Abstract: Real-time busyness information is for a public place is computed in a privacy-sensitive way, and provided for display in relation to historical busyness information. An aggregate amount of real-time location information available for a particular public place is measured (410), and used to determine (420) whether the public place is privacy-qualified. If the public place is privacy-qualified, real-time busyness information is computed (440) for the public place based on the real-time location information. Further, it is determined (450) whether the computed real-time busyness information is accuracy-qualified, based on a comparison of the real-time busyness information to historical busyness information. If both qualifications are met, the real-time busyness information is output (470) for display or to another application.

Abstract: A system is provided for logging digital messages and forwarding them outside a proprietary telecommunications network. The system includes a service logic program (“SLP”) which determines whether the message is to be forwarded outside the proprietary system. If the message is to be forwarded outside the system, the SLP sends it to the main relay, which logs the message to a log file, and forwards it to a discriminator. The discriminator forwards the message to a sub-relay, which is connected to a vendor application. The sub-relay forwards the message outside the proprietary telecommunications system, to the vendor application.

Abstract: A process for fabricating self-aligned regions of metal silicide on bipolar integrated circuits having self-aligned polycrystalline silicon emitters and base contacts includes the steps of depositing a layer of polycrystalline silicon across the surface of the structure, patterning the polycrystalline silicon to define the emitters and base contacts as well as resistors and diodes, heating the structure to transfer desired conductivity dopants from the polycrystalline silicon into the underlying structure, forming a protective layer over those regions of the structure where metal silicide is not desired, depositing a layer of refractory metal across the entire structure, and reacting the refractory metal with the underlying silicon to form metal silicide.