Patents by Inventor Fong-Cheng Lee

Fong-Cheng Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of lithography
    Patent number: 9005881
    Abstract: A lithography method of manufacturing integrated circuits is disclosed. A combination photoalignment-photoresist layer is formed on a substrate. A treatment is performed on the combination photoalignment-photoresist layer. The combination photoalignment-photoresist layer is exposed to a predetermined pattern. The combination photoalignment-photoresist layer is developed to form a pattern and expose a portion of the substrate.
    Type: Grant
    Filed: November 22, 2013
    Date of Patent: April 14, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fong-Cheng Lee, Ching-Yu Chang
  • METHOD OF LITHOGRAPHY
    Publication number: 20140080065
    Abstract: A lithography method of manufacturing integrated circuits is disclosed. A combination photoalignment-photoresist layer is formed on a substrate. A treatment is performed on the combination photoalignment-photoresist layer. The combination photoalignment-photoresist layer is exposed to a predetermined pattern. The combination photoalignment-photoresist layer is developed to form a pattern and expose a portion of the substrate.
    Type: Application
    Filed: November 22, 2013
    Publication date: March 20, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fong-Cheng LEE, Ching-Yu CHANG
  • Method of lithography
    Patent number: 8609325
    Abstract: A lithography method of manufacturing integrated circuits is disclosed. A photoalignment layer is formed on a substrate. A treatment is performed to reorganize and align the photoalignment molecules. A photoresist layer may be formed on the photoalignment layer in a bi-layer separate coating or with the photoalignment layer in a bound-bind structure.
    Type: Grant
    Filed: October 29, 2010
    Date of Patent: December 17, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fong-Cheng Lee, Ching-Yu Chang
  • Method and photoresist with zipper mechanism
    Patent number: 8323870
    Abstract: The present disclosure provides a resist utilized in a photolithography patterning process. The resist includes a polymeric material having a plurality of zipper molecules, each including a first zipper portion and a second zipper portion, wherein the first and second zipper portions each include a plurality of zipper branches bonded together in pairs and cleavable to one of thermal energy, radiation energy, and chemical reaction.
    Type: Grant
    Filed: November 1, 2010
    Date of Patent: December 4, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fong-Cheng Lee, Ching-Yu Chang
  • METHOD OF LITHOGRAPHY
    Publication number: 20120107747
    Abstract: A lithography method of manufacturing integrated circuits is disclosed. A photoalignment layer is formed on a substrate. A treatment is performed to reorganize and align the photoalignment molecules. A photoresist layer may be formed on the photoalignment layer in a bi-layer separate coating or with the photoalignment layer in a bound-bind structure.
    Type: Application
    Filed: October 29, 2010
    Publication date: May 3, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fong-Cheng LEE, Ching-Yu CHANG
  • METHOD AND PHOTORESIST WITH ZIPPER MECHANISM
    Publication number: 20120107742
    Abstract: The present disclosure provides a resist utilized in a photolithography patterning process. The resist includes a polymeric material having a plurality of zipper molecules, each including a first zipper portion and a second zipper portion, wherein the first and second zipper portions each include a plurality of zipper branches bonded together in pairs and cleavable to one of thermal energy, radiation energy, and chemical reaction.
    Type: Application
    Filed: November 1, 2010
    Publication date: May 3, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fong-Cheng Lee, Ching-Yu Chang