Patents by Inventor Francis J. Kub
Francis J. Kub has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9685513Abstract: Semiconductor devices that include a semiconductor structure integrated with one or more diamond material layers. A first diamond material layer is formed on a bottom surface and optionally, the side surfaces of the semiconductor structure. In some embodiments, at least a portion of the semiconductor structure is embedded in the diamond. An electrical device can be formed on a top surface of the semiconductor structure. A second diamond material layer can be formed on the top surface of the semiconductor structure. The semiconductor structure can include a III-nitride material such as GaN, which can be embedded within a the first diamond material layer or encased by the first and/or second diamond material layer.Type: GrantFiled: October 23, 2013Date of Patent: June 20, 2017Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Francis J. Kub, Travis J. Anderson, Karl D. Hobart
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Patent number: 9679766Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.Type: GrantFiled: May 20, 2016Date of Patent: June 13, 2017Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr., Nelson Garces
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Publication number: 20170125557Abstract: A method of making a graphene base transistor with reduced collector area comprising forming an electron injection region, forming an electron collection region, and forming a base region wherein the base region comprises one or more sheets of graphene and wherein the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces therewith.Type: ApplicationFiled: January 18, 2017Publication date: May 4, 2017Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Francis J. Kub, Travis J. Anderson, Andrew D. Koehler
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Publication number: 20170073276Abstract: A method for making transparent nanocomposite ceramics and other solid bulk materials from nanoparticle powders and transparent nanocomposite ceramics and other solid bulk materials formed using that method. A nanoparticle powder is placed into a reaction chamber and is treated to produce a clean surface powder. The clean surface powder is coated with a second material by means of p-ALD to produce core/shell or core multi shell nanoparticles having a coating or coatings of a other material surrounding the nanoparticle. The core/shell nanoparticles are cleaned and formed into green compact which is sintered to produce a transparent nanocomposite ceramic or other solid bulk material consisting of nanoparticles or core/shell nanoparticles uniformly embedded in a matrix of a different material, particularly in a matrix of a different ceramic material, formed by outer shell of initial core/shell. All steps are performed without exposing the material to the ambient.Type: ApplicationFiled: September 9, 2016Publication date: March 16, 2017Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Boris N. Feigelson, James A. Wollmershauser, Kedar Manandhar, Francis J. Kub
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Patent number: 9590081Abstract: A method of making a graphene base transistor with reduced collector area comprising forming a graphene material layer, forming a collector material, depositing a dielectric, planarizing the dielectric, cleaning and removing the native oxide, transferring a base graphene material layer to the top surface of the graphene material layer, bonding the base graphene material layer, and photostepping and defining a second graphene material layer. A method of making a graphene base transistor with reduced collector area comprising forming an electron injection region, forming an electron collection region, and forming a base region. A graphene base transistor with reduced collector area comprising an electron emitter region, an electron collection region, and a base region.Type: GrantFiled: November 25, 2015Date of Patent: March 7, 2017Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Francis J. Kub, Travis J. Anderson, Andrew D. Koehler
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Patent number: 9543168Abstract: A symmetric multicycle rapid thermal annealing (SMRTA) method for annealing a semiconductor material without the material decomposing. The SMRTA method includes a first long-time annealing at a first temperature at which the material is thermodynamically stable, followed by multicycle rapid thermal annealing (MRTA) at temperatures at which the material is not thermodynamically stable, followed in turn by a second long-time annealing at a second temperature at which the material is thermodynamically stable. The SMRTA method can be used to form p-type and n-type semiconductor regions in doped III-nitride semiconductors, SiC, and diamond.Type: GrantFiled: February 4, 2016Date of Patent: January 10, 2017Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Boris N. Feigelson, Jordan Greenlee, Travis J. Anderson, Francis J. Kub
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Publication number: 20160341552Abstract: According to one aspect, embodiments herein provide a gyroscope comprising an axially symmetric structure, and a plurality of transducers, each configured to perform at least one of driving and sensing motion of the axially symmetric structure, wherein the plurality of transducers is configured to drive the axially symmetric structure in at least a first vibratory mode and a second vibratory mode, and wherein the gyroscope is implemented on a hexagonal crystal-based substrate.Type: ApplicationFiled: May 20, 2016Publication date: November 24, 2016Inventors: Francis J. Kub, Karl D. Hobart, Eugene Imhoff, Rachael Myers-Ward, Eugene H. Cook, Marc S. Weinberg, Jonathan J. Bernstein
