Patents by Inventor Frank Muemmler

Frank Muemmler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Layered semiconductor substrate with reduced bow having a group III nitride layer and method for manufacturing it
    Patent number: 10192739
    Abstract: A layered semiconductor substrate has a monocrystalline first layer based on silicon, having a first thickness and a first lattice constant a1 determined by a first dopant element and a first dopant concentration, and in direct contact therewith, a monocrystalline second layer based on silicon, having a second thickness and a second lattice constant a2, determined by a second dopant element and a second dopant concentration, and a monocrystalline third layer comprising a group III nitride, the second layer located between the first layer and the third layer, wherein a2>a1, wherein the crystal lattice of the first layer and the second layer are lattice-matched, and wherein the bow of the layered semiconductor substrate is in the range from ?50 ?m to 50 ?m.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: January 29, 2019
    Assignee: SILTRONIC AG
    Inventors: Peter Storck, Guenter Sachs, Ute Rothammer, Sarad Bahadur Thapa, Helmut Schwenk, Peter Dreier, Frank Muemmler, Rudolf Mayrhuber
  • Method of supporting a growing single crystal during crystallization of the single crystal according to the FZ method
    Patent number: 10094042
    Abstract: A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: October 9, 2018
    Assignee: SILTRONIC AG
    Inventors: Kurt Niederer, Helmut Teroerde, Josef Berger, Goetz Meisterernst, Frank Muemmler, Simon Zitzelsberger
  • Method for growing a single crystal by crystallizing the single crystal from a float zone
    Patent number: 9932691
    Abstract: A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.
    Type: Grant
    Filed: November 19, 2015
    Date of Patent: April 3, 2018
    Assignee: SILTRONIC AG
    Inventors: Georg Raming, Ludwig Altmannshofer, Gundars Ratnieks, Martin Moeller, Frank Muemmler
  • Method For Growing A Single Crystal By Crystallizing The Single Crystal From A Float Zone
    Publication number: 20160177469
    Abstract: A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms.
    Type: Application
    Filed: November 19, 2015
    Publication date: June 23, 2016
    Inventors: Georg RAMING, Ludwig ALTMANNSHOFER, Gundars RATNIEKS, Martin MOELLER, Frank MUEMMLER
  • Method Of Supporting A Growing Single Crystal During Crystallization Of The Single Crystal According To The FZ Method
    Publication number: 20160060786
    Abstract: A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal.
    Type: Application
    Filed: July 30, 2015
    Publication date: March 3, 2016
    Inventors: Kurt Niederer, Helmut Teroerde, Josef Berger, Goetz Meisterernst, Frank Muemmler, Simon Zitzelsberger
  • LAYERED SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING IT
    Publication number: 20140048848
    Abstract: A layered semiconductor substrate has a monocrystalline first layer based on silicon, having a first thickness and a first lattice constant a1 determined by a first dopant element and a first dopant concentration, and in direct contact therewith, a monocrystalline second layer based on silicon, having a second thickness and a second lattice constant a2, determined by a second dopant element and a second dopant concentration, and a monocrystalline third layer comprising a group III nitride, the second layer located between the first layer and the third layer, wherein a2>a1, wherein the crystal lattice of the first layer and the second layer are lattice-matched, and wherein the bow of the layered semiconductor substrate is in the range from ?50 ?m to 50 ?m.
    Type: Application
    Filed: May 23, 2012
    Publication date: February 20, 2014
    Applicant: SILTRONIC AG
    Inventors: Peter Storck, Guenter Sachs, Ute Rothammer, Sarad Bahadur Thapa, Helmut Schwenk, Peter Dreier, Frank Muemmler, Rudolf Mayrhuber