Abstract: A magnetic tunnel junction (MTJ) memory cell and a metallic etch mask portion are formed over a substrate. At least one dielectric etch stop layer is deposited over the metallic etch mask portion, and a via-level dielectric layer is deposited over the at least one dielectric etch stop layer. A via cavity may be etched through the via-level dielectric layer, and a top surface of the at least one dielectric etch stop layer is physically exposed. The via cavity may be vertically extended by removing portions of the at least one dielectric etch stop layer and the metallic etch mask portion. A contact via structure is formed directly on a top surface of the top electrode in the via cavity to provide a low-resistance contact to the top electrode.

Abstract: The present invention relates to a process for preparing 3-pyrrolidine carboxylic acid derivatives, and particularly a simple process for preparing 5-substituted 3-pyrrolidine carboxylic acid derivatives. In addition, the present invention relates to a novel pyrrolidine carboxylic acid derivative, its manufacture, pharmaceutical compositions containing it and its use as a catalyst.

Abstract: A vehicle seat and an angle adjustment device thereof. The angle adjustment device comprises an unlock cam (3), a ratchet wheel (2) provided with internal teeth, and a plurality of slide blocks (4) disposed circumferentially and provided with external teeth. The angle adjustment device further comprises a plurality of extension and retraction blocks (6) corresponding to the slide blocks (4), wherein the extension and retraction block (6) is capable of driving the slide block (4) to move outwards in a radial direction so as to engage the internal teeth with the external teeth. A second elastic member (52) is provided between two adjacent extension and retraction blocks (6), and two ends of the second elastic member (52) in a deformation direction are respectively connected to the unlock cam (3) and the extension and retraction block (6).

Abstract: A semiconductor structure includes a metal gate structure comprising a gate dielectric layer and a gate electrode, a conductive layer disposed over the metal gate structure, and a contact feature in direct contact with the top portion of the conductive layer, where the conductive layer includes a bottom portion disposed below a top surface of the metal gate structure and a top portion disposed over the top surface of the metal gate structure, and where the top portion laterally extends beyond a sidewall of the bottom portion.

Abstract: The present invention relates to a process for preparing 3-pyrrolidine carboxylic acid derivatives, and particularly a simple process for preparing 5-substituted 3-pyrrolidine carboxylic acid derivatives. In addition, the present invention relates to a novel pyrrolidine carboxylic acid derivative, its manufacture, pharmaceutical compositions containing it and its use as a catalyst.

Abstract: A conductive layer is formed between a metal gate structure, which includes a high-k gate dielectric layer and a gate electrode, and a contact feature. The conductive layer can be selectively deposited on a top surface of the gate electrode or, alternatively, non-selectively formed on the top surface of the gate electrode and the gate dielectric layer by controlling, for example, time of deposition. The conductive layer can have a bottom portion embedded into the gate electrode. The conductive layer and the contact feature can include the same composition, though they may be formed using different deposition techniques.

Abstract: There is provided a method for predicting a port-stay duration of a vessel at a port. The method includes: determining a plurality of port-stay components of the port-stay duration; determining a regression sequence of the plurality of port-stay components, comprising modeling a first port-stay component and each of a plurality of second port-stay components, determining the regression sequence of the plurality of port-stay components based on a relative measure associated to each of the plurality of second port-stay components; modeling each of the plurality of port-stay components in sequence in accordance with the regression sequence determined to obtain a first plurality of sequentially modeled port-stay components; modeling a first port-stay duration based on the first plurality of sequentially modeled port-stay components to obtain a first port-stay duration model; and predicting the port-stay duration based on the first port-stay duration model.

Abstract: A semiconductor structure includes a metal gate structure including a gate dielectric layer and a gate electrode, the gate electrode including at least a first metal; a conductive layer formed above the gate electrode, the conductive layer including an alloy layer, the alloy layer including at least the first metal and a second metal different from the first metal, the alloy layer extending from a position below a top surface of the metal gate structure to a position above the top surface of the metal gate structure; and a contact feature disposed above the metal gate structure, wherein the contact feature is in direct contact with a top surface of the conductive layer.

Abstract: A method includes forming a metal gate structure, wherein the metal gate structure includes a gate dielectric layer and a gate electrode; performing a surface treatment to a top surface of the metal gate structure, wherein the surface treatment converts a top portion of the gate electrode to an oxidation layer; forming a conductive layer above the gate electrode, wherein the forming of the conductive layer includes substituting oxygen in the oxidation layer with a metallic element; and forming a contact feature above the metal gate structure, wherein the contact feature is in direct contact with the conductive layer.

