Abstract: Disclosed herein are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic ?-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present disclosure can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Abstract: The present invention provides a polymer comprising a unit of formula, wherein R1 and R2 are independently from each other C1-30-alkyl, C2-30-alkenyl, C2-30-alkynyl, phenyl or a 5 to 8 membered heterocyclic ring system, wherein each of the C1-30-alkyl, C2-30-alkenyl or C2-30-alkynyl group may be substituted with 1 to 10 substituents independently selected from the group consisting of halogen, —CN, —NO2, —OH, —NH2, —NH(C1-20-alkyl), —N(C1-20-alkyl)2, —NH—C(O)—(C1-20-alkyl), —S(O)2OH, —CHO, —C(O)—C1-20-alkyl, —C(O)OH, —C(O)—OC1-20-alkyl, —C(O)NH2, —CO(O)NH—C1-20-alkyl, —C(O)N(C1-20-alkyl)2, —O—C1-20-alkyl, —O—C(O)—C1-20-alkyl, —SiH3, SiH2(C1-20-alkyl), SiH(C1-20-alkyl)2, Si(C1-20-alkyl)3, C4-8-cycloalkyl, phenyl and a 5 to 8 membered heterocyclic ring system, and phenyl and the 5 to 8 membered heterocyclic ring system may be substituted with 1 to 5 C1-16-alkyl groups, is 1, 2 or 3 and n is an integer from 2 to 10'000, a process for the preparation of the polymer and an electronic device comprising the p

Abstract: The present invention provides semiconducting compounds, oligomers and polymers of formula wherein A1 and A2 can be the same or different and are S or Se, E is selected from the group consisting of The compounds, oligomers and polymers of formula of formula (1) are suitable for use in electronic devices such as organic field effect transistors.

Abstract: Disclosed herein are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic ?-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present disclosure can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Abstract: Phenacene compounds of formula (I) are disclosed. All the variables in the formula are the same as defined in the description. A thin film semiconductor comprising the above compounds, and a field effect transistor device, a photovoltaic device, an organic light emitting diode device and a unipolar or complementary circuit device comprising the thin film are also disclosed.

Abstract: Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic ?-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Abstract: Disclosed are new semiconductor materials prepared from rylene-(?-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Abstract: The present invention provides a polymer comprising a unit of formula, wherein R1 and R2 are independently from each other C1-30-alkyl, C2-30-alkenyl, C2-30-alkynyl, phenyl or a 5 to 8 membered heterocyclic ring system, wherein each of the C1-30-alkyl, C2-30-alkenyl or C2-30-alkynyl group may be substituted with 1 to 10 substituents independently selected from the group consisting of halogen, —CN, —NO2, —OH, —NH2, —NH(C1-20-alkyl), —N(C1-20-alkyl)2, —NH—C(O)—(C1-20-alkyl), —S(O)2OH, —CHO, —C(O)—C1-20-alkyl, —C(O)OH, —C(O)—OC1-20-alkyl, —C(O)NH2, —CO(O)NH—C1-20-alkyl, —C(O)N(C1-20-alkyl)2, —O—C1-20-alkyl, —O—C(O)—C1-20-alkyl, —SiH3, SiH2(C1-20-alkyl), SiH(C1-20-alkyl)2, Si(C1-20-alkyl)3, C4-8-cycloalkyl, phenyl and a 5 to 8 membered heterocyclic ring system, and phenyl and the 5 to 8 membered heterocyclic ring system may be substituted with 1 to 5 C1-16-alkyl groups, is 1, 2 or 3 and n is an integer from 2 to 10'000, a process for the preparation of the polymer and an electronic device comprising the p

Abstract: Provided are semiconductors prepared from an enantiomerically enriched mixture of a nitrogen-functionalized rylene bis(dicarboximide) compound. Specifically, the enantiomerically enriched mixture has unexpected electron-transport efficiency compared to the racemate or either of the enantiomers in optically pure form.

Abstract: The present invention provides semiconducting compounds, oligomers and polymers of formula wherein A1 and A2 can be the same or different and are S or Se, E is selected from the group consisting of The compounds, oligomers and polymers of formula of formula (1) are suitable for use in electronic devices such as organic field effect transistors.

