Abstract: A support sleeve for supporting a high temperature process tube comprises one or more circumferential channels, each channel connected to either a feed for gas or a vacuum exhaust. One circumferential channel opens to the top surface of the sleeve, on which the process tube is supported to provide a gas/vacuum seal between the process tube and support sleeve. Another circumferential channel is connected to a gas feed and provided with gas injection holes, evenly distributed along the support sleeve perimeter to provide a cylindrically symmetrical injection of process gas into the process tube. Another circumferential channel is connected to an exhaust for gas and provided with gas exhaust holes, evenly distributed along the circumference of the support sleeve, to provide a cylindrically symmetric exhaust of process gases from the process tube.

Abstract: A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the “device side” of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.

Abstract: Enhanced inserts are formed having a cylindrical grip and a protrusion extending from the grip. An ultra hard material layer is bonded on top of the protrusion. The inserts are mounted on a rock bit and contact the earth formations off center. The ultra hard material layer is thickest at a critical zone which encompasses a major portion of the region of contact between the insert and the earth formation. Transition layers may also be formed between the ultra hard material layer and the protrusion so as to reduce stresses formed on the interface between the ultra hard material and the protrusion.

Abstract: A method is provided for pre-treating reactor parts, comprising quartz or silicon, in use in chemical vapor deposition reactors. Applying the pre-treatment prior to deposition increases the cumulative deposited film thickness that can be received by the reactor parts before contamination of wafers processed in said reactors exceeds acceptable limits. The pre-treatment comprises nitridation of the surface of the reactor part, such as by heating the reactor part to a temperature of at least 800° C. and exposing the reactor part to a nitrogen-containing gas.

Abstract: A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the “device side” of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.

Abstract: A method is provided for pre-treating reactor parts, comprising quartz or silicon, in use in chemical vapor deposition reactors. Applying the pre-treatment prior to deposition increases the cumulative deposited film thickness that can be received by the reactor parts before contamination of wafers processed in said reactors exceeds acceptable limits. The pre-treatment comprises nitridation of the surface of the reactor part, such as by heating the reactor part to a temperature of at least 800° C. and exposing the reactor part to a nitrogen-containing gas.

Abstract: A furnace includes a core tube that has an elongate boundary wall and is configured to accommodate wafers for processing the wafers in a treatment atmosphere. The furnace includes a cooling chamber defined between the elongate boundary wall and an outer casing of the furnace, wherein the outer casing includes a heating element and has first lateral, circumferentially spaced openings in proximity of a first end of the outer casing and second lateral, circumferentially spaced openings in proximity of a second end of the outer casing. Cooling gas is supplied through one of the first and second lateral, circumferentially spaced openings to a region of one end of the cooling chamber and provides for a cooling atmosphere. The cooling gas is guided along the cooling chamber with a uniform distribution of flow and discharged through one of the first and second lateral, circumferentially spaced openings from a region of an opposite end of the cooling chamber.

Abstract: Method for the chemical treatment of a semiconductor substrate at a raised temperature, such as oxidization. To achieve a uniform treatment of comparatively large wafers in the radial direction, as well as to realize a uniform treatment during the simultaneous treatment of a number of semiconductor substrates placed one after each other, it is proposed, starting with an inert atmosphere, to gradually add oxygen and at the end of the treatment to gradually reduce the oxygen portion.

Abstract: A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the “device side” of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.

Abstract: A vertical furnace for processing wavers positioned on a support structure. The furnace comprises an inner sleeve, heating means and an outer sleeve. To support the inner sleeve on the support structure a support sleeve is provided engaging with its top and lower part of the inner sleeve and resting with its lower end on the support structure.