Abstract: This disclosure discloses a method for determining fidelity of a qubit gate in a quantum chip, and a storage medium. The method includes: determining environmental qubit gates associated with a two-qubit gate in the quantum chip, where the two-qubit gate interacts with the environmental qubit gates in the quantum chip; determining, based on the two-qubit gate and the environmental qubit gates, a first target matrix and a corresponding first evolution matrix, where the first target matrix is a diagonal matrix constructed based on a logic gate, and the first evolution matrix is a matrix obtained after time-dependent evolution; and determining the fidelity of the two-qubit gate based on the number of the environmental qubit gates associated with the two-qubit gate, the first target matrix, and the first evolution matrix. This disclosure solves the technical problem of being unable to determine the fidelity of the two-qubit gate.

Abstract: The present disclosure discloses a method for determining fidelity of a qubit gate in a quantum processor, and a storage medium. The method includes: determining environmental qubit gates associated with a two-qubit gate in the quantum processor, where the two-qubit gate interacts with the environmental qubit gates in the quantum processor; determining a fidelity error of the environmental qubit gates based on a fidelity error of the two-qubit gate; determining frequency of the environmental qubit gates based on the fidelity error of the environmental qubit gates; and determining fidelity of the two-qubit gate based on the frequency of the environmental qubit gates. The present disclosure solves the technical problem of being unable to determine the fidelity of the two-qubit gate.

Abstract: A quantum layout optimization method includes: determining target Hamiltonian parameters of a quantum device; determining an initial quantum layout of the quantum device and initial geometric parameters of the initial quantum layout; determining a target gradient of Hamiltonian parameters of the quantum device to geometric parameters of the initial quantum layout; and adjusting the initial geometric parameters based on the target gradient to have the Hamiltonian parameters of the quantum device be the target Hamiltonian parameters to obtain a target quantum layout.

Abstract: An unmanned aerial vehicle includes a fuselage, a battery accommodation cavity, a battery pack, a battery circuit board, and a functional module. The battery accommodation cavity is disposed on the fuselage. The battery pack includes at least two battery blocks which are mounted inside the battery accommodation cavity. The battery circuit board is electrically connected to the battery blocks in the battery pack. The functional module is electrically connected to the battery circuit board, and the battery blocks in the battery pack supply power to the functional module via the battery circuit board at the same time.

Abstract: The present invention discloses an unmanned aerial vehicle, including: a fuselage; a battery accommodation cavity, disposed on the fuselage; a battery pack, including at least two battery blocks and mounted inside the battery accommodation cavity; a battery circuit board, electrically connected to the battery blocks in the battery pack; and a functional module, electrically connected to the battery circuit board, the battery blocks in the battery pack supplying power to the functional module via the battery circuit board at the same time. By using the solution of the present invention, endurance of the unmanned aerial vehicle is increased.

Abstract: The present invention discloses an unmanned aerial vehicle, including: a fuselage; a battery accommodation cavity, disposed on the fuselage; a battery pack, including at least two battery blocks and mounted inside the battery accommodation cavity; a battery circuit board, electrically connected to the battery blocks in the battery pack; and a functional module, electrically connected to the battery circuit board, the battery blocks in the battery pack supplying power to the functional module via the battery circuit board at the same time. By using the solution of the present invention, endurance of the unmanned aerial vehicle is increased.

Abstract: The present invention relates to the field of air vehicle technologies and provides an unmanned aerial vehicle (UAV), including a vehicle body and arms connected to the vehicle body. The arm is hinged to the vehicle body by using a spherical hinge portion and may be folded or unfolded relative to the vehicle body. Through the forgoing manner, the arm is connected to the vehicle body of the UAV by using the spherical hinge. The arm can be folded and unfolded smoothly without interference, which conforms to known operation habits of users, so that after the entire UAV is folded, the structure becomes more compact and easier to carry. In addition, it can be effectively avoided that the UAV is damaged due to impact in the carrying process.

