Abstract: An electronic device includes a GaN power FET, a GaN driver coupled to the GaN power FET and a gate bias circuit coupled to the GaN driver. The GaN power FET and the GaN driver are monolithically integrated on a single GaN die. The gate bias circuit is predominately monolithically integrated on the single GaN die and includes only one active component external to the single GaN die. In one embodiment, the only active component external to the single GaN die is a linear regulator. In another embodiment, the only active component external to the single GaN die is a shunt regulator. In yet another embodiment, the only active component external to the single GaN die is a Zener diode.

Abstract: Purified preparations of human embryonic stem cells with certain population-specific characteristics are disclosed. This preparation is characterized by the positive expression of the following pluripotent cell surface markers: SSEA-1 (?); SSEA-4 (+); TRA-1-60 (+); TRA-1-81 (+); alkaline phosphatase (+), as well as a set of ES cell markers including Oct-4, Nanog, Rex1, Sox2, Thy1, FGF4, ABCG2, Dppa5, UTF1, Criptol, hTERT, Connexin-43 and Connexin-45. The cells of the preparation are negative for lineage specific markers like Keratin 8, Sox-1, NFH (ectoderm), MyoD, brachyury, cardiac-actin (mesoderm), HNF-3 beta, albumin, and PDX1 (endoderm). The cells of the preparation are human embryonic stem cells, have normal karyotypes, exhibit high telomerase activity and continue to proliferate in an undifferentiated state after continuous culture for over 40 passages.