Abstract: A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mn4+ doped phosphor, wherein the lighting apparatus has a color shift of ?1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm2, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25° C.

Abstract: A converter element is provided, comprising a first conversion region comprising a first phosphor, a second conversion region comprising a second phosphor, wherein the first phosphor has upon excitation a faster radiation decay lifetime than the second phosphor, wherein at least one of the first and second phosphor is embedded in a matrix material, wherein the matrix material comprises a three-dimensionally crosslinked polysiloxane having an organic content of less than 40 wt %. Further, a method for producing a converter element and a radiation emitting device are provided.

Abstract: A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mn4+ doped phosphor, wherein the lighting apparatus has a color shift of ?1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm2, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25° C.

Abstract: A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mn4+ doped phosphor, wherein the lighting apparatus has a color shift of ?1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm2, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25° C.

Abstract: A population of coated phosphor particles is presented. Each coated phosphor particle has a core including a Mn4+ doped phosphor and a shell including aluminum oxide, titanium oxide, zirconium oxide, zinc oxide, tin oxide, silicon dioxide, hafnium oxide, indium oxide, indium tin oxide, potassium fluoride, titanium nitride, boron nitride, silicon nitride, a polymer material, or a combination thereof. A process for preparing the population of coated phosphor particles is also presented.

Abstract: A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mn4+ doped phosphor, wherein the lighting apparatus has a color shift of ?1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm2, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25° C.

Abstract: A population of coated phosphor particles is presented. Each coated phosphor particle has a core including a Mn4+ doped phosphor and a shell including aluminum oxide, titanium oxide, zirconium oxide, zinc oxide, tin oxide, silicon dioxide, hafnium oxide, indium oxide, indium tin oxide, potassium fluoride, titanium nitride, boron nitride, silicon nitride, a polymer material, or a combination thereof. A process for preparing the population of coated phosphor particles is also presented.

Abstract: A lighting apparatus is presented. The lighting apparatus includes a semiconductor light source, a color stable Mn4+ doped phosphor and a quantum dot material, each of the color stable Mn4+ doped phosphor and the quantum dot material being radiationally coupled to the semiconductor light source. A percentage intensity loss of the color stable Mn4+ doped phosphor after exposure to a light flux of at least 20 w/cm2 at a temperature of at least 50 degrees Celsius for at least 21 hours is ?4%. A backlight device including the lighting apparatus is also presented.

Abstract: A lighting apparatus includes an LED light source radiationally coupled to a composite material including a phosphor of formula I and a thermally conductive material dispersed in at least a portion of a binder material. The thermally conductive material includes a material selected from the group consisting of indium oxide, tin oxide, indium tin oxide, calcium oxide, barium oxide, strontium oxide, aluminum hydroxide, magnesium hydroxide, calcium hydroxide, barium hydroxide, strontium hydroxide, zinc hydroxide, aluminum phosphate, magnesium phosphate, calcium phosphate, barium phosphate, strontium phosphate, diamond, graphene, polyethylene nanofibers, carbon nanotubes, silver metal nanoparticles, copper metal nanoparticles, gold metal nanoparticles, aluminum metal nanoparticles, boron nitride, silicon nitride, an alkali metal halide, calcium fluoride, magnesium fluoride, a compound of formula II, and combinations thereof.

Abstract: A phosphor composition is derived from combining K2SiF6:Mn4+ in solid form with a saturated solution of a manganese-free complex fluoride including a composition of formula I: A3[MF6], where A is selected from Na, K, Rb, and combinations thereof and M is selected from Al, Ga, In, Sc, Y, Gd, and combinations thereof. The composition of formula I: A3[MF6] has a water solubility lower than a water solubility of K2SiF6. A lighting apparatus including the phosphor composition is also provided.

Abstract: Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including IniGajAlkN, wherein 0?i; 0?j; 0?k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C1-C20 alcohol, a C1-C20 ketone, a C1-C20 acetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.

