Abstract: Disclosed are methods of advanced process control (APC) for particular processes. A particular process (e.g., a photolithography or etch process) is performed on a wafer to create a pattern of features. A parameter is measured on a target feature and the value of the parameter is used for APC. However, instead of performing APC based directly on the actual parameter value, APC is performed based on an adjusted parameter value. Specifically, an offset amount (which is previously determined based on an average of a distribution of parameter values across all of the features) is applied to the actual parameter value to acquire an adjusted parameter value, which better represents the majority of features in the pattern. Performing this APC method minimizes dimension variations from pattern to pattern each time the same pattern is generated on another region of the same wafer or on a different wafer using the particular process.

Abstract: Disclosed are methods of advanced process control (APC) for particular processes. A particular process (e.g., a photolithography or etch process) is performed on a wafer to create a pattern of features. A parameter is measured on a target feature and the value of the parameter is used for APC. However, instead of performing APC based directly on the actual parameter value, APC is performed based on an adjusted parameter value. Specifically, an offset amount (which is previously determined based on an average of a distribution of parameter values across all of the features) is applied to the actual parameter value to acquire an adjusted parameter value, which better represents the majority of features in the pattern. Performing this APC method minimizes dimension variations from pattern to pattern each time the same pattern is generated on another region of the same wafer or on a different wafer using the particular process.

Abstract: Methods for forming RX pads having gate alignment marks configured to enable noise reduction between layers while resulting in little or no non-uniformity of CMP processes for the IC, and the resulting devices, are disclosed. Embodiments include: providing, on a substrate, a RX pad having a SPM with a SPM horizontal and vertical positions at horizontal and vertical midpoints, respectively, of the first RX pad; providing a second RX pad abutting the first RX pad and a first STI pad abutting the second RX pad, each having a vertical midpoint at the SPM vertical position; forming a first gate alignment mark on the second RX pad and having vertical endpoints horizontally aligned with vertical endpoints of the second RX pad; and forming a second gate alignment mark on the first STI pad and having vertical endpoints horizontally aligned with vertical endpoints of the first STI pad.

Abstract: Methods for forming RX pads having gate alignment marks configured to enable noise reduction between layers while resulting in little or no non-uniformity of CMP processes for the IC, and the resulting devices, are disclosed. Embodiments include: providing, on a substrate, a RX pad having a SPM with a SPM horizontal and vertical positions at horizontal and vertical midpoints, respectively, of the first RX pad; providing a second RX pad abutting the first RX pad and a first STI pad abutting the second RX pad, each having a vertical midpoint at the SPM vertical position; forming a first gate alignment mark on the second RX pad and having vertical endpoints horizontally aligned with vertical endpoints of the second RX pad; and forming a second gate alignment mark on the first STI pad and having vertical endpoints horizontally aligned with vertical endpoints of the first STI pad.

Abstract: This invention relates to a silane-resin composition that can be obtained by at least partial hydrolytic condensation of at least the following components: (1) one or more sulfonic acid group-containing silane(s) with at least one group that can be cleaved under hydrolytic conditions, (2) one or more styryl-functionalized silane(s) and (3) one or more silane(s) that carry a nitrogen-containing heterocyclic compound, an amine group or a sulfonamide group with at least one group that can be cleaved under hydrolytic conditions, and mixing of the components before, during or after the hydrolytic condensation, as well as a process for the production of this composition. With the silane resin that is obtained, proton-conductive, organically cross-linked heteropolysiloxanes can be produced that are suitable for PEMFC in a layer or membrane form as proton-conductive systems. Their proton conductivity can be further increased by the addition of suitable liquids.

Abstract: This invention relates to a silane-resin composition that can be obtained by at least partial hydrolytic condensation of at least the following components: (1) one or more sulfonic acid group-containing silane(s) with at least one group that can be cleaved under hydrolytic conditions, (2) one or more styryl-functionalized silane(s) and (3) one or more silane(s) that carry a nitrogen-containing heterocyclic compound, an amine group or a sulfonamide group with at least one group that can be cleaved under hydrolytic conditions, and mixing of the components before, during or after the hydrolytic condensation, as well as a process for the production of this composition. With the silane resin that is obtained, proton-conductive, organically cross-linked heteropolysiloxanes can be produced that are suitable for PEMFC in a layer or membrane form as proton-conductive systems. Their proton conductivity can be further increased by the addition of suitable liquids.

Abstract: The invention relates to a method for preparing silanes comprising styryl groups, said silanes being represented by the general formula (I): (St)bSiR?aR4?a?b with improved yields through a reaction with magnesium in a solvent mixture comprising from 30:70 to 70:30 (v/v) of diethyl ether and tetrahydrofuran.

Abstract: This invention relates to a silane-resin composition that can be obtained by at least partial hydrolytic condensation of at least the following components: (1) one or more sulfonic acid group-containing silane(s) with at least one group that can be cleaved under hydrolytic conditions, (2) one or more styryl-functionalized silane(s) and (3) one or more silane(s) that carry a nitrogen-containing heterocyclic compound, an amine group or a sulfonamide group with at least one group that can be cleaved under hydrolytic conditions, and mixing of the components before, during or after the hydrolytic condensation, as well as a process for the production of this composition. With the silane resin that is obtained, proton-conductive, organically cross-linked heteropolysiloxanes can be produced that are suitable for PEMFC in a layer or membrane form as proton-conductive systems. Their proton conductivity can be further increased by the addition of suitable liquids.

Abstract: This invention relates to a silane-resin composition that can be obtained by at least partial hydrolytic condensation of at least the following components: (1) one or more sulfonic acid group-containing silane(s) with at least one group that can be cleaved under hydrolytic conditions, (2) one or more styryl-functionalized silane(s) and (3) one or more silane(s) that carry a nitrogen-containing heterocyclic compound, an amine group or a sulfonamide group with at least one group that can be cleaved under hydrolytic conditions, and mixing of the components before, during or after the hydrolytic condensation, as well as a process for the production of this composition. With the silane resin that is obtained, proton-conductive, organically cross-linked heteropolysiloxanes can be produced that are suitable for PEMFC in a layer or membrane form as proton-conductive systems. Their proton conductivity can be further increased by the addition of suitable liquids.

Abstract: The invention relates to a method for preparing silanes comprising styryl groups, said silanes being represented by the general formula (I):