Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: The present disclosure includes an expansion card fixing structure and electronic device using the same. The guiding track includes a track base, the track base includes a track slot, the track slot extends in a first direction, and the track slot portions of the track base recessed in a second direction to form the track slot. A limiting element includes a first end and a second end at intervals along a third direction. The first end extends into the track slot along the third direction, the second end forms an avoidance hole through the second direction. A handle includes a first surface and a second surface, the handle is connected to the second surface by a latch. A resilient member is configured for driving the first end into the track slot. An expansion plate includes a guide portion.

Abstract: A method for detecting workpiece based on homogeneous multi-core architecture is illustrate. The method comprises: obtaining detecting images of detecting workpieces; identifying detecting areas of the detecting workpieces in the detecting images; dividing the preset rotation angle to obtain the rotation accuracy and initial rotation angles; based on each of the initial rotation angles, rotating the detecting areas to obtain a rotation area of each of the initial rotation angles; calculating similarity values between each of the rotation areas and a preset qualified area, and determining a largest similarity value as the target similarity value; and when the rotation accuracy is greater than or equal to a preset accuracy, identifying whether the detecting workpiece is a qualified workpiece according to the target similarity value and a preset similarity threshold.

Abstract: Disclosed are a material analysis method based on the crystal structure database, a system, a computer-readable storage medium and an application. The material analysis method includes comparing experimental pattern information obtained from examination of a to-be-tested sample with theoretical pattern information calculated from material structure data in the crystal structure database, and obtaining crystallographic information and phase composition of the to-be-tested sample through intelligent analysis. The crystallographic information include space group, unit cell parameter, and specific coordinates of atoms in unit cell. The crystal structure database has material structure data obtained by experimental measurement and/or theoretical prediction, including chemical formula, space group, unit cell parameter and specific coordinates of atoms in unit cell.

Abstract: A semiconductor device includes a first region and a second region, and the second region surrounds the first region. The semiconductor device includes at least one electronic unit, a redistribution structure, a plurality of first pads, and a plurality of second pads. The redistribution structure may be electrically connected to at least one electronic unit. A plurality of first pads are arranged on the redistribution structure and correspondingly to the first region. There is a first pitch between two adjacent first pads. A plurality of second pads are arranged on the redistribution structure and correspondingly to the second region. There is a second pitch between two adjacent second pads, so that the first pitch is smaller than the second pitch.

Abstract: An electronic device with a first region and a second region located around the first region is disclosed. The electronic device includes a first gate driver and a second gate driver disposed in the second region, and a first transistor and a second transistor disposed in the first region. The first gate driver is used for outputting a first signal. The second gate driver is used for outputting a second signal. The first transistor is used for receiving the first signal from the first gate driver. The second transistor is used for receiving the second signal from the second gate driver. In a top view of the electronic device, the first region has a first side and a second side opposite to the first side, and the first gate driver and the second gate driver are located more adjacent to the first side and away from the second side.

Abstract: A display device includes a first display unit emitting a green light having a first output spectrum corresponding to a highest gray level of the display device and a second display unit emitting a blue light having a second output spectrum corresponding to the highest gray level of the display device. The first output spectrum has a main wave with a first peak. The second output spectrum has a main wave with a second peak and a sub wave with a sub peak. The second peak corresponds to a main wavelength, the sub peak corresponds to a sub wavelength, and the main wavelength is less than the sub wavelength. An intensity of the second peak is greater than an intensity of the sub peak and an intensity of the first peak.

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Abstract: A display device includes a substrate, an electroluminescence element, a partition structure, a light conversion element and an intermediate layer. The electroluminescence element is disposed above the substrate. The partition structure is disposed above the electroluminescence element and includes a first opening. The light conversion element is disposed in the first opening. The intermediate layer is disposed above the light conversion element and the partition structure. The intermediate layer has a first part and a second part. In a top-view direction, the first part overlaps the light conversion element, the second part overlaps the partition structure, and a thickness of the first part is greater than a thickness of the second part.

Abstract: An image sensor module comprises an image sensor having a light sensing area, a cover glass for covering the light sensing area, a dam between the image sensor and the cover glass, which surrounds the light sensing area, and has an outer wall and an inner wall, where a cross-section of the inner wall parallel to the surface of the light sensing area of the image sensor forms a sawtooth pattern and/or, where a cross-section of the inner wall orthogonal to the surface of the light sensing area of the image sensor forms an inclined surface.

