Abstract: The invention relates to a radiation detector element (10) comprising a stack (15) of layers superimposed in a stacking direction (Z), the stack (15) having a first face (25) and a second face (30) and comprising a radiation-absorbing layer (35) consisting of a first semiconductor material (M1) having a first band gap value and at least one barrier layer (40) consisting of a second semiconductor material (M2) having a second band gap value, the second band gap value being strictly higher than the first band gap value. The second face (30) has at least one strip (105) defined in the stacking direction (Z) by the barrier layer (40), the strip (105) consisting of the second semiconductor material (M2) and having a doping of the first type and a free carrier density higher than or equal to 1.1017 cm?3.

Abstract: Disclosed is a radiation detector element including a stack of layers superimposed in a stacking direction, the stack having a first face and a second face and including a radiation-absorbing layer consisting of a first semiconductor material having a first band gap value and at least one barrier layer consisting of a second semiconductor material having a second band gap value, the second band gap value being strictly greater than the first band gap value. The stack further delimits a primary hole traversing each of the layers of the stack, the primary hole receiving at least part of a primary electrode. The barrier layer includes a first conducting zone having a free carrier density greater than or equal to 1.1017/cm?3.

Abstract: Disclosed is a radiation detector element including a stack of layers superimposed in a stacking direction, the stack having a first face and a second face and including a radiation-absorbing layer consisting of a first semiconductor material having a first band gap value and at least one barrier layer consisting of a second semiconductor material having a second band gap value, the second band gap value being strictly greater than the first band gap value. The stack further delimits a primary hole traversing each of the layers of the stack, the primary hole receiving at least part of a primary electrode. The barrier layer includes a first conducting zone having a free carrier density greater than or equal to 1.1017/cm?3.

Abstract: The invention relates to a radiation detector element (10) comprising a stack (15) of layers superimposed in a stacking direction (Z), the stack (15) having a first face (25) and a second face (30) and comprising a radiation-absorbing layer (35) consisting of a first semiconductor material (M1) having a first band gap value and at least one barrier layer (40) consisting of a second semiconductor material (M2) having a second band gap value, the second band gap value being strictly higher than the first band gap value. The second face (30) has at least one strip (105) defined in the stacking direction (Z) by the barrier layer (40), the strip (105) consisting of the second semiconductor material (M2) and having a doping of the first type and a free carrier density higher than or equal to 1.1017 cm?3.