Abstract: A process for fabricating a LED lighting apparatus includes disposing a composite coating on a surface of a LED chip. The composite coating comprises a first composite layer having a manganese doped phosphor of formula I and a first binder, and a second composite layer comprising a second phosphor composition and a second binder. The first binder, the second binder or both include a poly(meth)acrylate. Ax[MFy]:Mn4+??(I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.

Abstract: Methods for fabricating coated semiconductor elements are presented. The methods include the steps of combining a phosphor of formula I and a polymer binder to form a composite material, providing a semiconductor wafer including IniGajAlkN, wherein 0?i; 0?j; 0?k, and a sum of i, j and k is equal to 1, coating the composite material on a surface of the semiconductor wafer to form a coated semiconductor wafer, and dicing the coated semiconductor wafer using a cutting fluid apparatus to form one or more coated semiconductor elements. A cutting fluid of the cutting fluid apparatus includes a C1-C20 alcohol, a C1-C20 ketone, a C1-C20 acetate compound, acetic acid, oleic acid, carboxylic acid, a source of A, silicic acid, or a combination thereof.

Abstract: A lighting apparatus includes an LED light source radiationally coupled to a composite material including a phosphor of formula I and a thermally conductive material dispersed in at least a portion of a binder material. The thermally conductive material includes a material selected from the group consisting of indium oxide, tin oxide, indium tin oxide, calcium oxide, barium oxide, strontium oxide, aluminum hydroxide, magnesium hydroxide, calcium hydroxide, barium hydroxide, strontium hydroxide, zinc hydroxide, aluminum phosphate, magnesium phosphate, calcium phosphate, barium phosphate, strontium phosphate, diamond, graphene, polyethylene nanofibers, carbon nanotubes, silver metal nanoparticles, copper metal nanoparticles, gold metal nanoparticles, aluminum metal nanoparticles, boron nitride, silicon nitride, an alkali metal halide, calcium fluoride, magnesium fluoride, a compound of formula II, and combinations thereof.

Abstract: A process for synthesizing a color stable Mn4+ doped phosphor includes contacting a precursor of formula I, in gaseous form at an elevated temperature with a fluorine-containing oxidizing agent to form the color stable Mn4+ doped phosphor Ax[MFy]:Mn4+??I wherein A is Li, Na, K, Rb, Cs, NR4 or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; R is H, lower alkyl, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; and y is 5, 6 or 7.

Abstract: A lighting apparatus includes a semiconductor light source in direct contact with a polymer composite comprising a color stable Mn4+ doped phosphor, wherein the lighting apparatus has a color shift of 1.5 MacAdam ellipses after operating for at least 2,000 hour at a LED current density greater than 2 A/cm2, a LED wall-plug efficiency greater than 40%, and a board temperature greater than 25° C.

Abstract: A color stable Mn4+ doped phosphor of formula I, Ax[MFy]:Mn4+??I wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and wherein % intensity loss of the phosphor after exposure to light flux of at least 80 w/cm2 at a temperature of at least 50° C. for at least 21 hours is ?4%.

Abstract: A process for synthesizing a manganese (Mn4+) doped phosphor includes milling particles of the a phosphor precursor of formula I, and contacting the milled particles with a fluorine-containing oxidizing agent at an elevated temperature Ax[MFy]:Mn4+??(I) wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7.

Abstract: A phosphor composition is derived from combining K2SiF6:Mn4+ in solid form with a saturated solution of a manganese-free complex fluoride including a composition of formula I:A3[MF6], where A is selected from Na, K, Rb, and combinations thereof and M is selected from Al, Ga, In, Sc, Y, Gd, and combinations thereof. The composition of formula I:A3[MF6] has a water solubility lower than a water solubility of K2SiF6. A lighting apparatus including the phosphor composition is also provided.

Abstract: A process for synthesizing a Mn4+ doped phosphor includes contacting a precursor of formula I, Ax(M1?z,Mnz)Fy??I at an elevated temperature with a fluorine-containing oxidizing agent in gaseous form to form the Mn4+ doped phosphor; wherein A is Li, Na, K, Rb, Cs, or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Hf, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; x is the absolute value of the charge of the [MFy] ion; y is 5, 6 or 7; and 0.03?z?0.10.