Abstract: A device is provided to fasten a susceptor of a CVD reactor to a drive shaft, and by the device, the susceptor can be set into rotation. The device includes one or more of a base plate, a support plate, adjusting levers, and a flange element. The drive shaft carries the base plate, to which the support plate, which carries the susceptor, is fastened. The inclination of the support plate relative to the base plate can be adjusted by the adjusting levers. The support plate is connected to the flange element by a screw. A through opening aligned with the screw is closed with a plug.

Abstract: A CVD reactor includes a gas-tight and evacuatable reactor housing and an inner housing arranged therein. The inner housing has means for the infeed of a process gas and means for holding a substrate for treatment in the inner housing by means of the process gases. The inner housing also has a loading opening which can be closed off by a sealing element of a closure element. In its closure position, the closure element bears with an encircling sealing zone against a counterpart sealing zone which encircles the loading opening on the outer side of the inner housing. The sealing element is fastened to a carrier as to be adjustable in terms of inclination and/or pivotally movable about at least one spatial axis (X, Y, Z) and/or so as to be elastically deflectable in the direction of one of the spatial axes (X, Y, Z).

Abstract: A susceptor for a CVD reactor includes a flat circular disc-shaped body with channels that are arranged on a broad side of the disc-shaped body within one or more circular surface sections extending on a plane in order to transfer heat to a substrate holder. The channels run about respective centers of the one or more circular surface sections in a spiral manner and are formed as depressions that are open towards the plane. An end of each of the channels has a channel opening, the channel openings being fluidically connected to a feed opening arranged at the end of a gas supply line. Additionally, the one or more surface sections are equipped with one or more influencing elements that influence the local heat transfer and are formed as open depressions on the plane or as insert pieces that plug into the depressions.

Abstract: A susceptor arrangement for use in a CVD reactor includes a circular or annular susceptor with a first susceptor broad side, on which a substrate holder and at least one coveting element are arranged. At least one of the covering elements consists of multiple covering plates, in which a lowermost covering plate is adjacent to the first broad side face of the susceptor, and an uppermost covering plate covers the lowermost covering plate at least in certain regions and forms a free broad side face of the susceptor arrangement. The covering plates are preferably produced from silicon carbide, and are connected to one another by positioning elements.

Abstract: A III-V semiconductor layer is deposited using an apparatus comprising a process chamber, a susceptor for receiving one or more substrates to be coated, and a gas inlet element which comprises a plurality of process gas inlet zones. An etching gas inlet in the flow direction of the hydride and the MO compound opens into the process chamber downstream of the process gas inlet zones. A control device is adapted and the process gas inlet zones and the etching gas inlet are arranged such that the process gases cannot enter into the etching gas inlet during deposition of the semiconductor layer and the etching gas cannot enter into the process gas inlet zones during purification of the process chamber. The etching gas inlet is formed by an annular zone of the process chamber cover around the gas inlet element and by an annular fastening element for fastening a cover plate.

Abstract: A component made of a quartz blank is used as a component part of a CVD reactor. At least one cavity of the component is created by selective laser etching, wherein a fluid flows through the at least one cavity. When in use, the component is heated to temperatures in excess of 500° C., and comes into contact with hydrides of the main groups IV, V or VI and/or with organometallic compounds or halogenides of elements of the main groups II, III or V.

Abstract: A cover plate, for a CVD reactor, has a circumferential edge extending on a circular arc line, or a plurality of identically configured cover plates can be arranged in a circle such that their respective outer edges extending along circular arcs complement each other to form a complete circle. Storage spaces for substrates or substrate holders supporting substrates are located within the surface of the cover plate. The cover plate has openings which tunnel through the cover plate, and through which the upper side of a susceptor is visible, so that an optical temperature measurement can be carried out through the respective openings.

Abstract: A device is provided to fasten a susceptor of a CVD reactor to a drive shaft, by means of which the susceptor can be set into rotation. The device includes one or more of a base plate, a support plate, adjusting levers, and a flange element. The drive shaft carries the base plate, to which the support plate, which carries the susceptor, is fastened. The inclination of the support plate relative to the base plate can be adjusted by means of the adjusting levers. The support plate is connected to the flange element by means of a screw. A through opening aligned with the screw is closed with a plug.

Abstract: A CVD reactor includes a gas inlet element for introducing a process gas into a process chamber arranged between a process chamber cover and a susceptor. The gas inlet element contains at least one metal surface that comes into contact with the process gas. The metal surface has a passivation layer which prevents the metal surface from flaking due to exposure to one or more reactive gases. Cooling channels are arranged such that the passivation layer is maximally heated to 100° C. in a cleaning step in which chlorine is introduced into the process chamber and the susceptor is heated to at least 700° C. At the same time, the passivation layer is formed by chemically reacting a metal-organic compound with the metal atoms of the metal surface. The cleaning gas inlet openings are arranged such that the cleaning gas comes into contact with the metal surface that has the passivation layer.

