Abstract: The invention provides an anti-glare coating of wide bandgap nanostructured oxide material so as to reduce the dazzling reflections of sunlight and avoid light pollution generated by spacecraft. The coating provides selective electrodeposition of a nanostructured wide bandgap oxide material on the metal contact grid on the surface of a solar panel of a spacecraft or a satellite in which the metal contact grid constitutes the cathode, and the resulting nanostructures have a width and spacing less than the wavelength ‘?’ of the incident light or equal to ‘?/n’ with ? located between 180 nm and 8?m, and ‘n’ being the refractive index of the nanostructured material so that for angles of incidence between 0.01 and 90 degrees less than 0.5% of light is reflected.

Abstract: The inventive method provides for a method of p-type doping of Ga2O3 without adding impurity elements. Embodiments allow for significant simplification relative to extrinsic impurity element doping, and thus offers a reduced fabrication cost while being more temperature resistant since the defect dopants require higher temperatures to alter their impact. Certain methods disclosed provide for p-type gallium oxide formation via intrinsic defect doping, without requiring the addition of impurity elements which provide significant simplification relative to the existing state of the art approaches providing more temperature and radiation resistance, while offering a reduced fabrication cost.

Abstract: The inventive method provides for a method of p-type doping of Ga2O3 without adding impurity elements. Embodiments allow for significant simplification relative to extrinsic impurity element doping, and thus offers a reduced fabrication cost while being more temperature resistant since the defect dopants require higher temperatures to alter their impact. Certain methods disclosed provide for p-type gallium oxide formation via intrinsic defect doping, without requiring the addition of impurity elements which provide significant simplification relative to the existing state of the art approaches providing more temperature and radiation resistance, while offering a reduced fabrication cost.

Abstract: A method of producing a p doped wide bandgap semiconductor including growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a selected p dopant.

Abstract: A method of producing a p doped wide bandgap semiconductor including growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a selected p dopant.