Abstract: A method of improving surface morphology of a semiconductor substrate when using an SOI technique comprises providing a silicon ingot positioned on a support member, orientating the silicon ingot in relation to the support member, and a cutting device, and cutting the silicon ingot along about a (100) crystal plane of the silicon ingot, preferably using a wire saw. This then provides a silicon substrate having an initial surface defining a miscut angle which is less than about 0.15 degrees from the (100) crystal plane. The method then comprises processing the silicon substrate using SIMOX processing, which includes implanting oxygen atoms in the silicon substrate to form a buried oxide layer and annealing the silicon substrate to provide a final substrate surface. Finally, the method includes accepting the final substrate surface for further processing when the final substrate surface measures between 2-20 Å RMS using an atomic force microscopy technique.

Abstract: The present invention contemplates a method and apparatus for selectively depositing metal or other materials upon a transparent substrate utilizing a laser source. More particularly, the invention contemplates depositing material in highly selective areas with a high degree of adhesion and uniformity.The invention attains these results with an arrangement wherein a laser source 12 is located on one side of a transparent or translucent substrate 18 upon which metal is to be deposited, so that the laser beam can be directed through the substrate. A reservoir 20 of metal is located on supports 24 on the opposite side of the substrate adjacent to the surface thereof. Deflection means 14, 16 are provided to selectively scan the laser beam at predetermined intensity levels over a desired pattern.The scanned laser beam acts to heat and vaporize metal from the metal reservoir, which is then redeposited upon the adjacent surface of the glass substrate.