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Publication number: 20160336171Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.Type: ApplicationFiled: May 20, 2016Publication date: November 17, 2016Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, JR., Nelson Garces
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Patent number: 9490356Abstract: Methods for forming a high-quality III-nitride passivation layer on an AlGaN/GaN HEMT. A III-nitride passivation layer is formed on the surface of an AlGaN/GaN HEMT by means of atomic layer epitaxy (ALE), either before or after deposition of a gate metal electrode on the AlGaN barrier layer. Depending on the gate metal and/or the passivation material used, the III-nitride passivation layer can be formed by ALE at temperatures between about 300° C. and about 85020 C. In a specific embodiment, the III-nitride passivation layer can be an AlN layer formed by ALE at about 550° C. after deposition of a Schottky metal gate electrode. The III-nitride passivation layer can be grown so as to conformally cover the entire device, providing a hermetic seal that protects the against environmental conditions.Type: GrantFiled: March 25, 2016Date of Patent: November 8, 2016Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Andrew D. Koehler, Travis J. Anderson, Karl D. Hobart, Francis J. Kub
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Publication number: 20160233108Abstract: A symmetric multicycle rapid thermal annealing (SMRTA) method for annealing a semiconductor material without the material decomposing. The SMRTA method includes a first long-time annealing at a first temperature at which the material is thermodynamically stable, followed by multicycle rapid thermal annealing (MRTA) at temperatures at which the material is not thermodynamically stable, followed in turn by a second long-time annealing at a second temperature at which the material is thermodynamically stable. The SMRTA method can be used to form p-type and n-type semiconductor regions in doped III-nitride semiconductors, SiC, and diamond.Type: ApplicationFiled: February 4, 2016Publication date: August 11, 2016Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Boris N. Feigelson, Jordan Greenlee, Travis J. Anderson, Francis J. Kub
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Patent number: 9396941Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.Type: GrantFiled: September 19, 2011Date of Patent: July 19, 2016Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr., Nelson Garces
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Publication number: 20160204222Abstract: Methods for forming a high-quality III-nitride passivation layer on an AlGaN/GaN HEMT. A III-nitride passivation layer is formed on the surface of an AlGaN/GaN HEMT by means of atomic layer epitaxy (ALE), either before or after deposition of a gate metal electrode on the AlGaN barrier layer. Depending on the gate metal and/or the passivation material used, the III-nitride passivation layer can be formed by ALE at temperatures between about 300° C. and about 85020 C. In a specific embodiment, the III-nitride passivation layer can be an AlN layer formed by ALE at about 550° C. after deposition of a Schottky metal gate electrode. The III-nitride passivation layer can be grown so as to conformally cover the entire device, providing a hermetic seal that protects the against environmental conditions.Type: ApplicationFiled: March 25, 2016Publication date: July 14, 2016Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Andrew D. Koehler, Travis J. Anderson, Karl D. Hobart, Francis J. Kub
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Publication number: 20160120472Abstract: An implantable device includes a circuit protected with a low dissolution rate layer, wherein the circuit is either (a) fully encapsulated by the low dissolution rate layer and configured for non-electrical conduction contact sensing (e.g., capacitive sensing) or (b) partially encapsulated by the low dissolution rate layer with an electrode at least partially exposed outside the layer; wherein the implantable device is suitable for implantation inside the body of a living animal; and wherein the low dissolution rate layer comprises an element selected from the group consisting of gallium, boron, nitrogen, oxygen, zirconium, aluminum, and titanium. Such devices can be made by lithographic and other means, with coating layers applied by atomic layer deposition.Type: ApplicationFiled: October 30, 2015Publication date: May 5, 2016Inventors: Francis J. Kub, Charles R. Eddy, JR., Virginia D. Wheeler