Abstract: Embodiments of the present invention relate to the technical field of aircrafts, and provide an undercarriage and an unmanned aerial vehicle (UAV) having the undercarriage. The undercarriage includes a power assembly and an undercarriage body. The power assembly includes a connecting member and a drive apparatus for driving the connecting member to reciprocate. The undercarriage body includes a plurality of hinged connecting rods, the plurality of hinged connecting rods constituting at least one parallelogram mechanism, and projections of at least two of the hinged connecting rods on a side face of the fuselage are staggered. The undercarriage body is connected to the connecting member, and when the connecting member reciprocates, the undercarriage body is driven to be folded or unfolded.

Abstract: A process for purifying a crude composition comprising rectifying the crude composition in a rectification plant. The rectification plant comprises a rectification column including: a first overhead condenser for condensing a head fraction, and a reboiler for evaporating a bottom fraction. A difference between a temperature of the head fraction and a temperature of the bottom fraction is less than or equal to 20° C. A heat pump is provided between the first overhead condenser and the reboiler. The heat pump is an indirect heat pump that is operated with water or methanol as a refrigerant, and the indirect heat pump includes an expansion valve and a compressor. The heat pump comprises a second condenser located upstream of the compressor.

Abstract: The utility model relates to an unmanned aerial vehicle and an undercarriage thereof. The undercarriage includes: a power assembly disposed within a fuselage, the power assembly including a first connecting member and a drive apparatus configured to drive the first connecting member to perform a reciprocating linear motion; and an undercarriage body connected to the power assembly, the undercarriage body including a first connecting rod hinged on the first connecting member, and a second connecting rod of which one end is hinged on the power assembly and the other end is hinged on the first connecting rod. When the first connecting member performs the reciprocating linear motion, the undercarriage body is driven to be unfolded or folded into the fuselage. The utility model further relates to an unmanned aerial vehicle. For the foregoing unmanned aerial vehicle and the undercarriage thereof, the power assembly may be used to drive the undercarriage body to switch between an unfolded state and a folded state.

Abstract: The invention provides novel FGFR inhibitors based on the pyridinylpyrimidine. The invention includes inhibitors with broad inhibitory activity against all FGFR isoforms, and inhibitors with selective inhibition against FGFR4. These novel pyridinylpyrimidine-based FGFR inhibitors, or their derivatives, have strong potential to be used to treat cancer.

Abstract: The invention provides a series of GMPS enzyme inhibitors. The invention includes potent GMPS inhibitors that specifically and covalently bind to GMPS, exhibit broad anti-cancer activity, block the infection efficiency of viruses, and have the potentials to suppress undesired immune responses. These novel inhibitors of GMPS, and their derivatives, have tremendous potentials to be used as therapeutic agents for the treatment of cancers, viral infection and immune disorders.

Abstract: Embodiments of the present invention relate to the field of aircraft technologies, and provide an unmanned aerial vehicle including an unmanned aerial vehicle body and a landing gear. The landing gear is entirely accommodated in the unmanned aerial vehicle body when being in a folded state. When being folded, the landing gear in the present invention is entirely accommodated in the unmanned aerial vehicle body, and therefore neither causes unnecessary resistance in air nor blocks an aerial photographing field of view in an aerial photographing process of the unmanned aerial vehicle. In addition, when the unmanned aerial vehicle is not in use, the landing gear is accommodated in the unmanned aerial vehicle body, so that the unmanned aerial vehicle is very compact in structure and easy to accommodate and carry.

