Abstract: In one example, a method for depositing a film on a substrate comprises arranging a substrate on a substrate support in a processing chamber and setting a processing pressure, temperature and pressure in the chamber. The method includes striking a plasma and depositing and annealing the film on the substrate at a thickness in a predetermined film thickness range.

Abstract: Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.

Abstract: Executing an operation associated with a region proximate a graphic element on a surface. A user interaction with a region proximate a graphic element on a surface is detected, where the surface comprises a plurality of regions proximate the graphic element. Responsive to the user interaction, an operation associated with the region is executed.