Patents by Inventor Florian STOERMER

Florian STOERMER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11959180
    Abstract: An anticorrosion coating and an article coated with an anticorrosion coating, especially for use in an aircraft, and a method of producing a coated article and a vehicle, especially an aircraft, including an anticorrosion coating or at least one such coated article. An anticorrosion coating includes an aluminum alloy having 0.03-0.5% by weight of tin. A coated article produced at least partly from a material and having at least partly been coated with the anticorrosion coating including an aluminum alloy having 0.03-0.5% by weight of tin. A method of producing the anticorrosion coating is also disclosed.
    Type: Grant
    Filed: March 16, 2021
    Date of Patent: April 16, 2024
    Assignees: Airbus Operations GmbH, Airbus Defence and Space GmbH
    Inventors: Carsten Blawert, Florian Gehrig, Tillmann Doerr, Bettina Kröger-Kallies, Oliver Rohr, Mikhail Zheludkevich, Maria del Rosario Silva Campos, Michael Störmer
  • Patent number: 11588048
    Abstract: In an example, a semiconductor device includes an insulated gate transistor cell, a first region (e.g., a drain region and/or a drift region), a cathode region, a second region (e.g., an anode region and/or a separation region), and a source electrode. The insulated gate transistor cell includes a source region and a gate electrode. The source region and the cathode region are in a silicon carbide body. The gate electrode and the cathode region are electrically connected. The cathode region, the source region, and the first region have a first conductivity type. The second region has a second conductivity type and is between the cathode region and the first region. The source electrode and the source region are electrically connected. The source electrode and the second region are in contact with each other. A rectifying junction is electrically coupled between the source electrode and the cathode region.
    Type: Grant
    Filed: February 26, 2021
    Date of Patent: February 21, 2023
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Thomas Basler, Hans-Guenter Eckel, Jan Fuhrmann, Dethard Peters, Florian Stoermer
  • Publication number: 20210273088
    Abstract: In an example, a semiconductor device includes an insulated gate transistor cell, a first region (e.g., a drain region and/or a drift region), a cathode region, a second region (e.g., an anode region and/or a separation region), and a source electrode. The insulated gate transistor cell includes a source region and a gate electrode. The source region and the cathode region are in a silicon carbide body. The gate electrode and the cathode region are electrically connected. The cathode region, the source region, and the first region have a first conductivity type. The second region has a second conductivity type and is between the cathode region and the first region. The source electrode and the source region are electrically connected. The source electrode and the second region are in contact with each other. A rectifying junction is electrically coupled between the source electrode and the cathode region.
    Type: Application
    Filed: February 26, 2021
    Publication date: September 2, 2021
    Inventors: Thomas BASLER, Hans-Guenter ECKEL, Jan FUHRMANN, Dethard PETERS, Florian STOERMER