Abstract: An electrical arrangement for protection in a direct current electric system includes an input connection, positive and negative input terminals, an output connection with positive and negative output terminals, and a stepping converting component with a switching topology with first and second positive connectors and a ground connector. A first switch is between the first and second positive connectors, and a second switch is between the second positive connector and the ground connector. The negative input terminal and the negative output terminal connect via the ground connector. The one switching topology is connected to the positive input terminal, the positive output terminal, and to the interconnected negative input and output terminals. The stepping converting component provides an operation switching mode for normal operation of the direct current electric system and to provide an overcurrent switching mode for overcurrent operation of the direct current electric system.

Abstract: An inductive component comprising an inductive element comprising a stack of an outer plurality of first strips of magnetic material, a central plurality of second strips of superconducting material, and an outer plurality of third strips of magnetic material, the inductive element being flexible and configured to form at least one loop of said stack of first strips, second strips and third strips, wound on itself. Also an inductive device and an aircraft with such an inductive component or device.

Abstract: Use of cryogenic fuel tanks for the cooling of power electronics circuits to improve cooling capabilities for power electronics in vehicles or an aircraft. The power electronics circuit can be cooled via a cryogenic cooling loop by the fuel directly, or the fuel is used to cool a separated coolant tank. A control valve controls the coolant flow within the cryogenic cooling loop based on an electrical property of the power switching element of the power electronics circuit and or based on the way the power switching elements are electrically connected together. The control valve can control the coolant flow such that a junction temperature is achieved which minimizes the drain-source resistance.

Abstract: An overcurrent protection circuit and a protection method for fast switching semiconductors includes a semiconductor switch unit having one or more semiconductor switches, a resistor element which generates a voltage signal depending on a current through the semiconductor switch unit, an amplification unit which amplifies the voltage signal, a comparator unit which compares the amplified voltage signal with a threshold value, and which generates a disable signal when the amount of the amplified voltage signal is greater than the threshold value. A switching device is switching off the semiconductor switch unit when the switching device receives the disable signal.

Abstract: An electronic circuit comprising a power transistor of the MOSFET type comprising a gate connected to a control circuit of the gate. The control circuit of the gate configured to operate at a temperature called ambient temperature, non-cryogenic. The power transistor as well as an interfacing circuit connected between said gate and said control circuit configured to operate at a cryogenic temperature. Each component of the interfacing circuit established at a maximum distance (L) from the power transistor. At least one measurement means configured to measure at least one measurement signal, representative of a junction temperature of the power transistor, is connected between the interfacing circuit operating at a cryogenic temperature and the control circuit operating at ambient temperature.

Abstract: An electronic component with a substrate connected a plurality of connection pins and on one face of which is affixed an electronic die fixing layer, and at least one electronic die assembled on said electronic die fixing layer. The electronic component includes a first heat exchanger and a layer of thermally conductive and electrically insulating material arranged in contact with said substrate. The first heat exchanger receives a circulating cryogenic fluid, and the electronic die, the electronic die fixing layer, the substrate, and the layer of thermally conductive and electrically insulating material as well as one end of each of said connection pins are enveloped in a volume of electrically insulating material at cryogenic temperature.

Abstract: A circuit breaker with pre-charging and current limiting functions, wherein the circuit breaker is configured for being provided in a power line connecting an electrical energy source and an electric network. The circuit breaker includes a short circuit protection unit including a first semiconductor switch, a precharge unit connected in parallel to the short circuit protection unit and including a second semiconductor switch, and a current limit unit connected in parallel to the short circuit protection unit and to the precharge unit, the current limit unit including a third semiconductor switch.

Abstract: A system for estimating junction temperatures of a power semiconductor module includes a constant current source to apply constant drain current to a drain terminal of a power semiconductor device, an adjustable gate voltage source to apply a gate voltage signal to a gate terminal, a drain-source voltage sensor between the drain terminal and the source terminal and configured to measure a value of the current drain-source voltage across the power semiconductor device and output a corresponding drain-source voltage signal, a gate controller to determine a difference between the drain-source voltage signal and a constant reference voltage and control output of the adjustable gate voltage source dependent on the determined difference, and a system controller to switch the power semiconductor device to its fully conducting state and to estimate junction temperature within the power semiconductor device in dependency from the on-state resistance in the fully conducting state.

Abstract: To enable early detection of AC insulation faults, or to permit easier, faster and more accurate measurement of small currents in inverters, a current measuring circuit for a converter is provided. The current measuring circuit has a positive supply rail, a negative supply rail, a reference potential rail and a current measuring device that contains a Y-capacitor and a current sensor connected in series therewith. The load current can be decoupled from the measurement current through the at least one Y-capacitor, so that at high load currents even small fault currents can be acquired reliably with the current sensor.

Abstract: A printed circuit board for transmitting electrical energy and for signal transmission includes electrical conductor tracks coupled to the printed circuit board wherein the electrical conductor tracks include a first electrical conductor track with a superconducting material. The first electrical conductor track is designed to provide electrical energy directly to a power electronics system. The electrical conductor tracks include a second electrical conductor track which is designed to provide a signal transmission to a signal electronics system. A system is disclosed having such a printed circuit board.

Abstract: A system for estimating junction temperatures of a power semiconductor module includes a constant current source to apply constant drain current to a drain terminal of a power semiconductor device, an adjustable gate voltage source to apply a gate voltage signal to a gate terminal, a drain-source voltage sensor between the drain terminal and the source terminal and configured to measure a value of the current drain-source voltage across the power semiconductor device and output a corresponding drain-source voltage signal, a gate controller to determine a difference between the drain-source voltage signal and a constant reference voltage and control output of the adjustable gate voltage source dependent on the determined difference, and a system controller to switch the power semiconductor device to its fully conducting state and to estimate junction temperature within the power semiconductor device in dependency from the on-state resistance in the fully conducting state.

Abstract: A system for determining thermal resistance of a power semiconductor includes a constant current source to apply a constant drain current to a drain terminal of the power semiconductor device, an adjustable gate voltage source to apply a gate voltage signal to a gate terminal of the power semiconductor device, a drain-source voltage sensor coupled between the drain terminal and the source terminal to measure a value of the current drain-source voltage across the power semiconductor device and to output a corresponding drain-source voltage signal, a gate controller to determine a difference between the drain-source voltage signal and a constant reference voltage and to control the output of the adjustable gate voltage source dependent on the determined difference, and a system controller to determine a thermal resistance of the power semiconductor device on the basis of the applied drain current and the measured drain-source voltage.