Abstract: A process for producing a predetermined doping level in side walls and bases of trenches which have been etched into semiconductor substrates which involves treating the substrate with a gaseous atmosphere containing organic compounds of silicon, oxygen and boron in amounts sufficient to form a boron silicate glass, thermally decomposing the organic compounds to form the boron silicate glass as a layer deposit along the side walls and the bases and thereafter diffusing the layer deposit into the side walls and the base. This is followed by removing the layer deposit remaining after the predetermined amount of diffusion has taken place.

Abstract: A method for producing a multichannel plate containing metal dynodes and having a plurality of generally parallel channels for use in structures for amplifying or converting optical images or other two-dimensional signal patterns by secondary electron multiplication, which method includes:producing a negative mold of the plate by:(i) providing a body having at least the thickness of the plate to be produced and made of an electrically insulating material whose ability to be removed from the body is altered by exposure to a selected radiation;(ii) irradiating the body with the selected radiation in a pattern corresponding to the plate to be produced and in a manner to render portions of the body having the form of a grid surrounding the channels more easily removable than the remaining portions of the body; and(iii) removing the more easily removable portions of the body to leave columnar structures corresponding to the channels in the plate;depositing metal layers and intermediate layers alternatingly in the