Abstract: A template, stamp or mold is fabricated by using a low-k material. The structure of the low-k material is transformed when it is baked in a novel heating process. Thus, the template is fabricated to obtain a high hardness and a high aspect-ratio with a low dose of electron beam lithography and an optimized baking process. Consequently, the residual; layer at photoresist bottom is reduced and the time for reactive ion etching is saved. In the end, the stability and the integrity is improved. Hence, the present invention is a solution for fabricating a template, stamp or mold with the feature size from sub-micrometer down to nanometer level.

Abstract: The present invention first obtains a nano-metal line by an e-beam lithography and an electroless plating, and imprints the line into a material with low-K to obtain a damascene metal line with low cost and high throughput, as a future solution for a metallization process for a general low-K metal damascene structure through CMP.

Abstract: A novel method of Cu seed layer deposition for ULSI metalization is disclosed. The method of Cu seed layer deposition for ULSI metalization comprises forming a diffusion barrier on a substrate, forming a poly silicon layer, amorphous silicon layer or TaSix layer on said diffusion barrier, replacing said poly silicon layer with copper to form a copper seed layer, and electroplating a thick copper film on said copper seed layer. In this invention, a chemical replacing solution comprising a replacing reactant and at least one etchant is used to replace the poly silicon layer with copper and to reduce the quantity of byproducts of the reaction.

Abstract: A novel method of Cu seed layer deposition for ULSI metalization is disclosed. The method of Cu seed layer deposition for ULSI metalization comprises forming a diffusion barrier on a substrate, forming a poly silicon layer, amorphous silicon layer or TaSix layer on said diffusion barrier, replacing said poly silicon layer with copper to form a copper seed layer, and electroplating a thick copper film on said copper seed layer. In this invention, a chemical replacing solution comprising a replacing reactant and at least one etchant is used to replace the poly silicon layer with copper and to reduce the quantity of byproducts of the reaction.