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Patent number: 9327982Abstract: Methods of forming a graphene material on a surface are presented. A metal material is disposed on a material substrate or material layer and is infused with carbon, for example, by exposing the metal to a carbon-containing vapor. The carbon-containing metal material is annealed to cause graphene to precipitate onto the bottom of the metal material to form a graphene layer between the metal material and the material substrate/material layer and also onto the top and/or sides of the metal material. Graphene material is removed from the top and sides of the metal material and then the metal material is removed, leaving only the graphene layer that was formed on the bottom of the metal material. In some cases graphene material that formed on one or more side of the sides of the metal material is not removed so that a vertical graphene material layer is formed.Type: GrantFiled: March 5, 2013Date of Patent: May 3, 2016Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Francis J. Kub, Travis Anderson, Boris N. Feygelson
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Publication number: 20160087087Abstract: A method of making a graphene base transistor with reduced collector area comprising forming a graphene material layer, forming a collector material, depositing a dielectric, planarizing the dielectric, cleaning and removing the native oxide, transferring a base graphene material layer to the top surface of the graphene material layer, bonding the base graphene material layer, and photostepping and defining a second graphene material layer. A method of making a graphene base transistor with reduced collector area comprising forming an electron injection region, forming an electron collection region, and forming a base region. A graphene base transistor with reduced collector area comprising an electron emitter region, an electron collection region, and a base region.Type: ApplicationFiled: November 25, 2015Publication date: March 24, 2016Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Francis J. Kub, Travis J. Anderson, Andrew D. Koehler
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Patent number: 9275998Abstract: An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride grown epitaxially on a substrate, a barrier, a two-dimensional hole gas in the barrier layer material at the heterointerface of the first material, and wherein the gallium-polar III-Nitride material comprises III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face of a substrate so that the gallium-polar (0001) face is the dominant face for growth of III-Nitride epitaxial layer growth material, growing a GaN epitaxial layer, doping, growing a barrier, etching, forming a contact, performing device isolation, defining a gate opening, defining gate metal, making a contact window, and depositing and defining a thick metal.Type: GrantFiled: April 29, 2014Date of Patent: March 1, 2016Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Francis J. Kub, Travis J. Anderson, Andrew D. Koehler, Karl D. Hobart
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Patent number: 9246305Abstract: A light-emitting device having one or more diamond layers integrated therein and methods for forming a light-emitting device with integrated diamond layers. The diamond is grown either directly on the semiconductor material comprising the light-emitting structure, on a nucleation layer deposited on the semiconductor material, or on a dielectric layer deposited on the semiconductor material before growth of the diamond layer. The device can include a trench or thermal shunt formed in the substrate on the backside of the device, or can include a heat sink to provide additional thermal management.Type: GrantFiled: March 20, 2015Date of Patent: January 26, 2016Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Francis J. Kub, Travis J. Anderson, Karl D. Hobart
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Patent number: 9236432Abstract: A graphene base transistor with reduced collector area comprising an electron injection region, an electron collection region, and a base region wherein the base region comprises one or more sheets of graphene and wherein the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces therewith. A method of making a graphene base transistor with reduced collector area comprising forming an electron injection region, forming an electron collection region, and forming a base region wherein the base region comprises one or more sheets of graphene and wherein the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces therewith.Type: GrantFiled: February 12, 2014Date of Patent: January 12, 2016Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Francis J. Kub, Travis J. Anderson, Andrew D. Koehler
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Publication number: 20150362763Abstract: A smart window comprising a transparent substrate, a transparent low emittance layer on the transparent substrate, a variable emittance material layer on the substrate or transparent low emittance layer, and a protection material layer on the variable emittance material layer.Type: ApplicationFiled: June 4, 2015Publication date: December 17, 2015Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Virginia D. Wheeler, Francis J. Kub, Charles R. Eddy, JR., Marko J. Tadjer
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Publication number: 20150362374Abstract: This disclosure describes a microbolometer sensor element and microbolometer array imaging devices optimized for infrared radiation detection that are enabled using atomic layer deposition (ALD) of vanadium oxide material layer (VOx) for a temperature sensitive resistor.Type: ApplicationFiled: June 3, 2015Publication date: December 17, 2015Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Virginia D. Wheeler, Francis J. Kub, Charles R. Eddy, JR., Marko J. Tadjer