Abstract: A 3D memory array in which epitaxial source/drain regions which are horizontally merged and vertically unmerged are used as source lines and bit lines and methods of forming the same are disclosed. In an embodiment, a memory array includes a first channel region over a semiconductor substrate; a first epitaxial region electrically coupled to the first channel region; a second epitaxial region directly over the first epitaxial region in a direction perpendicular to a major surface of the semiconductor substrate; a dielectric material between the first epitaxial region and the second epitaxial region, the second epitaxial region being isolated from the first epitaxial region by the dielectric material; a gate dielectric surrounding the first channel region; and a gate electrode surrounding the gate dielectric.

Abstract: An annular optical element includes an outer annular surface, an inner annular surface, a first side surface, a second side surface and a plurality of strip-shaped wedge structures. The outer annular surface surrounds a central axis of the annular optical element and includes at least two shrunk portions. The first side surface connects the outer annular surface and the inner annular surface. The second side surface connects the outer annular surface and the inner annular surface, wherein the second side surface is disposed correspondingly to the first side surface. The strip-shaped wedge structures are disposed on the inner annular surface, wherein each of the strip-shaped wedge structures is disposed along a direction from the first side surface towards the second side surface and includes an acute end and a tapered portion connecting the inner annular surface and the acute end.

Abstract: A nanoFET transistor includes doped channel junctions at either end of a channel region for one or more nanosheets of the nanoFET transistor. The channel junctions are formed by a iterative recessing and implanting process which is performed as recesses are made for the source/drain regions. The implanted doped channel junctions can be controlled to achieve a desired lateral straggling of the doped channel junctions.

Abstract: A laterally diffused metal oxide semiconductor device and a preparation method thereof are disclosed. The semiconductor device includes: a substrate; a body region having a first conductivity type and formed in the substrate; a drift region, having a second conductivity type, formed in the substrate and adjacent to the body region; a field plate structure, formed on the drift region, a lower surface of an end of the field plate structure close to the body region being flush with the upper surface of the substrate, and the end of the field plate structure close to the body region also having an upwardly extending inclined surface; and a drain region, having a second conductivity type, formed in an upper layer of the drift region, and in contact with the end of the field plate structure away from the body region.

Abstract: A method for reducing frequency interference, and a communication satellite system. The method includes configuring the communication satellite system, determining a first range of areas in which a spatial isolation angle between the LEO satellite and the GEO satellite does not satisfy a minimum spatial isolation angle within service areas of the movable spot beams, enabling the movable spot beams to not enter the areas, and when the movable spot beams of the transmitting and receiving user antennas of multiple adjacent LEO satellites provide services to a same area, calculating a spatial isolation angles between the movable spot beams of the transmitting and receiving user antennas of any two adjacent LEO satellites, and in response to the spatial isolation angle not satisfying the minimum spatial isolation angle, assigning different sub-frequencies to the movable spot beams that do not satisfy the minimum spatial isolation angle.

Abstract: An optical sensor including a pixel matrix and an opaque layer is provided. The pixel matrix includes a plurality of unblocked pixels, a first pixel and a second pixel, which is arranged at a side of the first pixel in a row direction of the pixel matrix. The opaque layer covers upon a first region, which is a part of the first pixel, and upon a second region, which is a part of the second pixel, but does not cover upon the unblocked pixels, wherein the first region and the second region are symmetrically arranged in the row direction, and uncovered regions of the first pixel and the second pixel are arranged to be larger at a pixel edge than at a pixel center in a column direction of the pixel matrix.

Abstract: A wavelength conversion module includes a driving element, a wavelength conversion wheel, and at least one flow guide. The wavelength conversion wheel includes a rotary disc and at least one wavelength conversion layer. The driving element is connected to the rotary disc to drive the wavelength conversion wheel to rotate along an axis of the driving element as a central axis. The flow guide is disposed beside the wavelength conversion wheel at intervals along the axis, and at least one airflow channel is formed between the flow guide and the wavelength conversion wheel. The flow guide and the driving element are disposed at intervals, and the flow guide does not contact the rotary disc and the driving element. An orthographic projection of the flow guide on the rotary disc overlaps the wavelength conversion layer. When the wavelength conversion wheel rotates, the wavelength conversion wheel and the flow guide move relatively.

Abstract: An information handling system with modular riser components for receiving expansion cards having various requirements. The system includes a riser body assembly having a common support structure for receiving expansion cards. The common support structure may be coupled to different expansion structures to provide support of expansion cards having requirements that would not be met by the common support structure alone.