Patents by Inventor Frank Trang

Frank Trang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190044483
    Abstract: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.
    Type: Application
    Filed: August 2, 2017
    Publication date: February 7, 2019
    Inventors: Bayaner Arigong, Richard Wilson, Haedong Jang, Frank Trang, Timothy Canning, Rongguo Zhou, Bjoern Herrmann
  • Patent number: 10181833
    Abstract: A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.
    Type: Grant
    Filed: March 16, 2017
    Date of Patent: January 15, 2019
    Assignee: Infineon Technologies AG
    Inventors: Bayaner Arigong, Richard Wilson, Haedong Jang, Frank Trang, Timothy Canning, Rongguo Zhou
  • Publication number: 20180269845
    Abstract: A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.
    Type: Application
    Filed: March 16, 2017
    Publication date: September 20, 2018
    Inventors: Bayaner Arigong, Richard Wilson, Haedong Jang, Frank Trang, Timothy Canning, Rongguo Zhou
  • Patent number: 9899976
    Abstract: A power amplifier includes an outphasing amplifier. The outphasing amplifier includes a first amplifier and a second amplifier, and is configured to provide a first amplified RF signal and a second amplified RF signal that is phase shifted from the first amplified RF signal. The power amplifier further includes an output circuit that is configured to combine RF power of the first and second amplified RF signals at a summing node. The output circuit includes a first branch connected between the first amplifier and a summing node and a second branch connected between the second amplifier and the summing node. The first and second branches are each configured to match an output impedance of the first and second amplifiers and to phase shift the first and second amplified RF signals for an outphasing operation using common reactive components for the match of the output impedance and the outphasing operation.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: February 20, 2018
    Assignee: Infineon Technologies Americas Corp.
    Inventors: Haedong Jang, Richard Wilson, Timothy Canning, David Seebacher, Bayaner Arigong, Frank Trang
  • Publication number: 20170366148
    Abstract: A power amplifier includes an outphasing amplifier. The outphasing amplifier includes a first amplifier and a second amplifier, and is configured to provide a first amplified RF signal and a second amplified RF signal that is phase shifted from the first amplified RF signal. The power amplifier further includes an output circuit that is configured to combine RF power of the first and second amplified RF signals at a summing node. The output circuit includes a first branch connected between the first amplifier and a summing node and a second branch connected between the second amplifier and the summing node. The first and second branches are each configured to match an output impedance of the first and second amplifiers and to phase shift the first and second amplified RF signals for an outphasing operation using common reactive components for the match of the output impedance and the outphasing operation.
    Type: Application
    Filed: June 17, 2016
    Publication date: December 21, 2017
    Inventors: Haedong Jang, Richard Wilson, Timothy Canning, David Seebacher, Bayaner Arigong, Frank Trang