Abstract: Methods, systems, and devices for decoder architecture for memory device are described. An apparatus includes a memory array having a memory cell and an access line coupled with the cell and a decoder having a first stage and a second stage. The decoder supplying a first voltage during a first access operation and a second voltage during a second access operation to the access line. The second stage of the decoder includes a first transistor that supplies the first voltage based on a third voltage at the source of the first transistor exceeding a fourth voltage at a gate of the first transistor and a first threshold voltage. The second stage includes a second transistor that supplies the second voltage based on a fifth voltage at a gate of the second transistor exceeding a sixth voltage at the source of the second transistor and a second threshold voltage.

Abstract: Methods and apparatuses with counter-based reading are described. A memory cells of a codeword are accessed and respective voltages are generated. A reference voltage is generated and a logic state of each memory cell is determined based on the reference voltage and the respective generated cell voltage. The reference voltage is modified until a count of memory cells determined to be in a predefined logic state with respect to the last modified reference voltage value meets a criterium. In some embodiments the criterium may be an exact match between the memory cells count and an expected number of memory cells in the predefined logic state. In other embodiments, an error correction (ECC) algorithm may be applied while the difference between the count of cells in the predefined logic state and the expected number of cells in that state does not exceed a detection or correction power of the ECC.

Abstract: Methods and devices for techniques for precharging a memory cell are described. Precharging a memory cell while the memory cell is coupled with its digit line may reduce a total duration of an access operation thereby reducing a latency associated with accessing a memory device. During a read operation, the memory device may select a word line to couple the memory cell with a selected digit line. Further, the memory device may selectively couple the selected digit line with a reference digit line that is to be precharged to a given voltage. A difference in voltage between the selected digit line and the reference digit line at the completion of precharging may represent a signal indicative of a logic state of the memory cell. The memory device may use a capacitor precharged to a first voltage to capture the signal.

Abstract: Techniques are described for maintaining a stable voltage difference in a memory device, for example, during a critical operation (e.g., a sense operation). The voltage difference to be maintained may be a read voltage across a memory cell or a difference associated with a reference voltage, among other examples. A component (e.g., a local capacitor) may be coupled, before the operation, with a node biased to a first voltage (e.g., a global reference voltage) to sample a voltage difference between the first voltage and a second voltage while the circuitry is relatively quiet (e.g., not noisy). The component may be decoupled from the node before the operation such that a node of the component (e.g., a capacitor) may be allowed to float during the operation. The voltage difference across the component may remain stable during variations in the second voltage and may provide a stable voltage difference during the operation.

Abstract: Methods, systems, and devices for voltage equalization for pillars of a memory array are described. In some examples, a memory array may be configured with conductive pillars that are each coupled with a respective set of memory cells, and may be selectively coupled with an access line. To support a dissipation or equalization of charge from unselected pillars, the memory array may be configured with a material layer or level that provides a dissipative coupling, such as a coupling having a relatively high resistance or a degree of capacitance, with a ground voltage or other voltage source (e.g., to support a passive equalization). Additionally or alternatively, a memory array may be configured to support an active dissipation of accumulated charge or voltage by selectively coupling pillars that have been operated in a floating condition with a ground voltage or other voltage source (e.g., to perform a dynamic equalization).

Abstract: Methods, systems, and devices for decoder architecture for memory device are described. An apparatus includes a memory array having a memory cell and an access line coupled with the cell and a decoder having a first stage and a second stage. The decoder supplying a first voltage during a first access operation and a second voltage during a second access operation to the access line. The second stage of the decoder includes a first transistor that supplies the first voltage based on a third voltage at the source of the first transistor exceeding a fourth voltage at a gate of the first transistor and a first threshold voltage. The second stage includes a second transistor that supplies the second voltage based on a fifth voltage at a gate of the second transistor exceeding a sixth voltage at the source of the second transistor and a second threshold voltage.

Abstract: A memory cell comprises an elevationally extending programmable field effect transistor comprising a gate insulator that is reversibly programmable into two programmable states characterized by two different Vt's of the programmable transistor. The programmable transistor comprises a top source/drain region and a bottom source/drain region. A bottom select device is electrically coupled in series with and elevationally inward of the bottom source/drain region of the programmable transistor. A top select device is electrically coupled in series with and is elevationally outward of the top source/drain region of the programmable transistor. A bottom select line is electrically coupled in series with and is elevationally inward of the bottom select device. A top select line is electrically coupled in series with and is elevationally outward of the top select device. Other embodiments are disclosed.

Abstract: Apparatuses and methods for memory that includes a first memory cell including a storage component having a first end coupled to a plate line and a second end coupled to a digit line, and a second memory cell including a storage component having a first end coupled to a digit line and a second end coupled to a plate line, wherein the digit line of the second memory cell is adjacent to the plate line of the first memory cell.

Abstract: The present disclosure relates to a method for reading memory cells, and may include applying a first read voltage to a plurality of memory cells, detecting first threshold voltages exhibited by the plurality of memory cells in response to application of the first read voltage, associating a first logic state to one or more cells of the plurality of memory cells, applying a second read voltage to the plurality of memory cells, where the second read voltage has the same polarity of the first read voltage and a higher magnitude than an expected highest threshold voltage of memory cells in the first logic state, and detecting second threshold voltages exhibited by the plurality of memory cells in response to application of the second read voltage, among other aspects. A related circuit, a related memory device and a related system are also disclosed.

Abstract: Methods, circuits, and systems for reading memory cells are described. The method may include: applying a first voltage with a first polarity to a plurality of the memory cells; applying a second voltage with a second polarity to one or more of said plurality of the memory cells; applying at least a third voltage with the first polarity to one or more of said plurality of the memory cells; detecting electrical responses of memory cells to the first voltage, the second voltage, and the third voltage; and determining a logic state of respective memory cells based on the electrical responses of the memory cells to the first voltage, the second voltage, and the third voltage.

