Abstract: A method for manufacturing a photodetection device, which includes the following steps: making a cadmium-rich structured coating, over a substrate of CdxHg1-xTe, and using a first etching mask; etching to enlarge the through openings of the first etching mask or the through openings of an interlayer etched with the structured coating, so as to form a second etching mask; injecting acceptor doping elements into the substrate, throughout the second etching mask, and activating and diffusing the acceptor doping elements to form at least one P doped region in the semiconductor substrate; selective interdiffusion annealing of cadmium, so as to form in each P doped region a cadmium-rich concentrated well with a cadmium concentration lateral gradient; and making at least one electrical contact pad, at each through opening in the structured coating.

Abstract: A photodetection device includes a pixel matrix in which each pixel includes a barrier photodetector. The pixel matrix includes an absorption layer, a barrier layer, a contact layer, and at least one separation element to delimit the pixels. At least one separation element extends above the contact layer, and forms at least one depletion zone that extends locally in the contact layer, to block the lateral circulation of charge carriers.

Abstract: The invention relates to a method for manufacturing a first support (100) for forming, in particular with a functionalised second support (200), an optoelectronic component (1), the first support (100) comprising a semiconductor layer (110) and an alignment mark (140) provided on said semiconductor layer (110). The manufacturing method includes in particular a step of forming an aperture (141) in a semiconductor layer (110) comprising cadmium, a step of diffusing cadmium in a second location (142) of the aperture (141) and a cadmium sensitive etching step for promoting etching of one from the second location (142) which is rich in cadmium and the rest of a surface (110B) of the semiconductor layer (110). The invention also relates to a first support (100).

Abstract: A photodetection device includes a pixel matrix in which each pixel includes a barrier photodetector. The pixel matrix includes an absorption layer, a barrier layer, a contact layer, and at least one separation element to delimit the pixels. At least one separation element extends above the contact layer, and forms at least one depletion zone that extends locally in the contact layer, to block the lateral circulation of charge carriers.

Abstract: The invention relates to a method for manufacturing a first support (100) for forming, in particular with a functionalised second support (200), an optoelectronic component (1), the first support (100) comprising a semiconductor layer (110) and an alignment mark (140) provided on said semiconductor layer (110). The manufacturing method includes in particular a step of forming an aperture (141) in a semiconductor layer (110) comprising cadmium, a step of diffusing cadmium in a second location (142) of the aperture (141) and a cadmium sensitive etching step for promoting etching of one from the second location (142) which is rich in cadmium and the rest of a surface (110B) of the semiconductor layer (110). The invention also relates to a first support (100).

Abstract: The invention relates to a photodiode type structure (comprising: a support (100) including at least one semiconductor layer, the semiconductor layer (120) including of a first semiconductor zone (10) of a first type of conductivity and a mesa (130) in contact with the semiconductor layer (120). The mesa (130) includes of a second semiconductor zone (20), known as absorption zone, said second semiconductor zone (20) being of a second type of conductivity. The second semiconductor zone has a concentration of majority carriers such that the second semiconductor zone (30) is depleted in the absence of polarization of the structure (1). The structure (1) further comprises a third semiconductor zone (30) of the second type of conductivity made of a third material transparent in the absorbed wavelength range. The third semiconductor zone (30) is interposed between the first and the second semiconductor zones (10, 20) while being at least partially arranged in the semiconductor layer (120).

Abstract: A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.

Abstract: The invention relates to a photo bode type structure (comprising: a support (100) including at least one semiconductor layer, the semiconductor layer (120) including of a first semiconductor zone (10) of a first type of conductivity and a mesa (130) in contact with the semiconductor layer (120). The mesa (130) includes of a second semiconductor zone (20), known as absorption zone, said second semiconductor zone (20) being of a second type of conductivity. The second semiconductor zone has a concentration of majority carriers such that the second semiconductor zone (30) is depleted in the absence of polarization of the structure (1). The structure (1) further comprises a third semiconductor zone (30) of the second type of conductivity made of a third material transparent in the absorbed wavelength range. The third semiconductor zone (30) is interposed between the first and the second semiconductor zones (10, 20) while being at least partially arranged in the semiconductor layer (120).

Abstract: A semi-conducting component including a semi-conducting layer of a first conductivity type including a plurality of semi-conducting zones of a second conductivity type opposite that of the semi-conducting layer, and an insulating layer. The component further includes a first bias mechanism configured to bias the semi-conducting layer and a second bias mechanism configured to bias a semi-conducting zone. The first bias mechanism includes a conducting layer in contact with the insulating layer and which includes passageways for each second bias mechanism with the spacing between the conducting layer and the second bias mechanism which is located facing the corresponding semi-conducting zone.

Abstract: A planar photodiode array including a useful layer made of CdxHg1-xTe. The useful layer includes at least two superimposed doped layers, each interface between two doped layers forming a single PN junction; the useful layer has at least one separation region, extending from the upper face of the useful layer, and separating at least two useful volumes while going through the PN junction; and beyond a predetermined depth in the useful layer, the average cadmium concentration in the useful volumes is less than the average cadmium concentration in the separation region.

Abstract: A planar photodiode array including a useful layer made of CdxHg1-xTe. The useful layer includes at least two superimposed doped layers, each interface between two doped layers forming a single PN junction; the useful layer has at least one separation region, extending from the upper face of the useful layer, and separating at least two useful volumes while going through the PN junction; and beyond a predetermined depth in the useful layer, the average cadmium concentration in the useful volumes is less than the average cadmium concentration in the separation region.

Abstract: A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.

Abstract: A semi-conducting component including a semi-conducting layer of a first conductivity type including a plurality of semi-conducting zones of a second conductivity type opposite that of the semi-conducting layer, and an insulating layer. The component further includes a first bias mechanism configured to bias the semi-conducting layer and a second bias mechanism configured to bias a semi-conducting zone. The first bias mechanism includes a conducting layer in contact with the insulating layer and which includes passageways for each second bias mechanism with the spacing between the conducting layer and the second bias mechanism which is located facing the corresponding semi-conducting zone.

Abstract: The invention is a process and device for storing to and then releasing a cylindrical object from a vehicle.The system according to the invention consists of a cylindrical container 1 inside which a cylindrical object 2 is placed. Container 1 has a fixed rear cap 6, an inflatable bladder 11, a disc 12 interposed between the inflatable bladder 11 and the object to be released 2, a compartment for the object to be released 2 and an ejectable cap 7 containing a locking device 8 which can be unlocked by the impact of a firing pin 9.One application of the instant invention is the release at sea, of buoys, markers, containers offering assistance to the shipwrecked or any other similar cylindrical object.