTI) extending through the first doped well; and a first thermal contact extending through the first DTI. The thermal contact is in direct contact with the substrate. The first DTI is between the thermal contact and the first doped well.

Abstract: A PIN diode detector includes a substrate. The PIN diode detector further includes a plurality of PIN diode wells in a pixel region, wherein each of the plurality of PIN diode wells has a first dopant type. The PIN diode detector further includes a connecting ring well and a plurality of floating ring wells in a peripheral region, wherein the connecting ring well and plurality of floating ring wells have the first dopant type. The PIN diode detector further includes a field stop ring well surrounding the plurality of floating ring wells, wherein the field stop ring well has a second dopant type opposite the first dopant type. The PIN diode detector further includes a blanket doped region. The blanket doped region extends continuously through an entirety of the pixel region and an entirety of the peripheral region, and the blanket doped region has the second dopant type.

Abstract: A semiconductor device includes a doped region of a first conductivity type in a substrate, a source/drain region of the first conductivity in the doped region, and a gate structure overlapping a portion of the doped region. The semiconductor device further comprises a multi-layer spacer over a first sidewall of the gate structure. The multi-layer spacer comprises a first spacer layer, a second spacer layer over the first spacer layer, and a third spacer layer over the second spacer layer. The first spacer layer and the second spacer layer are in contact with the first sidewall of the gate structure.

Abstract: This application provides a data delivery status indicating method and an apparatus, to effectively indicate a data delivery status, facilitate more accurate flow control, and save transmission resources. A communication method is provided. The method includes a first network node sends data to a terminal device. The first network node sends first indication information and second indication information to a second network node. The first indication information indicated information about a highest sequence number (SN) successfully delivered in sequence in the data. The second indication information indicates information about an SN that is delivered after the highest SN.

Abstract: Embodiments of the present invention provide a communication method, an access network device, a core network device, and user equipment. One example method includes: sending, by a core network device, a handover request to an access network device, wherein the handover request comprises first information, and the first information comprises an identifier of allowed network slice selection assistance information (NSSAI); and sending, by the access network device, a handover request acknowledgement to the core network device.

Abstract: Embodiments of the present invention provide a communication method, an access network device, a core network device, and user equipment. One example method includes: sending, by a core network device, a handover request to an access network device, wherein the handover request comprises first information, and the first information comprises an identifier of allowed network slice selection assistance information (NSSAI); and sending, by the access network device, a handover request acknowledgement to the core network device.

Abstract: A data processing method includes: acquiring a data sorting request for a data sequence to be sorted, and invoking C data bitonic sorting components in response to the data sorting request, C being a positive integer greater than 1; initiating B data bitonic sorting tasks according to the data sequence and the C data bitonic sorting components, B being a positive integer greater than 1, the B data bitonic sorting tasks being respectively associated with different data subsequences of B data subsequences, and the B data subsequences being generated based on the to-be-sorted data sequence; operating the C data bitonic sorting components in parallel according to the B data bitonic sorting tasks to obtain B data sorting subresults; and combining the B data sorting subresults based on the C data bitonic sorting components to obtain a data sorting result for the data sequence.

Abstract: A method and device for processing information, and a storage medium is provided. The method is applied to an authorization proxy server, and includes receiving a first account information of a first vehicle-mounted terminal, determining, based on an associating record of a user account service, that a first account corresponding to the first account information is an authorized account that has been associated with the user account service, and authorizing the first account with a control right for controlling a device to be controlled.

Abstract: An integrated circuit comprising an n-type drift region, a gate structure directly on a first portion of the n-type drift region, a drain structure formed in a second portion of the n-type drift region, the gate structure and the drain structure being separated by a drift region length, a resist protective oxide (RPO) formed over a portion of the n-type drift region between the gate structure and the drain structure, a field plate contact providing a direct electrical connection to the resist protective oxide.