Abstract: A CVD reactor includes a gas-tight and evacuatable reactor housing and an inner housing arranged therein. The inner housing has means for the infeed of a process gas and means for holding a substrate for treatment in the inner housing by means of the process gases. The inner housing also has a loading opening which can be closed off by a sealing element of a closure element. In its closure position, the closure element bears with an encircling sealing zone against a counterpart sealing zone which encircles the loading opening on the outer side of the inner housing. The sealing element is fastened to a carrier as to be adjustable in terms of inclination and/or pivotally movable about at least one spatial axis (X, Y, Z) and/or so as to be elastically deflectable in the direction of one of the spatial axes (X, Y, Z).

Abstract: A susceptor for a CVD reactor includes a flat circular disc-shaped body with channels that are arranged on a broad side of the disc-shaped body within one or more circular surface sections extending on a plane in order to transfer heat to a substrate holder. The channels run about respective centers of the one or more circular surface sections in a spiral manner and are formed as depressions that are open towards the plane. An end of each of the channels has a channel opening, the channel openings being fluidically connected to a feed opening arranged at the end of a gas supply line. Additionally, the one or more surface sections are equipped with one or more influencing elements that influence the local heat transfer and are formed as open depressions on the plane or as insert pieces that plug into the depressions.

Abstract: A III-V semiconductor layer is deposited using an apparatus comprising a process chamber, a susceptor for receiving one or more substrates to be coated, and a gas inlet element which comprises a plurality of process gas inlet zones. An etching gas inlet in the flow direction of the hydride and the MO compound opens into the process chamber downstream of the process gas inlet zones. A control device is adapted and the process gas inlet zones and the etching gas inlet are arranged such that the process gases cannot enter into the etching gas inlet during deposition of the semiconductor layer and the etching gas cannot enter into the process gas inlet zones during purification of the process chamber. The etching gas inlet is formed by an annular zone of the process chamber cover around the gas inlet element and by an annular fastening element for fastening a cover plate.

Abstract: A CVD reactor includes a gas inlet element for introducing a process gas into a process chamber arranged between a process chamber cover and a susceptor. The gas inlet element contains at least one metal surface that comes into contact with the process gas. The metal surface has a passivation layer which prevents the metal surface from flaking due to exposure to one or more reactive gases. Cooling channels are arranged such that the passivation layer is maximally heated to 100° C. in a cleaning step in which chlorine is introduced into the process chamber and the susceptor is heated to at least 700° C. At the same time, the passivation layer is formed by chemically reacting a metal-organic compound with the metal atoms of the metal surface. The cleaning gas inlet openings are arranged such that the cleaning gas comes into contact with the metal surface that has the passivation layer.

Abstract: The invention relates to a CVD reactor having a process chamber (23) and a substrate holder support (1) arranged therein, said support comprising at least one bearing surface (4), wherein a plurality of gas inlet lines (7, 8) open out into the bearing surface (4?). The CVD reactor further has a substrate holder (2), the back side thereof facing the bearing surface (4?), wherein the gases fed through the gas inlet lines (7,8) into the space between the bearing surface (4?) and back side form a gas cushion (19) supporting the substrate holder (2). According to the invention, the gas cushion comprises a plurality of zones (A, C) that each can be fed through an associated gas inlet line (7, 8) and that are separated from each other by a means (15) preventing gas exchange between the zones (A, C). At least one inner zone (C) is associated with a gas discharge line (13, 14), via which the gas fed into the inner zone (C) by way of the inlet line (7, 8) can be discharged.

Abstract: The invention relates to an apparatus for deposition of a III-V semiconductor layer comprising a process chamber (1), a susceptor (2) forming the base of the process chamber (1) for receiving one or more substrates to be coated, a heater (3) for heating the susceptor (2) to a process temperature and a gas inlet element (4) which comprises at least one first and one second process gas inlet zone (5, 6, 7), each for introducing process gases into the process chamber (1).

Abstract: The aim of the invention is to improve the automated loading of a susceptor with wafers. According to the invention a device for orienting a wafer on a wafer carrier (11) comprises a base element (2) on which to set the wafer carrier (11), wherein the base element (2) has a centering section (3), which interacts with a counter centering section (10) of the wafer carrier (11) in such a way that the wafer carrier (11) set onto the base element (2) assumes a predetermined position in relation to the base element (2), and comprising a centering element (1), which is arranged above the base element (2) and has a predetermined position in relation to the base element (2) and has an adjusting-element carrier (5), on which adjusting elements (6) are arranged in an arrangement corresponding to an outer contour of the wafer, in order to orient the wafer in a plane parallel to the supporting surface (11?) of the wafer carrier.

Abstract: The invention relates to a CVD reactor having a process chamber (23) and a substrate holder support (1) arranged therein, said support comprising at least one bearing surface (4), wherein a plurality of gas inlet lines (7, 8) open out into the bearing surface (4?). The CVD reactor further has a substrate holder (2), the back side thereof facing the bearing surface (4?), wherein the gases fed through the gas inlet lines (7,8) into the space between the bearing surface (4?) and back side form a gas cushion (19) supporting the substrate holder (2). According to the invention, the gas cushion comprises a plurality of zones (A, C) that each can be fed through an associated gas inlet line (7, 8) and that are separated from each other by a means (15) preventing gas exchange between the zones (A, C). At least one inner zone (C) is associated with a gas discharge line (13, 14), via which the gas fed into the inner zone (C) by way of the inlet line (7, 8) can be discharged.