Abstract: Disclosed are novel N-(3-heteroarylaryl)-4-arylarylcarboxamides and analogs thereof, represented by the Formula I: wherein C cyclic group, D1-D4, Q1, Q2, R5 are defined herein. Compounds having Formula (I) are hedgehog pathway inhibitors. Therefore, compounds of the invention may be used to treat clinical conditions that are responsive to the inhibition of hedgehog activity, such as cancer.

Abstract: An example for determining consensus by Parallel Proof of Voting (PPoV) in a consortium blockchain includes causing each bookkeeping node to generate and publish a block to a consortium blockchain network. After collecting all the block generated in the previous step, the consortium node votes send a total voting message (the hash value of each block, as well as the agreed opinion and signature) to the leader node. The leader node counts the voting results and random selects the next leader node, which publishes the block group header to the consortium blockchain network. When a blockchain node receives the block generated by the bookkeeping nodes and the block group header generated by the leader node, it will store them in the database as a block group.

Abstract: A method performed by a network node or a wireless communications device for determining a reporting threshold related to proximity based positioning in a wireless communications network. For each of a plurality of candidate reporting thresholds the network node or the wireless communications device calculates a corresponding localization accuracy metric based on a deployment information related to a deployment of the wireless communications network, an evaluation position related to the evaluation of a received signal, a propagation model relating the evaluation position and the evaluation of the received signal, and the respective candidate reporting threshold. The network node or the wireless communications device then determines the reporting threshold based on the plurality of corresponding localization accuracy metrics.

Abstract: A method includes forming a metal gate structure, wherein the metal gate structure includes a gate dielectric layer and a gate electrode; performing a surface treatment to a top surface of the metal gate structure, wherein the surface treatment converts a top portion of the gate electrode to an oxidation layer; forming a conductive layer above the gate electrode, wherein the forming of the conductive layer includes substituting oxygen in the oxidation layer with a metallic element; and forming a contact feature above the metal gate structure, wherein the contact feature is in direct contact with the conductive layer.

Abstract: A conductive layer is formed between a metal gate structure, which includes a high-k gate dielectric layer and a gate electrode, and a contact feature. The conductive layer can be selectively deposited on a top surface of the gate electrode or, alternatively, non-selectively formed on the top surface of the gate electrode and the gate dielectric layer by controlling, for example, time of deposition. The conductive layer can have a bottom portion embedded into the gate electrode. The conductive layer and the contact feature can include the same composition, though they may be formed using different deposition techniques.

Abstract: A conductive layer is formed between a metal gate structure, which includes a high-k gate dielectric layer and a gate electrode, and a contact feature. The conductive layer can be selectively deposited on a top surface of the gate electrode or, alternatively, non-selectively formed on the top surface of the gate electrode and the gate dielectric layer by controlling, for example, time of deposition. The conductive layer can have a bottom portion embedded into the gate electrode. The conductive layer and the contact feature can include the same composition, though they may be formed using different deposition techniques.

Abstract: Disclosed are 1-(arylmethyl)quinazoline-2,4(1H,3H)-diones represented by the Formula (I): wherein Ar, R1-R6 are defined herein. Compounds having Formula (I) are PARP inhibitors. Therefore, compounds of the invention may be used to treat clinical conditions that are responsive to the inhibition of PARP activity.

Abstract: Disclosed are 1-(arylmethyl)quinazoline-2,4(1H,3H)-diones represented by the Formula (I): wherein Ar, R1-R6, are defined herein. Compounds having Formula (I) are PARP inhibitors. Therefore, compounds of the invention may be used to treat clinical conditions that are responsive to the inhibition of PARP activity.

Abstract: The present invention relates to a process for preparing 3-pyrrolidine carboxylic acid derivatives, and particularly a simple process for preparing 5-substituted 3-pyrrolidine carboxylic acid derivatives. In addition, the present invention relates to a novel pyrrolidine carboxylic acid derivative, its manufacture, pharmaceutical compositions containing it and its use as a catalyst.

Abstract: A conductive layer is formed between a metal gate structure, which includes a high-k gate dielectric layer and a gate electrode, and a contact feature. The conductive layer can be selectively deposited on a top surface of the gate electrode or, alternatively, non-selectively formed on the top surface of the gate electrode and the gate dielectric layer by controlling, for example, time of deposition. The conductive layer can have a bottom portion embedded into the gate electrode. The conductive layer and the contact feature can include the same composition, though they may be formed using different deposition techniques.

Abstract: An improved method of analyzing software issues may include retrieving and storing selected data elements from the operating system kernel data prior to performing a memory dump. The method of retrieving the selected kernel data may include creating a thread dedicated to collecting the data and storing it in a memory location for analysis after the memory dump. The operating system kernel data may be analyzed in conjunction with the prior art dump data to identify a root cause of the software issue.