Abstract: A semiconductor device includes a substrate having a first conductive layer disposed on a top surface of the substrate. A first insulation layer is formed over the substrate and contacts a sidewall of the first conductive layer. A second conductive layer is formed over the first insulation layer. The second conductive layer includes a first portion disposed over the first conductive layer and a second portion that extends beyond an end of the first conductive layer. A second insulation layer is formed over the second conductive layer. A first opening in the second insulation layer exposes the first portion of the second conductive layer. A second opening in the second insulation layer away from the first opening exposes the second portion of the second conductive layer. The second insulation layer is maintained around the first opening. A conductive bump is formed over the first portion of the second conductive layer.

Abstract: One or more electronic components can be mounted on the back side of a semiconductor die. The components can be passive components, active components, or combinations thereof. The components can be soldered to signal routes on the back side of the die, the signal routes being attached to the die using a metallization layer or using one or more dielectric layer sections. Placing components on the back side of the die can allow for incorporation of the components without necessarily increasing the form factor of the die's package.

Abstract: A semiconductor device includes a substrate having a first conductive layer disposed on a top surface of the substrate. A first insulation layer is formed over the substrate and contacts a sidewall of the first conductive layer. A second conductive layer is formed over the first insulation layer. The second conductive layer includes a first portion disposed over the first conductive layer and a second portion that extends beyond an end of the first conductive layer. A second insulation layer is formed over the second conductive layer. A first opening in the second insulation layer exposes the first portion of the second conductive layer. A second opening in the second insulation layer away from the first opening exposes the second portion of the second conductive layer. The second insulation layer is maintained around the first opening. A conductive bump is formed over the first portion of the second conductive layer.

Abstract: A semiconductor package includes a substrate having a bond pad disposed on a top surface of the substrate. A first passivation layer is formed over the substrate and bond pad. The first passivation layer has an opening to expose the bond pad. An under bump metallurgy is formed over the first passivation layer. An end of the under bump metallurgy extends beyond an end of the bond pad. A second passivation layer is formed over the under bump metallurgy. The second passivation layer has a first opening to expose a first surface of the under bump metallurgy, and a second opening which is etched to expose a second surface of the under bump metallurgy. A solder ball is attached to the first surface of the under bump metallurgy to provide electrical connectivity. The second opening in the second passivation layer receives a probe needle to test the semiconductor device.

Abstract: A semiconductor package includes a leadframe, an elevated die paddle disposed above the leadframe, a first die attached to a lower surface of the elevated die paddle to support the first die within the semiconductor package, and a second die attached to the first die. A method of manufacturing a semiconductor package includes providing a leadframe having a lower lead and an elevated die paddle structure, attaching a first die to the elevated die paddle structure with a die adhesive (DA) for supporting the first die within the semiconductor package, and wire bonding the first die to the lower lead.

Abstract: A semiconductor package includes a leadframe. An upper lead is disposed above the leadframe. A first die is attached to a lower surface of the upper lead to provide electrical conductivity from the first die to the upper lead. A second die is attached to the first die. A method of manufacturing a semiconductor package includes providing a leadframe having an upper lead, lower lead, and an elevated die paddle. A first die, attached to a plurality of dies in a wafer form, is attached to a second die. The first die is singulated from the plurality of dies. The first and second dies are attached to the elevated die paddle structure. The first die is wire bonded to the lower lead. An encapsulant is formed over the first and second dies. The elevated die paddle is removed to expose a surface of the upper lead and second die.

Abstract: One or more electronic components can be mounted on the back side of a semiconductor die. The components can be passive components, active components, or combinations thereof. The components can be soldered to signal routes on the back side of the die, the signal routes being attached to the die using a metallization layer or using one or more dielectric layer sections. Placing components on the back side of the die can allow for incorporation of the components without necessarily increasing the form factor of the die's package.

Abstract: One or more electronic components can be mounted on the back side of a semiconductor die. The components can be passive components, active components, or combinations thereof. The components can be soldered to signal routes on the back side of the die, the signal routes being attached to the die using a metallization layer or using one or more dielectric layer sections. Placing components on the back side of the die can allow for incorporation of the components without necessarily increasing the form factor of the die's package.

Abstract: A semiconductor package includes a leadframe, an elevated die paddle disposed above the leadframe, a first die attached to a lower surface of the elevated die paddle to support the first die within the semiconductor package, and a second die attached to the first die. A method of manufacturing a semiconductor package includes providing a leadframe having a lower lead and an elevated die paddle structure, attaching a first die to the elevated die paddle structure with a die adhesive (DA) for supporting the first die within the semiconductor package, and wire bonding the first die to the lower lead.

Abstract: A semiconductor package includes a leadframe, an elevated die paddle disposed above the leadframe, a first die attached to a lower surface of the elevated die paddle to support the first die within the semiconductor package, and a second die attached to the first die. A method of manufacturing a semiconductor package includes providing a leadframe having a lower lead and an elevated die paddle structure, attaching a first die to the elevated die paddle structure with a die adhesive (DA) for supporting the first die within the semiconductor package, and wire bonding the first die to the lower lead.

Abstract: One or more electronic components can be mounted on the back side of a semiconductor die. The components can be passive components, active components, or combinations thereof. The components can be soldered to signal routes on the back side of the die, the signal routes being attached to the die using a metallization layer or using one or more dielectric layer sections. Placing components on the back side of the die can allow for incorporation of the components without necessarily increasing the form factor of the die's package.

Abstract: A semiconductor package includes a substrate having a bond pad disposed on a top surface of the substrate. A first passivation layer is formed over the substrate and bond pad. The first passivation layer has an opening to expose the bond pad. An under bump metallurgy is formed over the first passivation layer. An end of the under bump metallurgy extends beyond an end of the bond pad. A second passivation layer is formed over the under bump metallurgy. The second passivation layer has a first opening to expose a first surface of the under bump metallurgy, and a second opening which is etched to expose a second surface of the under bump metallurgy. A solder ball is attached to the first surface of the under bump metallurgy to provide electrical connectivity. The second opening in the second passivation layer receives a probe needle to test the semiconductor device.

Abstract: A semiconductor package includes a leadframe. An upper lead is disposed above the leadframe. A first die is attached to a lower surface of the upper lead to provide electrical conductivity from the first die to the upper lead. A second die is attached to the first die. A method of manufacturing a semiconductor package includes providing a leadframe having an upper lead, lower lead, and an elevated die paddle. A first die, attached to a plurality of dies in a wafer form, is attached to a second die. The first die is singulated from the plurality of dies. The first and second dies are attached to the elevated die paddle structure. The first die is wire bonded to the lower lead. An encapsulant is formed over the first and second dies. The elevated die paddle is removed to expose a surface of the upper lead and second die.

Abstract: A semiconductor package includes a leadframe, an elevated die paddle disposed above the leadframe, a first die attached to a lower surface of the elevated die paddle to support the first die within the semiconductor package, and a second die attached to the first die. A method of manufacturing a semiconductor package includes providing a leadframe having a lower lead and an elevated die paddle structure, attaching a first die to the elevated die paddle structure with a die adhesive (DA) for supporting the first die within the semiconductor package, and wire bonding the first die to the lower lead.