Abstract: Methods, systems, and devices for a memory system with centralized power management are described. A memory system may include memory devices and a power management circuit. The memory devices may use one or more supply voltages during operation of the memory devices, which may include supply voltages received from an external device and high supply voltages generated within the memory system. The power management circuit may receive supply voltages from the external device and generate the supply voltages to the memory devices. The memory devices may exclude charge pump circuitry for generating supply voltages and may instead include pads for receiving the supply voltages from the power management circuit, in some examples. The memory system may include a controller that is configured to determine an amount of power to provide to the memory devices and transmit an indication of the amount of power to the power management circuit.

Abstract: Methods, systems, devices, and techniques for read operations are described. In some examples, a memory device may include a first transistor (e.g., memory node transistor) configured to receive a precharge voltage at a first gate and output first voltage based on a threshold of the first transistor to a reference node via a first switch. The device may include a second transistor (e.g., a reference node transistor) configured to receive a precharge voltage and output a second voltage based on a threshold of the second transistor to a memory node via a second switch. The first voltage may be modified by a reference voltage and input to the second transistor. The second voltage may be modified by a voltage stored on a memory cell and input to the first transistor. The first and second transistor may output third and fourth voltages to be sampled to a latch.

Abstract: Methods, systems, and devices for differential sensing for a memory device are described. A memory device in accordance with examples as disclosed herein may include a sense component having a signal development component for generating a sense signal, a reference component for generating a reference signal, and a tail component coupled with the signal development component and the reference component. The tail component may be configured for canceling common aspects of the sense signal and the reference signal. Additionally or alternatively, a memory device in accordance with examples as disclosed herein may include a sense component having a sense amplifier configured to operate in multiple power domains, with one power domain associated with sense signal and reference signal generation and comparison, and another power domain associated with logical signal or information transfer.

Abstract: Methods, systems, and devices for word line timing management are described. In some examples, a digit line may be precharged as part of accessing a memory cell. The memory cell may include a storage component and a selection component. A word line may be coupled with the selection component, and the word line may be selected in order to couple the storage component with the digit line, by way of the selection component. The word line may be selected while the digit line is still being precharged, and the storage component may become coupled with the digit line with reduced delay after the end of precharging of the digit line, concurrent with the end of the precharging of the digit line, or while the digit line is still being charged. Related techniques for sensing a logic state stored by the memory cell are also described.

Abstract: Methods, systems, and devices for sensing techniques for a memory cell are described to enable a latch to sense a logic state of a memory cell. A transistor coupled with a memory cell may boost a first voltage associated with the memory cell to a second voltage via one or more parasitic capacitances of the transistor. The second voltage may be developed on a first node of a sense component, and the second voltage may be shifted to a third voltage at a first node of the sense component by applying a voltage to a shift node coupled with a capacitor of the sense component. Similar boosting and shifting operations may be performed to develop a reference voltage on a second node of the sense component. The sense component may sense the state of the memory cell by comparing with the reference voltage.

Abstract: A memory apparatus and a method for operating the same. The method includes performing a read operation on a set of memory cells, detecting an error in data read from the set of memory cells based on an error correction code (ECC) operation performed on the data, and performing a scrubbing operation or a refreshing operation on the set of memory cells according to a detecting result.

Abstract: A method for accessing of memory cells where a set of user data is stored in a plurality of memory cells of the memory array, including: latching a current row address of a selected plurality of memory access; comparing a last row address with the current row address; if the result of the comparison is negative, executing a leakage compensation algorithm through a memory sensing circuitry; if the result of the comparison is positive, waiting for the completion of a write to read procedure on the selected plurality of memory cells.

Abstract: Methods and apparatuses with counter-based reading are described. In a memory device, a memory cells of a codeword are accessed and respective voltages are generated. A reference voltage is generated and a logic state of each memory cell is determined based on the reference voltage and the respective generated cell voltage. The reference voltage is modified until a count of memory cells determined to be in a predefined logic state with respect to the last modified reference voltage value meets a criterium. In some embodiments the criterium may be an exact match between the memory cells count and an expected number of memory cells in the predefined logic state. In other embodiments, an error correction (ECC) algorithm may be applied while the difference between the count of cells in the predefined logic state and the expected number of cells in that state does not exceed a detection or correction power of the ECC.

Abstract: Methods and devices for techniques for precharging a memory cell are described. Precharging a memory cell while the memory cell is coupled with its digit line may reduce a total duration of an access operation thereby reducing a latency associated with accessing a memory device. During a read operation, the memory device may select a word line to couple the memory cell with a selected digit line. Further, the memory device may selectively couple the selected digit line with a reference digit line that is to be precharged to a given voltage. A difference in voltage between the selected digit line and the reference digit line at the completion of precharging may represent a signal indicative of a logic state of the memory cell. The memory device may use a capacitor precharged to a first voltage to capture the signal.

Abstract: Methods, systems, and apparatuses for full bias sensing in a memory array are described. Various embodiments of an access operation of a cell in a array may be timed to allow residual charge of a middle electrode between the cell and a selection component to discharge. Access operations may also be timed to allow residual charge of middle electrodes associated with other cells to be discharged. In conjunction with an access operation for a target cell, a residual charge of a middle electrode of another cell may be discharged, and the target cell may then be accessed. A capacitor in electronic communication with a cell may be charged and a logic state of the cell determined based on the charge of the capacitor. The timing for charging the capacitor may be related to the time for discharging a middle electrode of the cell or another cell.