Abstract: Components for semiconductor diffusion furnaces are constructed of a high purity impervious silicon carbide or silicon nitride matrix deposited on a pre-shaped fibrous matrix of silicon carbide, carbon, or carbon coated silicon carbide. The high purity of the matrix prevents undesired gaseous components from contaminating the atmosphere of the furnace, and the fibrous re-enforcement provides strength combined with light weight.

Abstract: Disclosed is a method of forming dense protective coatings of co-deposited aluminum oxide and titanium oxide on wear surfaces. The coating is formed by simultaneously reacting an aluminum halide gas and a titanium halide gas with water vapor on a surface maintained at a temperature of about 900.degree. to about 1250.degree. C. Reaction conditions are maintained to assure mixing of the titanium halide gas with the other reactants only in the reaction zone and compositions of the reactant gases are limited to produce a coating comprising alpha alumina (Al.sub.2 O.sub.3) with about 2% to about 10% hexagonal alpha titanium oxide (Ti.sub.2 O.sub.3) dispersed in the alumina matrix.

Abstract: Disclosed is a method of forming dense protective coatings of co-deposited aluminum oxide and titanium oxide on wear surfaces. The coating is formed by simultaneously reacting an aluminum halide gas and a titanium halide gas with water vapor on a surface maintained at a temperature of about 900.degree. C to about 1250.degree. C. Reaction conditions are maintained to assure mixing of the titanium halide gas with the other reactants only in the reaction zone and compositions of the reactant gases are limited to produce a coating comprising alpha alumina (Al.sub.2 O.sub.3) with about 2% to about 10% hexagonal alpha titanium oxide (Ti.sub.2 O.sub.3) dispersed in the alumina matrix.