Abstract: The invention relates to a method to reduce the contact resistance of ohmic contact in group III-nitride high-electron mobility transistor (HEMT). A heavily n-type doped nitride layer with modulation doping is epitaxially grown on selected contact regions for use as ohmic contact layer. The method for producing the n++ ohmic contact layer includes at least the following: deposition of nitride HEMT epitaxial structure on substrates (such as SiC, silicon, sapphire, GaN etc), deposition in-situ or ex-situ mask for selective growth of n-contact, selective etching to create of openings within the mask layer, deposition of modulation doped n++ nitride ohmic contact layer followed by ohmic metal deposition. The modulation doping involves alternating epitaxy of high and low doped nitride layers with common n-type dopant such as Ge, Si etc. The modulation doping significantly increases the range of n-type doping without detrimental effect on the material quality of the contact layer.

Abstract: The present disclosure includes but is not limited to the III-Nitride semiconductor devices including a barrier layer, a gallium nitride or indium gallium nitride channel layer having a Ga-face coupled with the barrier layer, and a patterned thermoconductive layer having a thermal conductivity of at least 500 W/(m-K) within 1000 nanometers of a Ga-face of the gallium nitride channel layer. The semiconductor device may be a high-electron-mobility transistor or a semiconductor wafer. Methods for making the same also are described.

Abstract: The present invention discloses an unmanned aerial vehicle, including: a fuselage; a battery accommodation cavity, disposed on the fuselage; a battery pack, including at least two battery blocks and mounted inside the battery accommodation cavity; a battery circuit board, electrically connected to the battery blocks in the battery pack; and a functional module, electrically connected to the battery circuit board, the battery blocks in the battery pack supplying power to the functional module via the battery circuit board at the same time. By using the solution of the present invention, endurance of the unmanned aerial vehicle is increased.

Abstract: The present invention discloses an unmanned aerial vehicle, including: a fuselage; a battery accommodation cavity, disposed on the fuselage; a battery pack, including at least two battery blocks and mounted inside the battery accommodation cavity; a battery circuit board, electrically connected to the battery blocks in the battery pack; and a functional module, electrically connected to the battery circuit board, the battery blocks in the battery pack supplying power to the functional module via the battery circuit board at the same time. By using the solution of the present invention, endurance of the unmanned aerial vehicle is increased.

Abstract: The present invention relates to the field of aircrafts and provides a photographic assembly applied to an aircraft, where the aircraft includes a vehicle body. The photographic assembly includes: a vibration absorption member, a frame provided at the periphery of the vehicle body and connected to the vehicle body through a vibration absorption member, a gimbal connected to the frame and a camera connected to the gimbal. The frame of the photographic assembly in embodiments of the present invention can be mounted on unmanned aerial vehicle bodies of different specifications and the frame is sleeved over the vehicle body, so that the structure of the vehicle body can be designed compactly. The embodiments of the present invention further provide an unmanned aerial vehicle having the photographic assembly.

Abstract: The present invention relates to the technical field of aircrafts, and provides a gimbal, a photographing assembly and an unmanned aerial vehicle (UAV) that have the gimbal. The gimbal includes: a first rotating member and a second rotating member. The first rotating member includes a first drive apparatus, the first drive apparatus including a first rotating portion, and the second rotating member includes a second drive apparatus and a first connecting arm, the second drive apparatus including a second fixing portion and a second rotating portion that may rotate relative to the second fixing portion, the first connecting arm being fixedly connected between the first rotating portion and the second fixing portion, and the first connecting arm is integrally formed with the first rotating portion and the second fixing portion.

Abstract: The invention relates to the group III-nitride semiconductor device and corresponding fabricating method. Specifically, a method to reduce RF dispersion in a group III-nitride high electron mobility transistor (HEMT), especially for reduced barrier thickness epi materials and scaled deices for higher frequency applications. Periodic n-type doping within barrier is used to screen surface state traps, which are responsible for the above-mentioned RF dispersion, without introducing additional gate leakage current path. Within the method, the barrier (typically AlGaN, AlInN) layer is periodically n-type doped with its composition (such as Al % within AlGaN) periodically modulated. The periodic structure is effective in both screening surface state traps and reducing the leakage current within the AlGaN/gate Schottky barrier.