Abstract: Disclosed herein is a method of making a sensing element comprising forming an electrically conductive element, wherein the sensing element comprises a metal selected from the group consisting of Pd and alloys and combinations comprising Pd; and wherein the electrically conductive element is thermally stable at temperatures as high as 1,200° C.

Abstract: A solid oxide fuel cell stack having a plurality of cassettes and a compliant glass seal disposed between the sealing surfaces of adjacent cassettes, thereby joining the cassettes and providing a hermetic seal therebetween. The compliant glass seal may include a glass, at least one metal selected from Groups 9, 10, and 11 of the periodic table, and fibers of yttria-stabilized zirconia (YSZ) to enhance the desirable properties of the compliant glass seal. The combined weight percentage of the at least one metal and YSZ in the compliant glass seal is 30 to 42.5 weight percent, preferably 37.5 percent.

Abstract: Disclosed herein is a method of making a sensing element comprising forming an electrically conductive element, wherein the sensing element comprises a metal selected from the group consisting of Pd and alloys and combinations comprising Pd; and wherein the electrically conductive element is thermally stable at temperatures as high as 1,200° C.

Abstract: Disclosed herein is a method of making a gas sensor element, comprising calcining a NOx sensor electrode material at a NOx sensor electrode material calcination temperature of about 1200 to about 1600° C. to form a calcined NOx sensor electrode material, disposing the calcined NOx sensor electrode material on a substrate to form a substrate comprising a NOx sensor electrode, and firing the substrate comprising the NOx sensor electrode at a gas sensor element firing temperature to form a gas sensor element comprising a NOx sensor electrode. Also disclosed is a gas sensor comprising the gas sensor element.

Abstract: A method for forming an electrode comprises: combining a platinum precursor with a gold precursor to form an electrode ink; forming the electrode ink into an electrode precursor; firing the electrode precursor to form the electrode; treating the electrode in an environment having an oxygen partial pressure of less than or equal to 500 ppm oxygen for a period of time sufficient produce an electrode with an exposed surface gold concentration of greater than or equal to about 6 times a bulk gold concentration in the electrode.

Abstract: Disclosed herein is a sensing element comprising: an electrochemical cell; wherein the sensing element comprises a metal selected from the group consisting of Pd and alloys and combinations comprising at least one of the foregoing; and wherein the electrically conductive element is thermally stable at temperatures of greater than or equal to about 1,200° C.

Abstract: A method for forming an electrode comprises: combining a platinum precursor with a gold precursor to form an electrode ink; forming the electrode ink into an electrode precursor; firing the electrode precursor to form the electrode; treating the electrode in an environment having an oxygen partial pressure of less than or equal to 500 ppm oxygen for a period of time sufficient produce an electrode with an exposed surface gold concentration of greater than or equal to about 6 times a bulk gold concentration in the electrode.

Abstract: A magnetron sputter deposition process for producing a thin film alloy exhibiting shape memory characteristics comprising conducting the sputter deposition using krypton as process gas, depositing the alloy onto heated substrate so secondary annealing is unnecessary, and using a sputter target titanium, nickel and/or palladium in proportions so as to produce a thin film alloy of a composition having a titanium content ranging from at least about 50 atomic percent to less than about 52 atomic percent.

Abstract: A method for producing thin film deposits of ternary shape-memory alloys using an ion sputtering deposition process comprising using a hot pressed metal powder composition target.

Abstract: Disclosed is a method for producing ternary shape-memory alloy films employing sputtering process techniques using krypton as a process gas.

Abstract: A nickel titanium hafnium copper thin film shape memory alloy having a composition (TiHf)5-55(NiCu)45-50 comprising about 2 atomic percent to about 10 atomic percent copper and the fabrication method of said shape memory thin film by magnstron sputtering using Kr as working gas and conducting the deposition at elevated substrate temperature.

Abstract: A process is provided for forming a thin film deposit of a Ni—Ti—Hf ternary shape memory alloy on a substrate by magnetron sputtering deposition having high transformation temperatures and good shape-memory and mechanical properties. The method of forming a thin film deposit of a ternary shape memory alloy on a substrate by sputtering deposition comprises arranging a Ni—Ti—Hf target and a substrate within a deposition chamber, maintaining a working distance from the target to the substrate of about 83 mm to 95 mm; heating the substrate to a temperature high enough to induce in-situ crystallization; introducing a krypton working gas into the deposition chamber; applying appropriate level of deposition power so that the deposition rate is from about 6 Å per second to about 120 Å per second; and, depositing a Ni—Ti—Hf shape memory alloy film having a composition ranging from about Ni48(TiHf)52 to Ni50(TiHf)50.

Abstract: A method for producing thin film deposits of binary shape-memory alloys using an ion sputtering deposition process comprising using a hot pressed metal powder composition target.