Abstract: Phenacene compounds of formula (I) are disclosed. All the variables in the formula are the same as defined in the description. A thin film semiconductor comprising the above compounds, and a field effect transistor device, a photovoltaic device, an organic light emitting diode device and a unipolar or complementary circuit device comprising the thin film are also disclosed.

Abstract: The invention concerns apolymer of the formula (I): wherein: M1 is an optionally substituted dithienophthalimide formula (II): wherein: X is N or C—R, wherein R is H or a C1-C40 alkyl group, R2, at each occurrence, is independently selected from H, a C1-40 alkyl group, a C2-40 alkenyl group, a C1-40 haloalkyl group, and a monocyclicor polycyclic moiety, wherein: each of the C1-40 alkyl group, the C2-40 alkenyl group, and the C1-40 haloalkyl group can be optionally substituted with 1-10 substituents independently selected from a halogen, CN, —NO2, OH, NH2, —NH(C1-20 alkyl), N(C1-20 alkyl)2, —S(O)2OH, —CHO, —C(O)—C1-20 alkyl, —C(O)OH, —C(O)—OC1-20 alkyl, —C(O)NH2, —C(O)NH—C1-20 alkyl, —C(O)N(C1-20 alkyl)2, —OC1-20 alkyl, —SiH3, —SiH(C1-20 alkyl)2, —SiH2(C1-20 alkyl), and —Si(C1-20 alkyl)3; and the monocyclic or polycyclic moiety can be covalently bonded to the imide nitrogen via an optional linker, and can be optionally substituted with 1-5 substituentsindependently selected from a halogen, oxo, —CN, —NO2, OH,

Abstract: Disclosed are new semiconductor materials prepared from perylene-imide copolymers. Such polymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Abstract: The invention concerns apolymer of the formula (I): wherein: M1 is an optionally substituted dithienophthalimide formula (II): wherein: X is N or C—R, wherein R is H or a C1-C40 alkyl group, R2, at each occurrence, is independently selected from H, a C1-40 alkyl group, a C2-40 alkenyl group, a C1-40 haloalkyl group, and a monocyclicor polycyclic moiety, wherein: each of the C1-40 alkyl group, the C2-40 alkenyl group, and the C1-40 haloalkyl group can be optionally substituted with 1-10 substituents independently selected from a halogen, CN, —NO2, OH, NH2, —NH(C1-20 alkyl), N(C1-20 alkyl)2, —S(O)2OH, —CHO, —C(O)—C1-20 alkyl, —C(O)OH, —C(O)—OC1-20 alkyl, —C(O)NH2, —C(O)NH—C1-20 alkyl, —C(O)N(C1-20 alkyl)2, —OC1-20 alkyl, —SiH3, —SiH(C1-20 alkyl)2, —SiH2(C1-20 alkyl), and —Si(C1-20 alkyl)3; and the monocyclic or polycyclic moiety can be covalently bonded to the imide nitrogen via an optional linker, and can be optionally substituted with 1-5 substituentsindependently selected from a halogen, oxo, —CN, —NO2, OH,

Abstract: Disclosed are new semiconductor materials prepared from dimeric perylene compounds. Such compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Abstract: Provided are semiconductors prepared from an enantiomerically enriched mixture of a nitrogen-functionalized rylene bis(dicarboximide) compound. Specifically, the enantiomerically enriched mixture has unexpected electron-transport efficiency compared to the racemate or either of the enantiomers in optically pure form.

Abstract: Disclosed are new semiconductor materials prepared from naphthalene-imide copolymers. Such polymers can exhibit desirable electronic properties and can possess processing advantages including solution-processability and/or good stability at ambient conditions.

Abstract: A polymer comprising repeating units A and optionally repeating units B wherein Z=S, Se, N—R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1-4 Ra groups; Y, at each occurrence, is independently a divalent C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; c is from 1 to 6.

Abstract: The present invention provides semiconducting compounds, oligomers and polymers of formula wherein A1 and A2 can be the same or different and are S or Se, E is selected from the group consisting of The compounds, oligomers and polymers of formula of formula (1) are suitable for use in electronic devices such as organic field effect transistors.

Abstract: The present invention provides a polymer comprising a unit of formula and an electronic device comprising the polymer as semiconducting material.