Abstract: The present invention is directed toward, a data sink/data source data transmission device and data terminal device for a circuit-switched and packet-switched network, the ability to eliminate the logical separation between applications, which are based on the circuit-switched network (e.g., PSTN, ISDN), and applications, which are based on the packet-switched network, (e.g., Internet). To this end, a data transmission device for transmitting and receiving data into/from the circuit-switched network includes controllable switchover parts. This data transmission device is or can be assigned to a universally useable unit for automatically processing data and for transmitting and receiving data to/from the packet-switched network and is assigned or can be assigned to the at least one data terminal device for transmitting and receiving data into/from the circuit-switched network.

Abstract: The present invention is directed toward, a data sink/data source data transmission device and data terminal device for a circuit-switched and packet-switched network, the ability to eliminate the logical separation between applications, which are based on the circuit-switched network (e.g., PSTN, ISDN), and applications, which are based on the packet-switched network, (e.g., Internet). To this end, a data transmission device for transmitting and receiving data into/from the circuit-switched network includes controllable switchover parts. This data transmission device is or can be assigned to a universally useable unit for automatically processing data and for transmitting and receiving data to/from the packet-switched network and is assigned or can be assigned to the at least one data terminal device for transmitting and receiving data into/from the circuit-switched network.

Abstract: In a method for manufacturing a semiconductor component having a semiconductor substrate, a flat, porous diaphragm layer and a cavity underneath the porous diaphragm layer are produced to form unsupported structures for a component. In a first approach, the semiconductor substrate may receive a doping in the diaphragm region that is different from that of the cavity. This permits different pore sizes and/or porosities to be produced, which is used in producing the cavity for improved etching gas transport. Also, mesopores may be produced in the diaphragm region and nanopores may be produced as an auxiliary structure in what is to become the cavity region.

Abstract: A method for producing a micromechanical diaphragm sensor includes providing a semiconductor substrate having a first region, a diaphragm, and a cavity that is located at least partially below the diaphragm. Above at least one part of the first region, a second region is generated in or on the surface of the semiconductor substrate, with at least one part of the second region being provided as crosspieces. The diaphragm is formed by a deposited sealing layer, and includes at least a part of the crosspieces.

Abstract: The present invention relates to a process for the synthesis of (S)-2?[2-1-(methyl-2-piperidyl) ethyl] cinnamanilide (I) or salts or pharmaceutically acceptable prodrugs thereof:

Abstract: Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions.

Abstract: A method for producing a micromechanical diaphragm sensor includes providing a semiconductor substrate having a first region, a diaphragm, and a cavity that is located at least partially below the diaphragm. Above at least one part of the first region, a second region is generated in or on the surface of the semiconductor substrate, with at least one part of the second region being provided as crosspieces. The diaphragm is formed by a deposited sealing layer, and includes at least a part of the crosspieces.

Abstract: Thermoplastics comprising plasticizer (i), wherein the plasticizer (i) is an ester based on polytetrahydrofuran and on a monocarboxylic acid.

Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

Abstract: A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

Abstract: A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

Abstract: A method is proposed which will enable cavities having optically transparent walls to be produced simply and cost-effectively in a component by using standard methods of microsystems technology. For this purpose, a silicon region is first produced, which is surrounded on all sides by at least one optically transparent cladding layer. At least one opening is then produced in the cladding layer. Over this opening, the silicon surrounded by the cladding layer is dissolved out, forming a cavity within the cladding layer. In this context, the cladding layer acts as an etch barrier layer.

Abstract: The present invention relates to salts of aryl compounds as discussed below and to methods of manufacture thereof, as well as other subject matter. More particularly, the invention relates to salts useful as intermediates for the synthesis of the cinnamanilide of formula (Y): where Ra is selected from H, OH, C1, C2, C3 or C4 alkyl; and R1 is C1, C2, C3 or C4 alkyl.

Abstract: This invention relates to tablets especially tablets formed by direct compression of a dipeptidylpeptidase IV (DPP-IV) inhibitor compound, a process for the preparation thereof; to new pharmaceutical formulations, and new tableting powders comprising DPP-IV inhibitor formulations capable of being directly compressed into tablets. The invention relates further to a process for preparing the tablets by blending the active ingredient and specific excipients into the new formulations and then directly compressing the formulations into the direct compression tablets. The invention also relates to vildagliptin particle size distribution and a new crystal form of vildagliptin particularly adapted for the preparation of improved tablets and other pharmaceutical compositions.

Abstract: A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer.

Abstract: A simple and cost-effective possibility is proposed for producing optically transparent regions (5, 6) in a silicon substrate (1), by the use of which both optically transparent regions of any thickness and optically transparent regions over a cavity in a silicon substrate are able to be implemented. For this purpose, first at least a specified region (5, 6) of the silicon substrate (1) is etched porous. Thereafter, the specified porous region (5, 6) of the silicon substrate (1) is oxidized.

Abstract: A micromechanical component and a method for producing a micromechanical component are proposed, a hollow space and a region of porous silicon being provided, the region of porous silicon being provided for lowering the pressure prevailing in the hollow space.

Abstract: The present invention relates to a process for the preparation of a N-(N?-substituted glycyl)-2-cyanopyrrolidine comprising at least (a) reacting, in the presence of dimethylformamide, a compound of formula (V) ?wherein, independently of each other, X1 and X3 are halogen; X2 is halogen, OH, O—C(?O)—CH2X3, —O—SO2—(C1-8)alkyl or 13 O—SO2-(aryl), ?with L-prolinamide, followed by (b) reacting the resultant compound without isolation with a dehydration agent, optionally followed by (c) reacting, in the presence of a base, the resultant compound without isolation with an appropriate amine and (d) recovering the resultant compound in free form or in acid addition salt form.

Abstract: A micromechanical sensor element and a method for the production of a micromechanical sensor element that is suitable, for example in a micromechanical component, for detecting a physical quantity. Provision is made for the sensor element to include a substrate, an access hole and a buried cavity, at least one of the access holes and the cavity being produced in the substrate by a trench etching and/or, in particular, an isotropic etching process. The trench etching process includes different trenching (trench etching) steps which may be divided into a first phase and a second phase. Thus, in the first phase, at least one first trenching step is carried out in which, in a predeterminable first time period, material is etched out of the substrate and a depression is produced. In that trenching step, a typical concavity is produced in the wall of the depression.

Abstract: A pressure sensor having a pressure sensor element, the pressure sensor element having a diaphragm area and a first fixing area, the pressure to be measured exerting a force action on the diaphragm area, the first fixing area being connected to a second fixing area of a fixing element to fix the pressure sensor element, and the first fixing area and the second fixing area being pressure-loaded by the force action.